Abstract: A method of and apparatus for analyzing a failure is provided. A laser beam generator (1) has a plurality of laser beam sources differing in wavelength from each other. First, the laser beam generator (1) generates a laser beam (B1) of about 1.1 &mgr;m in wavelength, and a failure analyzer (6) stores therein a resultant first current image. Next, the laser beam generator (1) generates a laser beam (B1) of about 1.3 &mgr;m in wavelength, and the failure analyzer (6) stores therein a resultant second current image. Next, the laser beam generator (1) generates a laser beam (B1) of not less than 2.0 &mgr;m in wavelength, and the failure analyzer (6) stores therein a resultant third current image. The failure analyzer (6) analyzes the cause and site of a failure in a sample (3) by reference to the first to third current images stored therein. The method can diagnose and localize the failure in a chip by reference to only the current images obtained by the laser beam irradiation.

Abstract: A failure analysis device is provided which can realize automatic light emission analysis even when the tested chips have logic LSIs etc. fabricated therein. A comparator (11) compares individual Iddq values (I1) to (In) sequentially provided from a probe card (3) with a threshold (Ith1) provided from a main control unit (7). An abnormality occurrence vector specifying unit (8) receives data (D2) about the results of comparison from the comparator (11) and specifies an abnormality occurrence vector or vectors from among a plurality of test vectors (TB1) to (TBn) on the basis of the data (D2). More specifically, the abnormality occurrence vector specifying unit (8) specifies the test vector as the abnormality occurrence vector when the corresponding detected Iddq value is larger than the threshold (Ith1).

Abstract: A dummy pattern layer, which has not been effectively used, included in upper wire layers of a memory part of a system LSI chip is utilized as a large-scale wire TEG (test element group) region while leaving a dummy pattern function. Thus, the system LSI chip is provided with the wire TEG region independent of a product region while keeping the product region.

Abstract: The object of this invention is to provide a solid polymer electrolyte which is excellent in durability and of low cost, and membranes, solutions for electrode catalyst coating, membrane/electrode assemblies and fuel cells which use the electrolyte. According to this invention, there can be provided a fuel cell which comprises an electrode assembly having an electrode catalyst membrane formed therein, said catalyst membrane comprising a polymer electrolyte membrane held between an anode on one side of the principal plane of the electrolyte membrane and a cathode on the other side of the principal lane thereof, current collecting plates provided each independently in close contact, to the anode side and the cathode side of the electrode assembly, and electroconductive separators having gas supply passages to the anode and to the cathode provided on the outside surfaces of the current collecting plates.

Abstract: A scanning probe microscope includes a laser diode (1a) as a light source for emitting light lower in energy level than band gap of semiconductor as a sample.

Abstract: The object of this invention is to provide a solid polymer electrolyte which is excellent in durability and of low cost, and membranes, solutions for electrode catalyst coating, membrane/electrode assemblies and fuel cells which use the electrolyte. According to this invention, there can be provided a fuel cell which comprises an electrode assembly having an electrode catalyst membrane formed therein, said catalyst membrane comprising a polymer electrolyte membrane held between an anode on one side of the principal plane of the electrolyte membrane and a cathode on the other side of the principal lane thereof, current collecting plates provided each independently in close contact, to the anode side and the cathode side of the electrode assembly, and electroconductive separators having gas supply passages to the anode and to the cathode provided on the outside surfaces of the current collecting plates.

Abstract: An object of the present invention is to provide a highly durable solid polymer electrolyte that has a deterioration resistance equal to or higher than that of the fluorine-containing solid polymer electrolytes or a deterioration resistance sufficient for practical purposes, and can be produced at a low cost. According to the present invention, there is provided a solid polymer electrolyte comprising a polyether ether sulfone that is used as a electrolyte and has sulfoalkyl groups bonded to its aromatic rings and represented by the general formula —(CH2)n—SO3H.

Abstract: The object of this invention is to provide an electrode for a polymer electrolyte fuel cell, a separator therefor, a polymer electrolyte fuel cell and a generating system, which electrode is simplified in structure, have high handling property, can be transferred precisely to a predetermined position, and enables automation of a production process.

Abstract: A failure analysis device is provided which can realize automatic light emission analysis even when the tested chips have logic LSIs etc. fabricated therein. A comparator (11) compares individual Iddq values (I1) to (In) sequentially provided from a probe card (3) with a threshold (Ith1) provided from a main control unit (7). An abnormality occurrence vector specifying unit (8) receives data (D2) about the results of comparison from the comparator (11) and specifies an abnormality occurrence vector or vectors from among a plurality of test vectors (TB1) to (TBn) on the basis of the data (D2). More specifically, the abnormality occurrence vector specifying unit (8) specifies the test vector as the abnormality occurrence vector when the corresponding detected Iddq value is larger than the threshold (Ith1).

Abstract: Data containing defect position coordinates obtained based on the result of physical inspection of foreign material, a defect or the like at the surface of a semiconductor wafer by a defect inspecting apparatus is stored. Also stored is data of physical coordinates obtained based on fail bit data from a tester. Data indicating an additional failure region is produced by an additional failure region estimating apparatus based on the fail bit data, and is stored. Collation produces data of corrected physical position coordinates by adding the stored data of limitation by failure mode to the stored data of physical position coordinates, and collates the data of corrected physical position coordinates with stored data of defect position coordinates. Accordingly, accuracy in collation is improved, and failure can be analyzed even if caused not by a defect located at an address of the failure obtained by the fail bit data but by a defect relating to the defect located at the address of a failure.

Abstract: A highly thermal-conductive and thermal-resistant electrically insulated coil with less outflow of a thermosetting resin composition can be produced, to provide a small-scale, light-weight rotating machine with high power. The thermosetting resin composition comprises (a) a polyfunctional epoxy resin containing three or more p-(2,3-epoxypropoxy) phenyl groups and a group represented by the Chemical formula 1; or an epoxy resin with a naphthalene backbone, represented by the Chemical formula 3, 4 or 5 or an epoxy resin with an anthracene backbone, such as diglycidyl ether of anthracene diol and triglycidyl ether of anthracene triol; (b) a bifunctional epoxy resin containing two p-(2,3-epoxypropoxy) phenyl groups; (c) an acid anhydride curing agent; and (d) a metal acetonate curing catalyst represented by the Chemical formula 2 at 0.1 to 5 parts by weight per 100 parts by weight of the epoxy resins.

Abstract: A sample to be measured having a semiconductor integrated circuit having interconnection lines is set on a scanning photoinduced current analyzer with one end of the interconnection line being open and the other end connected through a current amplifier to the ground. When a laser beam falls on part having a comparatively low thermal conductivity, such as a part having a void, of the interconnection line while the interconnection line is scanned with the laser beam, temperature distribution in the interconnection line changes at the part. The change in temperature distribution produces spontaneous thermoelectromotive force by the Seebeck effect to induce a current. The current amplifier amplifies the induced current, and then an image date converter converts the amplified current into image information in synchronism with the scanning operation of the laser beam.

Abstract: Data containing defect position coordinates obtained based on the result of physical inspection of a foreign material, a defect and the like at a surface of a semiconductor wafer by a defect inspecting apparatus is stored in storage means. Data of physical position coordinates obtained based on fail bit data from a tester is stored in storage means. Data indicating an additional failure region is produced by additional failure region estimating means based on the fail bit data, and is stored in storage means. Collating means produces data of corrected physical position coordinates by adding the data of limitation by failure mode stored in storage means to the data of physical position coordinates stored in storage means, and collates the data of corrected physical position coordinates with data of defect position coordinates stored in storage means.

Abstract: A method of analyzing a failure of semiconductor device by using an emission microscope for easy analysis of current leakage is disclosed. Light emission information is stored in X/Y memory spaces (16), with a Z direction indicating an emitted light intensity. A light emission presence bit (17) in the light emission information means a bit for which light emission is judged as being present, and the number of light emission presence bits is determined on the basis of the emitted light intensity. An image memory (11) has a three-dimensional memory space including an X/Y space indicative of plane positions of light emitting portions and a Z space indicative of the emitted light intensity. The position and intensity of light emission are detected by searching the light emission information stored in the image memory (11) to analyze the failure.

Abstract: In the production of electrically insulated coils which make up insulating layers, insulating material is wound around an electric conductor to form an insulating substrate, then impregnating varnish consisting of thermosetting resin is applied to the insulating substrate and hardened. In this electrically insulated coil production method, the impregnating varnish is made up of acid anhydride setting epoxy resin elements that include latent accelerators. These accelerators take more than 30 days to increase their initial viscosity by three times during storage at 25 degrees centigrade. After the insulating substrate is impregnated with the varnish, the substrate is heated at a temperature which will cause the impregnating varnish on the surface of the insulating substrate to lose its fluidity in under 30 minutes in order to preset the varnish.

Abstract: A sample to be measured having a semiconductor integrated circuit having interconnection lines is set on a scanning photoinduced current analyzer with one end of the interconnection line connected to a ground and the other end connected through a current amplifier to the ground. When a laser beam falls on part having a comparatively low thermal conductivity, such as a part having a void, of the interconnection line while the interconnection line is scanned with the laser beam, temperature distribution in the interconnection line changes at the part. The change in temperature distribution produces spontaneous thermoelectromotive force by the Seebeck effect to induce a current. The current amplifier amplifies the induced current, and then an image date converter converts the amplified current into image information in synchronism with the scanning operation of the laser beam.

Abstract: A semiconductor device without erroneous operation and deterioration of characteristics in a transistor even when an impurity region is formed in self-alignment by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. This semiconductor device includes a gate electrode formed of a polycrystal silicon layer 4b having the crystal orientation of the crystal grains arranged in a definite orientation. By implanting ions at a predetermined angle with respect to the crystallographic axis of the crystal grains of the polycrystal silicon layer 4b in forming a p.sup.+ impurity region 5 by ion implantation using the gate electrode as a mask, the channeling phenomenon where ions pass through the gate electrode is prevented. Therefore, generation of erroneous operation and deterioration of characteristics in a transistor are prevented in forming an impurity region in self-alignment by ion implantation using the gate electrode as a mask.

Abstract: A thermoplastic resin composition for casting high-voltage coils containing two kinds of fillers (A) and (B), and products as molded coils and panels obtained by casting and curing the composition.The composition of the present invention contains 60%-85% by weight, based on the total weight of the composition, of a silica type filler which is an admixture (A) a spherical silica having an average particle diameter of 0.1-0.9 .mu.m and (B) a ground silica having an average particle diameter of 3-9 .mu., the ratio A/(A+B) being 1%-7% by weight.Products as molded coils and panels prepared by using the composition have good resistance to cracking and resistance to moisture.

Abstract: A semiconductor device not aggravated in transistor characteristic even when an impurity region is formed by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. The semiconductor device includes a gate electrode 10 implemented by a polycrystal silicon layer 4 having the crystal orientation of the crystal grains thereof arranged in a predetermined orientation, and a single crystal silicon layer 5 formed on the polycrystal silicon layer 4 having a crystal orientation identical to that of the polycrystal silicon layer 4. The channelling phenomenon in which B.sup.+ ions pass through to beneath the gate electrode 10 is prevented in forming an impurity region 6 by ion implantation to obtain a semiconductor device that does not have the characteristic of the formed transistor aggravated.

Abstract: A semiconductor device not aggravated in transistor characteristic even when an impurity region is formed by ion implantation using a gate electrode as a mask, and a method of manufacturing thereof are disclosed. The semiconductor device includes a gate electrode 10 implemented by a polycrystal silicon layer 4 having the crystal orientation of the crystal grains thereof arranged in a predetermined orientation, and a single crystal silicon layer 5 formed on the polycrystal silicon layer 4 having a crystal orientation identical to that of the polycrystal silicon layer 4. The channelling phenomenon in which B.sup.+ ions pass through to beneath the gate electrode 10 is prevented in forming an impurity region 6 by ion implantation to obtain a semiconductor device that does not have the characteristic of the formed transistor aggravated.