Abstract: This spin current magnetization rotational element includes a second ferromagnetic metal layer 1 having a variable magnetization orientation, and spin-orbit torque wiring 2, which extends in a direction that intersects a direction perpendicular to the surface of the second ferromagnetic metal layer 1, and is connected to the second ferromagnetic metal layer 1, wherein the spin resistance of a connection portion of the spin-orbit torque wiring layer 2 that is connected to the second ferromagnetic metal layer 1 is larger than the spin resistance of the second ferromagnetic metal layer 1.

Abstract: A column for defining the interval between a TFT substrate and an opposed substrate is formed at a crossing point between a drain line and a scanning line. At the crossing point where the column is formed, the drain line is formed to have a wider width to prevent light leakage. Further, at the crossing point where the column is formed, the scanning line is formed to have a narrower width to prevent increase of capacitance between the drain line and the scanning line. The column is formed at a crossing point corresponding to a specific color, e.g., a blue pixel B, so that a difference in transmittance and in characteristic of thin film transistors due to formation of the column is initially compensated.

Abstract: The present invention realizes a bright image display by enhancing a numerical aperture of pixels. At least a portion of a pixel electrode is overlapped to a thin film transistor by way of a first insulation film, the pixel electrode is connected to an output electrode of the thin film transistor via a contact hole which is formed in the first insulation film, the counter electrode is arranged above the pixel electrode by way of a second insulation film in a state that the counter electrode is overlapped to the pixel electrode, the counter electrode is formed at a position avoiding the contact hole formed in the first insulation film as viewed in a plan view, and at least a portion of the counter electrode is overlapped to the thin film transistor.

Abstract: To form a sufficiently large storage capacitor, a liquid crystal display device includes a liquid crystal display panel having a first substrate, a second substrate, and a liquid crystal held between the first substrate and the second substrate, the liquid crystal display panel having multiple pixels arranged in matrix. The first substrate has, in a transmissive display area provided in each of the pixels, a laminated structure containing a first transparent electrode, a first insulating film, a second transparent electrode, a second insulating film, and a third transparent electrode which are laminated in this order. The first transparent electrode and the second transparent electrode are electrically insulated from each other and together form a first storage capacitor through the first insulating film, and the second transparent electrode and the third transparent electrode are electrically insulated from each other and together form a second storage capacitor through the second insulating film.

Abstract: A display device according to the disclosure includes: a first support that supports a display panel; a second support that supports the display panel; a connecting portion that connects the first support and the second support so that the display panel can be bent; a first member that is fixed to the first support and is more flexible than the display panel; a second member that is fixed to the second support and is more flexible than the display panel; a first adhesion layer that adheres the first member to at least a portion of a first surface opposite to a display surface of the display panel; and a second adhesion layer that adheres the second member to at least another portion of the first surface.

Abstract: The purpose of the present invention is to realize a flexible display device with a touch sensor that flexibility is maintained in a normal operation as a display; however, rigidity is added to the display device when the touch sensor is used. The representative structure of the invention is, a display device comprising: a touch sensor and a display panel, wherein a laminated body of a first actuator and a second actuator is adhered to the rear surface of the display panel, the first actuator itself can bend when voltage is applied, the second actuator itself can bend when voltage is applied.

Abstract: A lock-up device for a torque converter transmitting a torque from a front cover to a transmission-side member is disclosed. The lock-up device includes a clutch part, a piston, and a return mechanism. The piston is axially opposed to the front cover through the clutch part. The piston is axially movable and applies a pressing force to the clutch part whereby the clutch part is turned to an activated state. The return mechanism urges the piston away from the front cover. The return mechanism is disposed axially between the front cover and the piston while disposed radially inside the clutch part. The return mechanism includes first and second plates, and an elastic member. The first plate contacts the front cover. The second plate contacts the piston while axially opposed to the first plate. The elastic member is disposed between the first and second plates in a compressed state.

Abstract: The present invention realizes a bright image display by enhancing a numerical aperture of pixels. At least a portion of a pixel electrode is overlapped to a thin film transistor by way of a first insulation film, the pixel electrode is connected to an output electrode of the thin film transistor via a contact hole which is formed in the first insulation film, the counter electrode is arranged above the pixel electrode by way of a second insulation film in a state that the counter electrode is overlapped to the pixel electrode, the counter electrode is formed at a position avoiding the contact hole formed in the first insulation film as viewed in a plan view, and at least a portion of the counter electrode is overlapped to the thin film transistor.

Abstract: To form a sufficiently large storage capacitor, a liquid crystal display device includes a liquid crystal display panel having a first substrate, a second substrate, and a liquid crystal held between the first substrate and the second substrate, the liquid crystal display panel having multiple pixels arranged in matrix. The first substrate has, in a transmissive display area provided in each of the pixels, a laminated structure containing a first transparent electrode, a first insulating film, a second transparent electrode, a second insulating film, and a third transparent electrode which are laminated in this order. The first transparent electrode and the second transparent electrode are electrically insulated from each other and together form a first storage capacitor through the first insulating film, and the second transparent electrode and the third transparent electrode are electrically insulated from each other and together form a second storage capacitor through the second insulating film.

Abstract: A column for defining the interval between a TFT substrate and an opposed substrate is formed at a crossing point between a drain line and a scanning line. At the crossing point where the column is formed, the drain line is formed to have a wider width to prevent light leakage. Further, at the crossing point where the column is formed, the scanning line is formed to have a narrower width to prevent increase of capacitance between the drain line and the scanning line. The column is formed at a crossing point corresponding to a specific color, e.g., a blue pixel B, so that a difference in transmittance and in characteristic of thin film transistors due to formation of the column is initially compensated.

Abstract: A plurality of light emitting layers are divided into a plurality of groups in response to light emitting colors. Each of the plurality of groups includes a group corresponding to the plurality of light emitting layers. Transmitted light colors of a plurality of filter layers are respectively the same type of colors as the light emitting colors of the plurality of light emitting layers. Each of the plurality of light emitting layers includes a central area and a peripheral area having mutually different light emitting characteristics within a range corresponding to a plurality of contact areas. Each of the plurality of filter layers includes a filter opening at the center, and is provided at least obliquely upward in an outward direction of the peripheral area.

Abstract: A magnetization rotational element includes a ferromagnetic metal layer, and a spin-orbit torque wiring extending in a first direction intersecting a lamination direction of the ferromagnetic metal layer and having the ferromagnetic metal layer positioned on one surface thereof, in which a direction of spin injected from the spin-orbit torque wiring into the ferromagnetic metal layer intersects a magnetization direction of the ferromagnetic metal layer, and a damping constant of the ferromagnetic metal layer is larger than 0.01.

Abstract: A column for defining the interval between a TFT substrate and an opposed substrate is formed at a crossing point between a drain line and a scanning line. At the crossing point where the column is formed, the drain line is formed to have a wider width to prevent light leakage. Further, at the crossing point where the column is formed, the scanning line is formed to have a narrower width to prevent increase of capacitance between the drain line and the scanning line. The column is formed at a crossing point corresponding to a specific color, e.g., a blue pixel B, so that a difference in transmittance and in characteristic of thin film transistors due to formation of the column is initially compensated.

Abstract: A spin current assisted magnetoresistance effect device includes: a spin current assisted magnetoresistance effect element including a magnetoresistance effect element part and a spin-orbit torque wiring; and a controller electrically connected to the spin current assisted magnetoresistance effect element. In a portion in which the magnetoresistance effect element part and the spin-orbit torque wiring are bonded, an STT inversion current flowing through the magnetoresistance effect element part and an SOT inversion current flowing through the spin-orbit torque wiring merge or are divided, and the controller is configured to be capable of performing control for applying the STT inversion current to the spin current assisted magnetoresistance effect element at the same time as an application of the SOT inversion current or a time application of the SOT inversion current.

Abstract: Provided is a display device including a plurality of pixels and a touch sensor overlapping with the plurality of pixels, the touch sensor. The touch sensor possesses: a first wiring arranged in a first direction and including a plurality of first electrodes; and a second wiring arranged in a second direction intersecting the first direction and including a plurality of second electrodes. Each of the first electrodes and each of the second electrodes vary in width continuously or stepwise in the first direction and the second direction, respectively, and satisfy a certain relationship with respect to an area and a total length of sides thereof.

Abstract: A spin current magnetization rotational element includes: a first ferromagnetic metal layer having a variable magnetization direction; and a spin orbital torque wiring which is joined to the first ferromagnetic metal layer and extends in a direction crossing a direction perpendicular to a plane of the first ferromagnetic metal layer, wherein the spin orbital torque wiring is constituted of a non-magnetic material composed of elements of two or more kinds and a compositional proportion of the non-magnetic material has a non-uniform distribution between a first surface joined to the first ferromagnetic metal layer and a second surface located on a side opposite to the first surface.

Abstract: A spin current assisted magnetoresistance effect device includes: a spin current assisted magnetoresistance effect element including a magnetoresistance effect element part and a spin-orbit torque wiring; and a controller electrically connected to the spin current assisted magnetoresistance effect element. In a portion in which the magnetoresistance effect element part and the spin-orbit torque wiring are bonded, an STT inversion current flowing through the magnetoresistance effect element part and an SOT inversion current flowing through the spin-orbit torque wiring merge or are divided, and the controller is configured to be capable of performing control for applying the STT inversion current to the spin current assisted magnetoresistance effect element at the same time as an application of the SOT inversion current or a time application of the SOT inversion current.

Abstract: This spin current magnetization rotational element includes a second ferromagnetic metal layer 1 having a variable magnetization orientation, and spin-orbit torque wiring 2, which extends in a direction that intersects a direction perpendicular to the surface of the second ferromagnetic metal layer 1, and is connected to the second ferromagnetic metal layer 1, wherein the spin resistance of a connection portion of the spin-orbit torque wiring layer 2 that is connected to the second ferromagnetic metal layer 1 is larger than the spin resistance of the second ferromagnetic metal layer 1.

Abstract: A column for defining the interval between a TFT substrate and an opposed substrate is formed at a crossing point between a drain line and a scanning line. At the crossing point where the column is formed, the drain line is formed to have a wider width to prevent light leakage. Further, at the crossing point where the column is formed, the scanning line is formed to have a narrower width to prevent increase of capacitance between the drain line and the scanning line. The column is formed at a crossing point corresponding to a specific color, e.g., a blue pixel B, so that a difference in transmittance and in characteristic of thin film transistors due to formation of the column is initially compensated.

Abstract: A spin current assisted magnetoresistance effect device includes: a spin current assisted magnetoresistance effect element including a magnetoresistance effect element part and a spin-orbit torque wiring; and a controller electrically connected to the spin current assisted magnetoresistance effect element. In a portion in which the magnetoresistance effect element part and the spin-orbit torque wiring are bonded, an STT inversion current flowing through the magnetoresistance effect element part and an SOT inversion current flowing through the spin-orbit torque wiring merge or are divided, and the controller is configured to be capable of performing control for applying the STT inversion current to the spin current assisted magnetoresistance effect element at the same time as an application of the SOT inversion current or a time application of the SOT inversion current.