Abstract: A reactor system can comprise a substrate carrier, which can be configured to move a substrate within the reactor system, and/or a translating arm; a temperature measurement device; a processor; and/or a tangible, non-transitory memory configured to communicate with the processor having instructions stored thereon that, in response to execution by the processor, cause the processor to perform operations. The temperature measurement device can be coupled to the substrate carrier and/or translating arm, and/or the temperature measurement device can be coupled another component of the reactor system. The temperature measurement device can be configured to measure a temperature of a processed substrate within the reaction system. The processor can perform operations including measuring the temperature of the substrate; and/or comparing the measured temperature with a reference temperature.

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent to the first block.

Abstract: Various embodiments of the present technology may provide a vessel coupled to a first reaction chamber and a second reaction chamber via a first gas line and second gas line, respectively. Each gas line may comprise a variable feature, wherein each flexible feature is configured to change the flow dynamics of a gas flowing through the gas lines.

Abstract: A chemical vessel is disclosed comprising a dip tube and a level sensor tube arranged in an elongated counterbore incorporated into a housing of the chemical vessel. The chemical vessel may be configured to allow a pushback routine to take place, whereby a level of liquid in the chemical vessel is reduced to a point that the dip tube is free from liquid inside the dip tube or at the bottom of the dip tube. Once the dip tube is free of the liquid, then a vacuum source may be used to purge vapor within the chemical vessel without the risk of damage to the vacuum source.

Abstract: Reactor systems and methods for rapidly modulating a temperature of a substrate are disclosed. Exemplary reactor systems can include one more temperature regulating gas sources coupled to a reaction chamber of a reactor. Additionally or alternatively, exemplary reactor systems can include a lift pin assembly that can move a substrate away from a susceptor surface during processing.

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. The manifold may further comprise an insulator cap disposed about the first block or the second block. The semiconductor processing device may comprise at least three valve blocks mounted to the second block so that a precursor backflow is prevented. Heater rod(s) can extend through the second block to a location adjacent the first block.

Abstract: Various embodiments of the present technology may provide an apparatus having a susceptor with a plurality of gas channels therethrough and a plurality of pressure sensors coupled to the gas channels. The apparatus may further include a controller in communication with the plurality of sensors and configured to detect a change in pressure or flow rate within the plurality of channels, determine a failure of at least one of the plurality of lift pins based on the detected change in pressure or flow rate, and generate an error signal based on the determined failure.

Abstract: A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

Abstract: An alignment fixture for a reactor system may comprise a fixture body comprising an inner perimeter at least partially defining a shape which comprises an inner space of the fixture body, wherein the inner space is configured to receive a susceptor of a reactor system; and/or a measuring protrusion coupled to the fixture body at a first position and protruding from the fixture body toward the inner space. The measuring protrusion may comprise an indicator between the fixture body and a measuring protrusion end of the measuring protrusion.

Abstract: A substrate lift pin assembly, a system including the assembly, and methods of using the same are disclosed. The assembly can include one or more lift pins and a sensor to determine one or more of presence and condition information of the one or more lift pins. The system can be configured to provide an alarm and/or to cease operations based on the presence and/or condition information.

Abstract: Various embodiments of the present technology may provide a substrate support apparatus with a surface having a first region with a first temperature profile, a second region having a second temperature profile; and a third region having a third temperature profile. The substrate support apparatus may also have a first channel embedded within the body and disposed between the first region and the second region, and a second channel disposed between the second region and the third region.

Abstract: A chemical vessel is disclosed comprising a dip tube and a level sensor tube arranged in an elongated counterbore incorporated into a housing of the chemical vessel. The chemical vessel may be configured to allow a pushback routine to take place, whereby a level of liquid in the chemical vessel is reduced to a point that the dip tube is free from liquid inside the dip tube or at the bottom of the dip tube. Once the dip tube is free of the liquid, then a vacuum source may be used to purge vapor within the chemical vessel without the risk of damage to the vacuum source.

Abstract: An alignment fixture for a reactor system may comprise a fixture body comprising an inner perimeter at least partially defining a shape which comprises an inner space of the fixture body, wherein the inner space is configured to receive a susceptor of a reactor system; and/or a measuring protrusion coupled to the fixture body at a first position and protruding from the fixture body toward the inner space. The measuring protrusion may comprise an indicator between the fixture body and a measuring protrusion end of the measuring protrusion.

Abstract: Various embodiments of the present technology may provide a susceptor assembly. The susceptor assembly may include a susceptor plate and a cap disposed on a surface of the susceptor plate. The cap may have electrodes embedded within it. The susceptor plate may have heating elements embedded within it. The cap may be separated from the susceptor plate by an air gap formed by a plurality of dielectric spacers. The plurality of dielectric spacers may be sized for minimal contact on the cap.

Abstract: Various examples of the present disclosure relate to methods, systems, and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel, maintaining a temperature gradient within an inner volume of the delivery vessel, and returning the chemical to the first phase within the inner volume.

Abstract: Methods for depositing a film on a surface of substrate by cyclical deposition methods including pulsed purge processed are disclosed. The pulsed purge processes include introducing a purge gas into a reaction chamber at a first flow rate, and introducing a purge gas into the reaction chamber at second flow rate, the first flow rate being different to the second flow rate.

Abstract: The current disclosure relates to example method, system and apparatus for coupling a delivery vessel disposed at a first location on a substrate processing platform to a remote refill vessel disposed in a second location remote from the substrate processing platform via a first chemical delivery line, storing a chemical in the remote refill vessel in a first phase, changing the chemical in the remote refill vessel to a second phase, transporting the chemical in the second phase, to the delivery vessel via the first chemical delivery line, heating the first chemical delivery line to a first temperature equal to or above a phase change temperature of the chemical, and coupling the delivery vessel to an accumulator via a second chemical delivery line.

Abstract: A susceptor assembly includes a heater pedestal and a cap coupled to the heater pedestal. The cap can include one or mor through holes to facilitate purging and/or reduce dead volumes associated with the susceptor assemblies. Reactor systems including such assemblies are also disclosed.

Abstract: Weighted lift pin constructions as disclosed may be used with a semiconductor fabrication processing apparatus. The weighted lift pin constructions comprise a lift pin and a weight element disposed along an end of the lift pin. The weight element is removably retained on the lift pin by a retaining element that may be a clip element, an O-ring element, and differently configured lift pin and weight element threaded sections. When the clip element or O-ring element used, the weight element includes a collar adjacent an end of an opening in the weight element to accommodate placement of the clip or O-ring element therein as retained on the lift pin to thereby maintain axial placement of the lift pin relative to the weight element. Such maintained axial placement may also be achieved by interference locked engagement between differently configured lift pin and weighted element threaded sections.

Abstract: A reactor system may comprise a reaction chamber enclosed by a chamber sidewall, and a susceptor disposed in the reaction chamber between a reaction space and a lower chamber space comprised in the reaction chamber. The susceptor may comprise a pin hole disposed through the susceptor such that the pin hole is in fluid communication with the reaction space and the lower chamber space, and such that the reaction space is in fluid communication with the lower chamber space. A lift pin may be disposed in the pin hole. The lift pin may comprise a pin body comprising a pin channel, defined by a pin channel surface, disposed in the pin body such that the reaction space is in fluid communication with the lower chamber space when the lift pin is disposed in the pin hole.