Patents by Inventor Tohru Nunoi

Tohru Nunoi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7858873
    Abstract: There is provided a photovoltaic cell, which comprises: a photo-electric conversion layer having a front surface and a rear surface, and a reflection layer provided on the rear surface of the photo-electric conversion layer, wherein the reflection layer includes plural types of transparent layers having different refractive indices and alternately stacked and, when light is incident from the front surface of the photo-electric conversion layer, reflects a part of the incident light having a predetermined wavelength back into the photo-electric conversion layer.
    Type: Grant
    Filed: April 12, 2005
    Date of Patent: December 28, 2010
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Mingju Yang, Tohru Nunoi
  • Publication number: 20090038682
    Abstract: A semiconductor substrate for a solar cell, comprising the semiconductor substrate having a surface which constitutes a light incident face of the solar cell and having a surface irregularities structure, wherein the surface has an surface area from 1.2 to 2.2 times that of an imaginary smooth face and the standard deviation of the heights of the irregularities is 1.0 ?m or less.
    Type: Application
    Filed: May 26, 2005
    Publication date: February 12, 2009
    Inventors: Yuji Komatsu, Hiroyuki Fukumura, Yoshiroh Takaba, Ryoh Ozaki, Tohru Nunoi
  • Publication number: 20050221613
    Abstract: A method for forming an electrode according to the present invention includes a step of discharging a paste containing an electrode material from a discharge port of a nozzle, and drawing a fine-line pattern on a surface of a semiconductor substrate, and a step of drying and baking the drawn fine-line pattern, and forming a fine-line electrode.
    Type: Application
    Filed: June 2, 2005
    Publication date: October 6, 2005
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Ryoh Ozaki, Hitomi Ohta, Hiroyuki Fukumura, Yoshiroh Takaba, Yuji Komatsu, Tohru Nunoi
  • Patent number: 6946029
    Abstract: An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.
    Type: Grant
    Filed: February 25, 2004
    Date of Patent: September 20, 2005
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihiro Tsukuda, Hiroshi Taniguchi, Kozaburou Yano, Kazuto Igarashi, Hidemi Mitsuyasu, Tohru Nunoi
  • Publication number: 20050178431
    Abstract: There is provided a photovoltaic cell, which comprises: a photo-electric conversion layer having a front surface and a rear surface, and a reflection layer provided on the rear surface of the photo-electric conversion layer, wherein the reflection layer includes plural types of transparent layers having different refractive indices and alternately stacked and, when light is incident from the front surface of the photo-electric conversion layer, reflects a part of the incident light having a predetermined wavelength back into the photo-electric conversion layer.
    Type: Application
    Filed: April 12, 2005
    Publication date: August 18, 2005
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Mingju Yang, Tohru Nunoi
  • Publication number: 20050126620
    Abstract: In a photoelectric conversion device using a first conductivity type semiconductor substrate having convex and concave portions formed on its surface, the device being characterized in that it comprises at least, a second conductivity type semiconductor layer formed on the surface of the first conductivity type semiconductor substrate, a front electrode connected to the second conductivity type semiconductor layer, and a rear electrode formed on the rear surface of the first conductivity type semiconductor substrate, the second conductivity type semiconductor layer being in contact with the front electrode and becoming thinner as it goes farther from the contacted area.
    Type: Application
    Filed: March 3, 2003
    Publication date: June 16, 2005
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Ichiroh Yamasaki, Tohru Nunoi
  • Publication number: 20040175192
    Abstract: An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.
    Type: Application
    Filed: February 25, 2004
    Publication date: September 9, 2004
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Yoshihiro Tsukuda, Hiroshi Taniguchi, Kozaburou Yano, Kazuto Igarashi, Hidemi Mitsuyasu, Tohru Nunoi
  • Patent number: 6596075
    Abstract: A high-quality crystal sheet is provided. An apparatus for use in producing a crystal sheet includes a substrate having a main surface on which a crystal sheet is formed, a crucible holding a melt therein, a movable member holding the substrate to move it to bring its main surface into contact with the melt and then move the substrate away from the melt, and cooling means for cooling the movable member.
    Type: Grant
    Filed: December 26, 2000
    Date of Patent: July 22, 2003
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Kazuto Igarashi, Yoshihiro Tsukuda, Hidemi Mitsuyasu, Hokuto Yamatsugu, Tohru Nunoi, Hiroshi Taniguchi, Koji Yoshida
  • Publication number: 20030111105
    Abstract: An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.
    Type: Application
    Filed: December 20, 2002
    Publication date: June 19, 2003
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Yoshihiro Tsukuda, Hiroshi Taniguchi, Kozaburou Yano, Kazuto Igarashi, Hidemi Mitsuyasu, Tohru Nunoi
  • Patent number: 6521827
    Abstract: An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.
    Type: Grant
    Filed: November 29, 2000
    Date of Patent: February 18, 2003
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Yoshihiro Tsukuda, Hiroshi Taniguchi, Kozaburou Yano, Kazuto Igarashi, Hidemi Mitsuyasu, Tohru Nunoi
  • Publication number: 20020053395
    Abstract: A titanium oxide film containing a dopant element formed on a silicon substrate by supplying a titanium compound for forming the titanium oxide film and a compound of a dopant element for a silicon semiconductor in a gaseous state to a surface of the silicon substrate heated to a predetermined temperature, wherein the concentration of the dopant element in the titanium oxide film becomes progressively higher from the surface of the titanium oxide film to the surface of the silicon substrate.
    Type: Application
    Filed: August 17, 2001
    Publication date: May 9, 2002
    Applicant: Sharp Kabushiki Kaisha
    Inventors: Koichi Ui, Satoshi Okamoto, Tohru Nunoi
  • Publication number: 20010044163
    Abstract: An inexpensive sheet with excellent evenness and a desired uniform thickness can be obtained by cooling a base having protrusions, dipping the surfaces of the protrusions of the cooled base into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. In addition, by rotating a roller having on its peripheral surface protrusions and a cooling portion for cooling said protrusions, the surfaces of the cooled protrusions can be dipped into a melt material containing at least one of a metal material and a semiconductor material for crystal growth of the material on the surfaces of the protrusions. Thus, a sheet with a desired uniform thickness can be obtained without slicing process.
    Type: Application
    Filed: November 29, 2000
    Publication date: November 22, 2001
    Inventors: Yoshihiro Tsukuda, Hiroshi Taniguchi, Kozaburou Yano, Kazuto Igarashi, Hidemi Mitsuyasu, Tohru Nunoi
  • Patent number: 6297134
    Abstract: A titanium oxide film containing a dopant element formed on a silicon substrate by supplying a titanium compound for forming the titanium oxide film and a compound of a dopant element for a silicon semiconductor in a gaseous state to a surface of the silicon substrate heated to a predetermined temperature, wherein the concentration of the dopant element in the titanium oxide film becomes progressively higher from the surface of the titanium oxide film to the surface of the silicon substrate.
    Type: Grant
    Filed: April 20, 2000
    Date of Patent: October 2, 2001
    Assignee: Sharp Kabushiki Kaisha
    Inventors: Koichi Ui, Satoshi Okamoto, Tohru Nunoi
  • Publication number: 20010004874
    Abstract: A high-quality crystal sheet is provided. An apparatus for use in producing a crystal sheet includes a substrate having a main surface on which a crystal sheet is formed, a crucible holding a melt therein, a movable member holding the substrate to move it to bring its main surface into contact with the melt and then move the substrate away from the melt, and cooling means for cooling the movable member.
    Type: Application
    Filed: December 26, 2000
    Publication date: June 28, 2001
    Inventors: Kazuto Igarashi, Yoshihiro Tsukuda, Hidemi Mitsuyasu, Hokuto Yamatsugu, Tohru Nunoi, Hiroshi Taniguchi, Koji Yoshida
  • Patent number: 5736096
    Abstract: A metal purifying apparatus comprises a closed melting furnace equipped with a heater, molten metal holding crucible disposed within the furnace, a vertical hollow rotary shaft penetrating through a top wall of the furnace, a packing sealing off a clearance in the shaft penetrating portion of the top wall around the shaft, rotary drive means for rotatingly driving the shaft, a hollow rotary cooling body fixedly provided at a lower end of the shaft and having an interior space communicating with an interior space of the shaft, and a cooling fluid supply source for supplying a cooling fluid to the interior of the cooling body. The rotary shaft has disposed therein a cooling fluid discharge pipe with a lower end positioned below the top wall of the furnace.
    Type: Grant
    Filed: August 2, 1996
    Date of Patent: April 7, 1998
    Assignees: Sharp Kabushiki Kaisha, Showa Aluminum Corp.
    Inventors: Ryotatsu Otsuka, Jin Zhang, Takashi Tomita, Tohru Nunoi, Tomohiro Machida