Abstract: In an injection process, molten resin is successively injected from a first flow channel and a second flow channel connected with each other in order into a cavity of a metal mold. High-temperature resin existing in the first flow channel is injected in advance into the cavity as a part of a single shot of molten resin to later form a skin layer of a molded article. Other low temperature resin near a flowable limit existing in the second flow channel is subsequently injected into the cavity as another part of the single shot of molten resin to later form a core layer of the molded article. A low temperature resin remaining in the first flow channel when injection is completed is warmed to be a high-temperature resin before the next cycle, thereby allowing successive molding of molded articles.

Abstract: A nitride semiconductor laser device includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer which are formed in this order on a nitride semiconductor substrate, and by using crystal stress in the n-type semiconductor layer, the laser device is allowed to have two or more light-emitting points emitting light with different peak wavelengths in the active layer. A method for producing a nitride semiconductor laser device includes a step of forming an n-type semiconductor layer on a nitride semiconductor substrate, a step of forming an active layer on the n-type semiconductor layer, and a step of forming a p-type semiconductor layer on the active layer. In the step of forming the n-type semiconductor layer, the n-type semiconductor layer is formed so as to produce a stress difference in a portion of the n-type semiconductor layer.

Abstract: Image capturing accuracy is improved while a simple optical system is used. An image capture device includes: a polarizing filter that blocks non-transmitted light that has been in polarized light of an infrared ray radiated from a light source and has not been transmitted through an image capturing target and transmitted light that has been in the polarized light and has been transmitted through the image capturing target without diffusion inside the image capturing target, and transmits transmitted light that has been in the polarized light and has been diffused inside the image capturing target and transmitted therethrough; and an image sensor that receives the light that has been transmitted through the polarizing filter and captures an image of the image capturing target.

Abstract: Image capturing accuracy is improved while a simple optical system is used. An image capture device includes: a polarizing filter that blocks non-transmitted light that has been in polarized light of an infrared ray radiated from a light source and has not been transmitted through an image capturing target and transmitted light that has been in the polarized light and has been transmitted through the image capturing target without diffusion inside the image capturing target, and transmits transmitted light that has been in the polarized light and has been diffused inside the image capturing target and transmitted therethrough; and an image sensor that receives the light that has been transmitted through the polarizing filter and captures an image of the image capturing target.

Abstract: Provided is an imaging device capable of improving imaging accuracy while suppressing increase in a size of the device and cost thereof. An imaging device includes: a light source which is a semiconductor laser that radiates infrared light to an imaging target; a polarizing filter that blocks light that is reflected by a surface of the imaging target and transmits light that is reflected inside the imaging target; and an image sensor that receives the light that is transmitted through the polarizing filter and captures an image of the imaging target.

Abstract: A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.

Abstract: A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.