Patents by Inventor Todd Jackson Plum

Todd Jackson Plum has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor Constructions
    Publication number: 20110018098
    Abstract: Some embodiments include methods of forming capacitors. A first section of a capacitor may be formed to include a first storage node, a first dielectric material, and a first plate material. A second section of the capacitor may be formed to include a second storage node, a second dielectric material, and a second plate material. The first and second sections may be formed over a memory array region, and the first and second plate materials may be electrically connected to first and second interconnects, respectively, that extend to over a region peripheral to the memory array region. The first and second interconnects may be electrically connected to one another to couple the first and second plate materials to one another. Some embodiments include capacitor structures, and some embodiments include methods of forming DRAM arrays.
    Type: Application
    Filed: October 6, 2010
    Publication date: January 27, 2011
    Applicant: Micron Technology, Inc.
    Inventor: Todd Jackson Plum
  • Methods of forming capacitors, and methods of forming DRAM arrays
    Patent number: 7829410
    Abstract: Some embodiments include methods of forming capacitors. A first section of a capacitor may be formed to include a first storage node, a first dielectric material, and a first plate material. A second section of the capacitor may be formed to include a second storage node, a second dielectric material, and a second plate material. The first and second sections may be formed over a memory array region, and the first and second plate materials may be electrically connected to first and second interconnects, respectively, that extend to over a region peripheral to the memory array region. The first and second interconnects may be electrically connected to one another to couple the first and second plate materials to one another. Some embodiments include capacitor structures, and some embodiments include methods of forming DRAM arrays.
    Type: Grant
    Filed: November 26, 2007
    Date of Patent: November 9, 2010
    Assignee: Micron Technology, Inc.
    Inventor: Todd Jackson Plum
  • Semiconductor Constructions, Methods of Forming Capacitors, And Methods of Forming DRAM Arrays
    Publication number: 20090134491
    Abstract: Some embodiments include methods of forming capacitors. A first section of a capacitor may be formed to include a first storage node, a first dielectric material, and a first plate material. A second section of the capacitor may be formed to include a second storage node, a second dielectric material, and a second plate material. The first and second sections may be formed over a memory array region, and the first and second plate materials may be electrically connected to first and second interconnects, respectively, that extend to over a region peripheral to the memory array region. The first and second interconnects may be electrically connected to one another to couple the first and second plate materials to one another. Some embodiments include capacitor structures, and some embodiments include methods of forming DRAM arrays.
    Type: Application
    Filed: November 26, 2007
    Publication date: May 28, 2009
    Inventor: Todd Jackson Plum