Abstract: A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, the first magnetic layer including a magnetic film of MnxGey (77 atm %?x?82 atm %, 18 atm %?y?23 atm %, x+y=100 atm %).

Abstract: There is provided with an etching method using an etching apparatus. Four arms can be positioned in a direction substantially from a center of the stage toward a peripheral portion with an angle difference of about 90°. Etchant is supplied to a first position nearest to the center of the object which is rotating, from a first etchant supply nozzle placed on a first arm. Etchant is further supplied to a second position second nearest to the center of the object, from a second etchant supply nozzle placed on a second arm. The second arm is substantially symmetrically positioned with respect to the first arm and the second arm has an angle difference of about 180° with respect to the first arm.

Abstract: Provided is a Co-based alloy for a living body based on Co—Cr—W—Fe, including a composition of Cr: 5% by mass to 30% by mass, W: 5% by mass to 20% by mass, Fe: 1% by mass to 15% by mass, Co as the remainder, and unavoidable impurities. In this alloy, when the content of W is 5% by mass to 10% by mass, the content of Fe can be set to be in a range of 1% by mass to 5% by mass, and when the content of W is 11% by mass to 20% by mass, the content of Fe can be set to be in a range of 3% by mass to 15% by mass.

Abstract: Provided is a radiation detector with improved n/? discrimination and usable even under high counting rate conditions with a reduced load on a signal-processing system. The detector capable of distinguishing neutron and gamma-ray events includes: a scintillator; an optical filter; a first photodetector to which a first part of light emitted from the scintillator is introduced via the optical filter; and a second photodetector to which a second part of light emitted from the scintillator is introduced not via the optical filter, wherein, for a set of two wavelengths A and (A+B) nm, the scintillator emits at least a light of A nm and a light of (A+B) nm when irradiated by gamma-ray, and emits a light of A nm and does not emit a light of (A+B) nm when irradiated by neutrons; and the optical filter blocks the light of A nm and transmits the light of (A+B) nm.

Abstract: A pressure type flow rate control apparatus is provided wherein flow rate of fluid passing through an orifice is computed as Qc=KP1 (where K is a proportionality constant) or as Qc=KP2m (P1?P2)n (where K is a proportionality constant, m and n constants) by using orifice upstream side pressure P1 and/or orifice downstream side pressure P2. A fluid passage between the downstream side of a control valve and a fluid supply pipe of the pressure type flow rate control apparatus comprises at least 2 fluid passages in parallel, and orifices having different flow rate characteristics are provided for each of these fluid passages, wherein fluid in a small flow quantity area flows to one orifice for flow control of fluid in the small flow quantity area, while fluid in a large flow quantity area flows to the other orifice for flow control of fluid in the large flow quantity area.

Abstract: Provided is a scintillation neutron detector capable of measuring neutrons with precision even under a high amount of ? rays as background noise and excellent in neutron counting precision, the scintillation neutron detector comprising a neutron scintillator crystal containing 6Li, and the crystal having a specific surface area of no less than 60 cm2/cm3.

Abstract: A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.

Abstract: The present invention answers the demands of power generating device and biosensor development and provides a flexible, free-standing type protein containing carbon nanotube film, and a sensor and power generating device each equipped with the carbon nanotube film as an electrode. According to the present invention a carbon nanotube free standing film is provided including a carbon nanotube aggregate formed by aggregating a plurality of carbon nanotubes, and a plurality of enzymes included between the plurality of carbon nanotubes. The carbon nanotube film may include a different protein to the enzyme and may include a surfactant agent between the plurality of carbon nanotubes.

Abstract: A signal-processing device, which processes transparent images each expressed by transparent superimposition of a target such as an affected part and a background, includes a transparent image acquiring unit that acquires the transparent images each including the target at a plurality of times; a calculating unit that calculates a component of the transparent image originating from the target and a component of the transparent image originating from the background at a given time t among the plurality of times in association with estimated values of at least one of a distribution originating from the target and a distribution originating from the background and that evaluates consistency with the transparent images; and an updating unit that updates the estimated values of at least one of a distribution originating from the target and a distribution originating from the background at the time t based on the evaluation result.

Abstract: A manufacturing method of a shower plate includes inserting a green body, a degreasing body, a temporary sintered body or a sintered body of a ceramic member, which has a plurality of gas discharge holes or gas flow holes, into a longitudinal hole of a green body, a degreasing body or a temporary sintered body of the shower plate, which has been formed by power ingredients; and sintering them simultaneously.

Abstract: A plasma processing apparatus includes: a processing chamber produced from a metal; a susceptor configured to mount a substrate; an electromagnetic wave source that supplies an electromagnetic wave; one or more dielectric member provided at an inner wall of the processing chamber, and configured to transmit the electromagnetic wave into an inside of the processing chamber; one or more metal electrode, wherein each metal electrode is installed on a bottom surface of each dielectric member such that a part of the each dielectric member is exposed to the inside of the processing chamber; and a surface wave propagating section which is a metal surface facing the susceptor, the surface wave propagating section being installed adjacent to the dielectric member and being exposed to the inside of the processing chamber. The surface wave propagating section and a bottom surface of the metal electrode are positioned on the same plane.

Abstract: A multilevel interconnect structure in a semiconductor device and methods for fabricating the same are described. The multilevel interconnect structure in the semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere.

Abstract: A fluid injection device includes: a pulse generation section that includes a fluid chamber whose volume is changeable, and an inlet flow passage and an outlet flow passage that are connected to the fluid chamber; a first connection flow passage connected to the outlet flow passage, having an end portion; a second connection flow passage connected to the inlet flow passage; a fluid injection opening formed at the end portion of the first connection flow passage, having a diameter smaller than the diameter of the outlet flow passage; a connection flow passage tube including the first connection flow passage and having rigidity adequate to transmit pulses of fluid flowing from the fluid chamber to the fluid injection opening; and a pressure generation section that supplies fluid to the inlet flow passage.