Abstract: Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

Abstract: A laser alignment fixture for a reactor system may be used to align components of the reactor system to allow for a uniform deposition of a thin film onto a substrate. The laser alignment fixture may include: a lid assembly; and a plurality of laser and sensor assemblies. The laser alignment fixture may align at least: a flow control ring, a susceptor, and a side wall of the reactor system.

Abstract: Herein disclosed are systems and methods related to delivery systems using solid source chemical fill vessels. The delivery system can include a vapor deposition reactor, two or more fill vessels, of which one of more can be remote from the vapor deposition reactor. Each fill vessel is configured to hold solid source chemical reactant therein. An interconnect line or conduit can fluidly connect the vapor deposition reactor with one or more of the fill vessels. A line heater can heat at least a portion of the interconnect line to at least a minimum line temperature.

Abstract: A lift pin assembly includes a holder to engage and secure the lift pin and a bellow to actuate the lift pin and the holder linearly and vertically. The holder includes three pieces that connect together to secure the lift pin within the holder. The holder includes a first piece having a recessed area, a second piece that nests within the recessed area, and a third piece adjacent the first and second pieces. The second piece contains a threaded hole to receive and secure the lift pin and the third piece contains a through-hole that aligns with the threaded hole of the second piece.

Abstract: A chemical vessel is disclosed comprising a dip tube and a level sensor tube arranged in an elongated counterbore incorporated into a housing of the chemical vessel. The chemical vessel may be configured to allow a pushback routine to take place, whereby a level of liquid in the chemical vessel is reduced to a point that the dip tube is free from liquid inside the dip tube or at the bottom of the dip tube. Once the dip tube is free of the liquid, then a vacuum source may be used to purge vapor within the chemical vessel without the risk of damage to the vacuum source.

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

Abstract: A chemical vessel is disclosed comprising a dip tube and a level sensor tube arranged in an elongated counterbore incorporated into a housing of the chemical vessel. The chemical vessel may be configured to allow a pushback routine to take place, whereby a level of liquid in the chemical vessel is reduced to a point that the dip tube is free from liquid inside the dip tube or at the bottom of the dip tube. Once the dip tube is free of the liquid, then a vacuum source may be used to purge vapor within the chemical vessel without the risk of damage to the vacuum source.

Abstract: Multi-zone reactors, systems including a multi-zone reactor, and methods of using the systems and reactors are disclosed. Exemplary multi-zone reactors include a movable susceptor assembly and a moveable plate. The movable susceptor assembly and movable plate can move vertically between reaction zones of a reactor to expose a substrate to multiple processes or reactants.

Abstract: A laser alignment fixture for a reactor system may be used to align components of the reactor system to allow for a uniform deposition of a thin film onto a substrate. The laser alignment fixture may include: a lid assembly; and a plurality of laser and sensor assemblies. The laser alignment fixture may align at least: a flow control ring, a susceptor, and a side wall of the reactor system.

Abstract: A semiconductor processing device comprises a susceptor assembly comprising a wafer support configured to support a wafer. The wafer support comprises a wafer support body configured to support the wafer, a purge channel extending laterally from an inner portion of the wafer support body to an outer portion of the wafer support body, a first plenum channel disposed at the outer portion of the wafer support and in fluid communication with the purge channel, and an outlet to deliver purge gas to an edge of the wafer, the outlet in fluid communication with the first plenum channel, a purge gas supply hole on a surface opposite to the wafer support body. The purge gas supply hole is in fluid communication with the purge channel, and a plurality of first purge holes fluidly communicated with the first plenum channel and the purge channel.

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold comprising heater blocks with heater elements mounted on a manifold body. Advantageously, the heater blocks are detachably mounted for easy replacement.

Abstract: A laser alignment fixture for a reactor system may be used to align components of the reactor system to allow for a uniform deposition of a thin film onto a substrate. The laser alignment fixture may include: a lid assembly; and a plurality of laser and sensor assemblies. The laser alignment fixture may align at least: a flow control ring, a susceptor, and a side wall of the reactor system.

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent the first block.

Abstract: A reaction chamber may comprise a reaction chamber volume enclosed within the reaction chamber; a susceptor configured to support a substrate disposed in the reaction chamber volume; a reaction space above the susceptor, and a lower chamber space below the susceptor, within the reaction chamber volume; and/or a sealing system causing the reaction space and the lower chamber space to be at least partially fluidly separate. A sealing system may comprise a spacer plate surrounding and coupled to the susceptor; and/or a spring coupled to the spacer plate and the susceptor having a spring bias toward a compressed position or an extended position, such that the spring bias facilitates creation of at least a partial seal between the spacer plate and the susceptor, causing at least partial fluid separation between the reaction space and the lower chamber space as the susceptor moves up and down within the reaction chamber.

Abstract: A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.

Abstract: A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

Abstract: A laser alignment fixture for a reactor system may be used to align components of the reactor system to allow for a uniform deposition of a thin film onto a substrate. The laser alignment fixture may comprise: a lid assembly; and a plurality of laser and sensor assemblies. The laser alignment fixture may align at least: a flow control ring, a susceptor, and a side wall of the reactor system.

Abstract: An alignment fixture for a reactor system may comprise a fixture body comprising an inner perimeter at least partially defining a shape which comprises an inner space of the fixture body, wherein the inner space is configured to receive a susceptor of a reactor system; and/or a measuring protrusion coupled to the fixture body at a first position and protruding from the fixture body toward the inner space. The measuring protrusion may comprise an indicator between the fixture body and a measuring protrusion end of the measuring protrusion.

Abstract: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.