Abstract: RFID system components, such as readers and tags, communicate by a reader transmitting waveforms that encode a calibration symbol and a divide ratio. Tags include a processor to determine a backscatter link period result by dividing a count value representing the calibration symbol by the divide ratio and adding an adjustment. Tags modulate a backscatter waveform that includes symbols using a link period determined from the result.

Abstract: RFID system components, such as readers and tags, communicate by a reader transmitting waveforms that encode a calibration symbol and a divide ratio. Tags include a processor to determine a backscatter link period result by dividing a count value representing the calibration symbol by the divide ratio and adding an adjustment. Tags modulate a backscatter waveform that includes symbols using a link period determined from the result.

Abstract: Methods and apparatus provide secure two-way (reader-to-tag and tag-to-reader) RFID communications. According to one aspect, a tag receives a noise-encrypted RF carrier signal from a reader and backscatter modulates it with tag information. Eavesdroppers cannot extract the tag information from the backscattered signal because it is masked by the noise encryption.

Abstract: RFID tags are commanded to generate a pilot tone in their backscatter. When the backscattered pilot tone is received in the reader, the pilot tone is used to estimate the tag period/frequency. Then, the estimate is used to seed and lock a symbol timing recovery loop, which provides a detected signal to one or more correlators for detecting the tag preamble. A delayed version of the received tag signal is compared against a baseline signal threshold established from the received signal to detect the pilot tone.

Abstract: Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be “unstuck” or “removed” and thus be made usable (i.e., able to be programmed) again.

Abstract: Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be “unstuck” or “removed” and thus be made usable (i.e., able to be programmed) again.

Abstract: Methods and apparatuses for programming a single-poly pFET-based nonvolatile memory cell bias the cell so that band-to-band tunneling (BTBT) is induced and electrons generated by the BTBT are injected onto a floating gate of the cell. Following a predetermined event, the single-poly pFET is biased to induce impact-ionized hot-electron injection (IHEI). The predetermined event may be, for example, the expiration of a predetermined time period or a determination that a channel has been formed by the BTBT injection process that is sufficiently conducting to support IHEI. Employing BTBT permits a previously overerased or stuck bit to be “unstuck” or “removed” and thus be made usable (i.e., able to be programmed) again.

Abstract: A method of calibrating an oscillator within a Radio-Frequency Identification (RFID) tag includes storing a plurality of calibration values within a memory structure. Each of the calibration values corresponds to a respective oscillation frequency of the oscillator. A selected calibration value is selected from the plurality of calibration values stored, according to a first selection criterion. The oscillator is then calibrated in accordance with the selected calibration value.

Abstract: Systems, software, devices, and methods are described for an RFID reader system to communicate with RFID tags. RF energy encountered in conjunction with using a selected channel is detected and used to adjust a waveform shaping parameter. RF waves can be transmitted from the reader to the RFID tags and RF waves can be backscattered from the RFID tags. At least some of the RF waves transmitted to or backscattered from the RFID tags have a waveform with a shape according to the adjusted waveform shaping parameter.

Abstract: Systems, software, devices, and methods are described for an RFID reader system to communicate with RFID tags. RF energy encountered in conjunction with using a selected channel is detected and used to adjust a waveform shaping parameter in combination with a performance requirement. RF waves can be transmitted from the reader to the RFID tags and RF waves can be backscattered from the RFID tags. At least some of the RF waves transmitted to or backscattered from the RFID tags have a waveform with a shape according to the adjusted waveform shaping parameter.

Abstract: Systems, software, devices, and methods are described for an RFID reader system to communicate with RFID tags. RF energy detected in conjunction with using a selected channel is detected and used to adjust a waveform shaping parameter. The waveform shaping parameter can be additionally stored, and then reconstructed for later use in the same channel. Reconstruction can optionally be also from derived channel performance data. RF waves can be transmitted from the reader to the RFID tags and RF waves can be backscattered from the RFID tags. At least some of the RF waves transmitted to or backscattered from the RFID tags have a waveform with a shape according to the reconstructed waveform shaping parameter.

Abstract: Systems, software, devices, and methods are described for an RFID reader system to communicate with RFID tags. RF energy encountered in conjunction with using a selected channel is detected. The RF energy can be a signal from another RFID reader. The detected signal is used to adjust a waveform shaping parameter. RF waves can be transmitted from the reader to the RFID tags and RF waves can be backscattered from the RFID tags. At least some of the RF waves transmitted to or backscattered from the RFID tags have a waveform with a shape according to the adjusted waveform shaping parameter.

Abstract: Systems, software, devices, and methods are described for an RFID reader system to communicate with RFID tags. RF energy encountered in conjunction with using a selected channel is detected. The RF energy can be a signal from an RFID tag. The detected signal is used to adjust a waveform shaping parameter. RF waves can be transmitted from the reader to the RFID tags and RF waves can be backscattered from the RFID tags. At least some of the RF waves transmitted to or backscattered from the RFID tags have a waveform with a shape according to the adjusted waveform shaping parameter.

Abstract: Retention-enhanced, programmable, shared floating gate logic circuits are employed as NVM cells. In one embodiment, the NVM cell is formed by a dual transistor logic gate circuit with a shared floating gate. The logic circuit is an inverter. The shared floating gate is doped partially or completely with p-type impurities to enhance retention. A charge adjustment circuit is arranged to inject and remove electrons to and from the shared floating gate determining the output of the logic gate circuit when supply voltage is applied to the logic gate circuit. In another embodiment, four transistors are employed to form another logic circuit such as a NOR gate or a NAND gate.

Abstract: A Schottky junction diode device having improved performance and a multiple well structure is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped differently, such as to a second conductivity type opposite that of the first conductivity type. A second well is disposed within the first well. A region of metal-containing material is disposed in the second well to form a Schottky junction at an interface between the region of metal-containing material and the second well. In one embodiment, a second well contact is disposed in a portion of the second well.

Abstract: A Schottky junction diode device having improved performance is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped to a second conductivity type opposite that of the first conductivity type. A region of metal-containing material is disposed over the first well to form a Schottky junction at an interface between the region of metal-containing material and the first well. In one embodiment, a first well contact is disposed in a portion of the first well. A second well is disposed over the substrate wherein the second well includes a material doped to the first conductivity type. In one embodiment, the first well and the second well are not in direct contact with one another.

Abstract: NVM arrays include rows and columns of NVM cells comprising a floating gate, a programming element, and a logic storage element. During a programming or erase mode, the floating gate of each cell is charged to a predetermined level. At the beginning of a read mode, all storage elements are pre-charged to a high supply voltage level. Following the pre-charge, selected cells are read to determine stored bit values. A charge status of the floating gate of each cell determines whether the storage element is turned on and the pre-charge voltage is pulled down corresponding to a bit value.

Abstract: Analog-valued floating-gate transistors are used as trimmable circuit components for modifying and/or controlling the gain, phase, offset, frequency response, current consumption, and/or transfer function of signal pathways in parallel and/or serial processing circuits in radio frequency, analog, or mixed-signal integrated circuits.

Abstract: RFID system components, such as readers and tags, communicate by a reader transmitting waveforms that encode a calibration symbol and a divide ratio. Tags include a processor to determine a backscatter link period result by dividing a count value representing the calibration symbol by the divide ratio and adding an adjustment. Tags modulate a backscatter waveform that includes symbols using a link period determined from the result.