Abstract: A solution for washing away residue, comprising an aqueous solution of a water-soluble high molecular compound in which is dissolved at least one kind of dissolving agent selected from an amine and a fluoride. The washing solution is capable of effectively washing away the residue formed during the production of electronic circuits, is very lowly corrosive to the insulating films, low-dielectric interlayer insulating films and wirings, and offers an advantage of little generating foam.

Abstract: The invention is provided to make interface logic unnecessary and simplify a control system in a serial communication system for putting a line connecting a CPU and a control IC into serial form. The serial communication system 1 of the present invention comprises a center terminal 10, connected to the CPU 50 via the CPU control bus, for converting at least the operation instructions from a parallel signal to a serial signal for transmission to the serial communication line 30, and a local terminal 20, connected to the center terminal 10 via the serial communication line 30, for reconverting at least the serially converted operation instructions back to a parallel signal for transmission to the control IC 60. The local terminal 20 comprises a CPU emulation controller 2 for providing the CPU control bus in a pseudo manner, and is connected to the control IC 60 via the pseudo CPU control bus provided by the CPU emulation controller 21.

Abstract: A solution for washing away residue, comprising an aqueous solution of a water-soluble high molecular compound in which is dissolved at least one kind of dissolving agent selected from an amine and a fluoride. The washing solution is capable of effectively washing away the residue formed during the production of electronic circuits, is very lowly corrosive to the insulating films, low-dielectric interlayer insulating films and wirings, and offers an advantage of little generating foam.

Abstract: The present invention relates to a resist processing device and resist processing method that enable resist pattern formation with a high degree of accuracy, and furthermore, enable in continuous dry etching, an isotropic etching possessing extremely high selectivity. The resist processing device is provided with at least a mechanism for the radiation of ultraviolet rays onto a substrate having a resist formed thereon, and a mechanism for the introduction of inert gas into the device. The resist processing method is characterized in that the radiation of ultraviolet rays onto a substrate which has a resist form thereon is conducted in an inert gas atmosphere.