Abstract: A substrate processing apparatus 10 includes a holding table 20 for rotatably holding a wafer W, a nozzle 40 for supplying chemical solutions L1 and L2 to the wafer W, at least one light irradiation units G1 and G2, and a pot 30 placed in the outer radius of the holding table 20for collecting the processing solutions L1 and L2 that are scattered from the wafer W. The pot 30 also includes a cover 70 that can be moved in the direction of the axis of the holding table 20so that a plurality of chemical solution collecting chambers M1 and M2 are formed in the pot by changing the position of the cover 70.

Abstract: A substrate processing apparatus 10 includes a holding table 20 for rotatably holding a wafer W, a nozzle 40 for supplying chemical solutions L1 and L2 to the wafer W, at least one light irradiation units G1 and G2, and a pot 30 placed in the outer radius of the holding table 20 for collecting the processing solutions L1 and L2 that are scattered from the wafer W. The pot 30 also includes a cover 70 that can be moved in the direction of the axis of the holding table 20 so that a plurality of chemical solution collecting chambers M1 and M2 are formed in the pot by changing the position of the cover 70.

Abstract: An apparatus and method are disclosed that can process a substrate such as a wafer while keeping high cleanliness. The apparatus comprises a center port 100, which is stationarily arranged in the center and on the surface of which at least one blow-off outlet is provided for blowing off fluid, and a rotating housing portion 200 which is capable of rotating about the center port 100. The rotating housing portion 200 comprises a top plate 210 comprising a main surface S2 that opposes a wafer W, and a lower housing being connected to the top plate 210 and rotatably driven by a rotation-driving member. When the surface S1 comprising blow-off outlets 151a and 153a of the center port 100 is offset from the main surface S2 of the top plate 210 and fluid is blown off from the blow-off outlet 151a, the substrate W is contactlessly held above the main surface S2 of the top plate 210 and the surface S1 of the center port 100.

Abstract: A method for transferring semiconductor wafers can suppress the generation of native oxides or watermarks, or the like, in cleaning the semiconductor wafers. In the semiconductor wafer transfer method of the preferred embodiment, first and second process chambers, and a dry unit are vertically arranged in a housing. The preferred method includes transferring the wafer between these chambers and the dry unit by a first non-contact hold type of a transfer robot, transferring the wafer between the housing and a wafer cassette by a second non-contact hold type of a transfer robot, and feeding nitrogen gas into the housing from gas-feeding inlets.