Patents by Inventor Todd Patrick Thibeault

Todd Patrick Thibeault has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • System and method for manufacturing an emitter structure in a complementary bipolar CMOS transistor manufacturing process
    Patent number: 7678657
    Abstract: A system and method are disclosed for manufacturing an emitter structure in a complementary bipolar complementary metal oxide semiconductor (CBiCMOS) transistor manufacturing process. A protective layer is formed over an emitter layer in a transistor structure and lateral portions of the protective layer and the emitter layer are etched to form an emitter structure. An oxide layer is then deposited over the transistor structure and an etchback process is performed to remove portions of the oxide layer from the top of the protective layer. A source/drain implant process is then performed to implant an extrinsic base region of the transistor. The protective layer protects the emitter structure from the implant process. Then the protective layer is removed from the emitter structure.
    Type: Grant
    Filed: November 2, 2006
    Date of Patent: March 16, 2010
    Assignee: National Semiconductor Corporation
    Inventors: Todd Patrick Thibeault, Steven J. Adler, Scott David Ruby
  • High Q inductor integration
    Patent number: 7247544
    Abstract: In an inductor integration process, a high Q inductor is achieved by forming an AlCu inductor via prior to depositing the inductor dielectric.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: July 24, 2007
    Assignee: National Semiconductor Corporation
    Inventors: Sergei Drizlikh, Todd Patrick Thibeault, Thomas Francis