Abstract: The present invention is a polishing pad conditioning head for a CMP and similar types of apparatus that is especially useful in conditioning the surface of fixed-abrasive CMP polishing pads to maintain optimal process conditions for the planarization process on dielectric and metal films on semiconductor wafers, as well as wafers and disks used in computer hard disk drives. The polishing pad conditioning head comprises a substrate and a layer of fine-grain chemical vapor deposited polycrystalline diamond that is bonded onto the substrate. Alternatively, a thin sheet of polycrystalline diamond may be deposited on a preferred growth substrate by a chemical vapor deposition process, then removed from the growth substrate and then bonded to the CMP conditioning disk substrate.

Abstract: A chemical mechanical planarization tool that reduces a volume of polishing chemistry used in a wafer polishing process includes a rinse bar (87) for removing polishing chemistry and particulates from a polishing media and a slurry measurement system (84) for regulating a pump (83) of a slurry delivery system. A volume of the slurry delivery system is reduced to less than 100 milliliters. Approximately a minimum volume of polishing chemistry for polishing a single wafer is dispensed during each wafer polishing process of a wafer lot. During each wafer polishing process the slurry delivery system is purged to prevent settling, agglomeration, and hardening of the polishing chemistry. The rinse bar (87) sprays a surface of the polishing media to remove spent polishing chemistry and particulates prior to polishing another semiconductor wafer.

Abstract: A chemical mechanical planarization tool that reduces a volume of polishing chemistry used in a wafer polishing process includes a rinse bar (87) for removing polishing chemistry and particulates from a polishing media and a slurry measurement system (84) for regulating a pump (83) of a slurry delivery system. A volume of the slurry delivery system is reduced to less than 100 milliliters. Approximately a minimum volume of polishing chemistry for polishing a single wafer is dispensed during each wafer polishing process of a wafer lot. During each wafer polishing process the slurry delivery system is purged to prevent settling, agglomeration, and hardening of the polishing chemistry. The rinse bar (87) sprays a surface of the polishing media to remove spent polishing chemistry and particulates prior to polishing another semiconductor wafer.

Abstract: The invention is a process for cleaning a chamber after a chemical vapor deposition has been performed therein. A residue formed during the deposition is combined with a reactive species to form a gas containing an organic substance once found in the residue and to form a film on the chamber walls and internal parts. The gas and the film are removed from the chamber. The formation of a polymer byproduct on the chamber walls and other internal parts of the chamber is minimized by the method of the invention.

Abstract: The invention is a process for cleaning a chamber after a chemical vapor deposition has been performed therein. A residue formed during the deposition is combined with a reactive species to form a gas containing an organic substance once found in the residue and to form a film on the chamber walls and internal parts. The gas and the film are removed from the chamber. The formation of a polymer byproduct on the chamber walls and other internal parts of the chamber is minimized by the method of the invention.

Abstract: A low-pressure chemical vapor deposition process is disclosed for creating high-density, highly-conformal titanium nitride films which have very low bulk resistivity, and which provide excellent step coverage. The process utilizes a metal-organic compound, tetrakis-dialkylamido-titanium Ti(NR.sub.2).sub.4, as the primary precursor, in combination with an activated species which attacks the alkyl-nitrogen bonds of the primary precursor, and which will convert the displaced alkyl groups into a volatile compound. Any noble gas, as well as nitrogen or hydrogen, or a mixture of two or more of the foregoing may be used as a carrier for the precursor. The activated species, which may include a halogen, NH.sub.3, or hydrogen radicals, or a combination thereof, are generated in the absence of the primary precursor, at a location remote from the deposition chamber. The wafer is heated to a temperature within a range of 200.degree.-600.degree. C.

Abstract: A low-pressure chemical vapor deposition process is disclosed for creating high-density, highly-conformal titanium nitride films which have very low bulk resistivity, and which provide excellent step coverage. The process utilizes a metal-organic compound, tetrakis-dialkylamido-titanium Ti(NR.sub.2).sub.4, as the primary precursor, in combination with an activated species which attacks the alkyl-nitrogen bonds of the primary precursor, and which will convert the displaced alkyl groups into a volatile compound. Any noble gas, as well as nitrogen or hydrogen, or a mixture of two or more of the foregoing may be used as a carrier for the precursor. The activated species, which may include a halogen, NH.sub.3, or hydrogen radicals, or a combination thereof, are generated in the absence of the primary precursor, at a location remote from the deposition chamber. The wafer is heated to a temperature within a range of 200.degree.-600.degree. C.