Abstract: In some examples, a rib cover is provided for a multi-station processing module having a rib disposed between adjacent processing chambers. An example rib cover comprises a first portion for supporting the rib cover on the rib, a first side shield to cover a first wall of the rib when the rib cover is fitted thereto, and at least one spacer to hold an inner surface of the rib cover away from the covered rib.

Abstract: The present disclosure relates to films such as membranes and coatings and to coated articles. The films comprise a combination of at least one elastomeric styrenic block copolymer which is optionally functionalized with functional groups different from sulfonic acid or sulfonate ester functional groups, and at least one sulfonated block copolymer. Films comprising the optionally functionalized block copolymer(s) and the additional sulfonated block copolymer(s) are elastic and are moisture-vapor permeable, and thus useful as coatings in breathable clothing and footwear, industrial workwear including cleanroom coveralls, in medical applications such as wound dressings and protective clothing, for bed sheets and mattress or seat covers, and other non-apparel applications.

Abstract: Generally disclosed are apparatus and related methods for blunting sharp corners or otherwise reducing the force of an impact with sharp corners. In one embodiment, the apparatus may generally be in the form of a creature with at least a torso and four appendages defined internally by a skeleton of foam members having a bendable metal core. In use, the appendages may be bent around corners so that the torso of the creature removably, yet securely, resides over the corner whereby the corners are blunted or otherwise the force of impacts with the corner are reduced (e.g., the foam and other components of the apparatus may act as a shock absorber). In a preferred embodiment, a stomach portion of the torso features a non-slip padding that may receive the corner to be blunted to further secure the apparatus over the targeted corner.

Abstract: Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.

Abstract: An article made up of a substrate which has a polymer coating applied to at least one of its surfaces, wherein the polymer coating forms an interrupted pattern such that at least 10% to 80% of the substrate surface remains uncoated, and wherein the polymer coating comprises a moisture permeable polymer.

Abstract: Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.

Abstract: Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.

Abstract: Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C., for example between about 23° C. and about 200° C. or at about 100° C. This silicon carbide layer may then be densified to remove hydrogen content. Additionally, the silicon carbide layer may be exposed to a nitrogen source to provide reactive N—H groups, which can then be used to continue film deposition using other methods. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.

Abstract: Provided are processes for the low temperature deposition of silicon-containing films using activated SiH-containing precursors. The SiH-containing precursors may have reactive functionality such as halogen or cyano moieties. Described are processes in which halogenated or cyanated silanes are used to deposit SiN films. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.

Abstract: Provided are processes for the low temperature deposition of silicon-containing films using carbosilane precursors containing a carbon atom bridging at least two silicon atoms. Certain methods comprise providing a substrate; in a PECVD process, exposing the substrate surface to a carbosilane precursor containing at least one carbon atom bridging at least two silicon atoms; exposing the carbosilane precursor to a low-powered energy sourcedirect plasma to provide a carbosilane at the substrate surface; and densifying the carbosilanestripping away at least some of the hydrogen atoms to provide a film comprising SiC. The SiC film may be exposed to the carbosilane surface to a nitrogen source to provide a film comprising SiCN.

Abstract: Methods for deposition of silicon carbide films on a substrate surface are provided. The methods include the use of vapor phase carbosilane precursors and may employ plasma enhanced atomic layer deposition processes. The methods may be carried out at temperatures less than 600° C., for example between about 23° C. and about 200° C. or at about 100° C. This silicon carbide layer may then be densified to remove hydrogen content. Additionally, the silicon carbide layer may be exposed to a nitrogen source to provide reactive N—H groups, which can then be used to continue film deposition using other methods. Plasma processing conditions can be used to adjust the carbon, hydrogen and/or nitrogen content of the films.

Abstract: The present disclosure relates to films such as membranes and coatings and to coated articles. The films comprise a combination of at least one elastomeric styrenic block copolymer which is optionally functionalized with functional groups different from sulfonic acid or sulfonate ester functional groups, and at least one sulfonated block copolymer. Films comprising the optionally functionalized block copolymer(s) and the additional sulfonated block copolymer(s) are elastic and are moisture-vapor permeable, and thus useful as coatings in breathable clothing and footwear, industrial workwear including cleanroom coveralls, in medical applications such as wound dressings and protective clothing, for bed sheets and mattress or seat covers, and other non-apparel applications.