Abstract: A calibration circuit includes an amplifier, a current steering digital-to-analog converter (DAC), a comparator, a slew calibration network, and an on-die termination (ODT) network. The amplifier generally has a first input, a second input, and an output. The first input generally receives a reference signal. The current steering digital-to-analog converter (DAC) generally has a first input coupled to the output of the amplifier, a first output coupled to the second input of the amplifier, and a second output coupled to a circuit node. The comparator generally has a first input receiving the reference signal, a second input coupled to the circuit node, and an output at which an output of the calibration circuit may be presented. The slew calibration network is generally coupled to the circuit node and configured to adjust a slew rate of the calibration circuit. The on-die termination (ODT) network is generally coupled to the circuit node.

Abstract: An input/output (I/O) cell including one or more driver-capable segments and one or more on-die termination (ODT) capable segments. The I/O cell may be configured as an output driver in a first mode and Thevenin equivalent termination in a second mode.

Abstract: A fault tolerant driver circuit includes a data output driver that receives an enable input and that includes a transistor formed on an isolation well. A well bias circuit provides a first well bias to the isolation well. The well bias circuit includes voltage-controlled impedances that are controlled by a voltage of the data output line, the enable input and a supply voltage. The voltage-controlled impedances connect the first well bias alternatively to: a common conductor through a first impedance when the supply voltage is ON and the enable input is ON; and a second impedance when the supply voltage is on and enable is OFF.

Abstract: An input/output (I/O) cell including one or more driver-capable segments and one or more on-die termination (ODT) capable segments. The I/O cell may be configured as an output driver in a first mode and Thevenin equivalent termination in a second mode.

Abstract: An input/output (I/O) cell including one or more driver-capable segments and one or more on-die termination (ODT) capable segments. The I/O cell may be configured as an output driver in a first mode and Thevenin equivalent termination in a second mode.

Abstract: An input/output (I/O) cell including one or more driver-capable segments and one or more on-die termination (ODT) capable segments. The I/O cell may be configured as an output driver in a first mode and Thevenin equivalent termination in a second mode.

Abstract: A fault tolerant driver circuit includes a data output driver that receives an enable input and that includes a transistor formed on an isolation well. A well bias circuit provides a first well bias to the isolation well. The well bias circuit includes voltage-controlled impedances that are controlled by a voltage of the data output line, the enable input and a supply voltage. The voltage-controlled impedances connect the first well bias alternatively to: a common conductor through a first impedance when the supply voltage is ON and the enable input is ON; and a second impedance when the supply voltage is on and enable is OFF.

Abstract: A method and apparatus are provided for protecting elements of a receiver from overvoltages in a pseudo-differential signal having a true signal and a reference voltage. The method and apparatus limit the true signal to a protection voltage, which is correlated to the reference voltage, to produce a protected true signal. The protected true signal and the reference voltage are applied to inputs of the receiver.

Abstract: A method and apparatus are provided for summing DC voltages, which employ at least one native transistor device to add a first DC input voltage to a second DC input voltage to produce a sum output.

Abstract: A receiver circuit is provided on an integrated circuit. The receiver circuit includes first and second power supply terminals, a ground supply terminal, a resistive element coupled between the first and second power supply terminals, and a receiver biased between the second power supply terminal and the ground supply terminal. The receiver draws a bias current through the resistive element, which varies as a positive function with a voltage on the second power supply terminal. The voltage on the second power supply terminal varies as an inverse function of the bias current.

Abstract: A process for forming a capacitive structure that includes an upper layer having a first capacitor electrode section therein. A capacitor dielectric layer is formed adjacent the upper layer. The capacitor dielectric layer covers the first capacitor electrode section. A second capacitor electrode layer is formed adjacent the capacitor dielectric layer. The second capacitor electrode layer includes a second capacitor electrode section that at least partially covers the first capacitor electrode section, and which has an edge portion that extends beyond the underlying first capacitor electrode section. The capacitor dielectric layer being disposed between the first capacitor electrode section and the second capacitor electrode section. An upper dielectric layer is formed adjacent the second capacitor electrode section.

Abstract: A level shifter circuit configured for use between a core of a chip and input/output transistor of the chip in order to shield low voltage devices residing on the core. The level shifter circuit includes voltage tolerant native devices which have VDDCORE on their gates, and each voltage tolerant native device is cascoded with a low voltage transistor on the core.

Abstract: A level shifter circuit configured for use between a core of a chip and input/output transistors of the chip in order to shield low voltage devices residing on the core. The level shifter circuit includes voltage tolerant native devices which have VDDCORE on their gates, and each voltage tolerant native device is cascoded with a low voltage transistor on the core.