Abstract: An electret condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electret film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract: A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane.

Abstract: An electret condenser microphone includes: a substrate 13 in which an opening 25 is formed; an electret condenser 50 connected to one face of the substrate 13 so as to close the opening 25 and having an acoustic hole 12 and a cavity 2; a drive circuit element 15 connected to the one face of the substrate 13; and a case 17 mounted over the substrate 13 so as to cover the electret condenser 50 and the drive circuit element 15. Electric contact is established at a joint part between the electret condenser 50 and the substrate 13. The acoustic hole 12 communicates with an external space through the opening 25. The cavity 2 and an internal region of the case 17 serve as a back air chamber for the electret condenser 50.

Abstract: A diaphragm structure for a MEMS device includes a through-hole formed so as to penetrate from an upper surface to a bottom surface of a substrate; and a vibrating electrode film formed on the upper surface of the substrate so as to cover the through-hole. An opening shape of the through-hole in the upper surface of the substrate is substantially hexagonal.

Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

Abstract: A MEMS device includes: a semiconductor substrate; a vibrating film formed on the semiconductor substrate with a restraining portion interposed between the vibrating film and the semiconductor substrate, and including a lower electrode, and a fixed film formed on the semiconductor substrate with a support portion interposed between the fixed film and the semiconductor substrate to cover the vibrating film, and including an upper electrode. A gap formed between the vibrating film and the fixed film opposed to each other forms an air gap. The restraining portion provides partial coupling between the semiconductor substrate and the vibrating film, and the vibrating film has a multilayer structure in which the lower electrode and a compressive stress inducing insulating film are laminated. The insulating film is located within the perimeter of the lower electrode.

Abstract: An electret condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electret film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

Abstract: An electric condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electric film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.

Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

Abstract: An electret condenser 2 includes a fixed electrode 6, a vibrating electrode 5, an electretized silicon dioxide film 7 formed between the electrodes, and silicon nitride films 8 and 9 formed so as to cover the silicon dioxide film 7. The silicon dioxide film 7 covered with the silicon nitride films 8 and 9 is formed on the vibrating electrode 5.

Abstract: A diaphragm structure for a MEMS device includes a through-hole formed so as to penetrate from an upper surface to a bottom surface of a substrate; and a vibrating electrode film formed on the upper surface of the substrate so as to cover the through-hole. An opening shape of the through-hole in the upper surface of the substrate is substantially hexagonal.

Abstract: A MEMS device includes a first insulating film formed on a semiconductor substrate, a vibrating film formed on the first insulating film, and a fixed film above the vibrating film with an air gap being interposed therebetween. The semiconductor substrate has a region containing N-type majority carriers. A concentration of N-type majority carriers in a portion of the semiconductor substrate where the semiconductor substrate contacts the first insulating film, is higher than a concentration of N-type majority carriers in the other portion of the semiconductor substrate.

Abstract: A MEMS device, including: a substrate having a first principal plane and a second principal plane opposite to the first principal plane; a through hole formed in the substrate; and a vibrating film formed over the first principal plane so as to cover the through hole. The first principal plane and the second principal plane are both a (110) crystal face; and the through hole has a substantially rhombic shape on the second principal plane.

Abstract: An air gap is formed between a first film having a first electrode film and a second film having a second electrode film. The first film has a stopper protruding toward the second film, and a recess communicating with the air gap is provided in the center of the stopper.

Abstract: A silicon nitride film (103) and a silicon nitride film (106) are formed to cover a charged silicon oxide film (105) serving as an electret.

Abstract: An electret condenser microphone includes: a substrate 13 in which an opening 25 is formed; an electret condenser 50 connected to one face of the substrate 13 so as to close the opening 25 and having an acoustic hole 12 and a cavity 2; a drive circuit element 15 connected to the one face of the substrate 13; and a case 17 mounted over the substrate 13 so as to cover the electret condenser 50 and the drive circuit element 15. Electric contact is established at a joint part between the electret condenser 50 and the substrate 13. The acoustic hole 12 communicates with an external space through the opening 25. The cavity 2 and an internal region of the case 17 serve as a back air chamber for the electret condenser 50.

Abstract: An electret condenser microphone includes: a substrate 13 in which an opening 25 is formed; an electret condenser 50 connected to one face of the substrate 13 so as to close the opening 25 and having an acoustic hole 12 and a cavity 2; a drive circuit element 15 connected to the one face of the substrate 13; and a case 17 mounted over the substrate 13 so as to cover the electret condenser 50 and the drive circuit element 15. Electric contact is established at a joint part between the electret condenser 50 and the substrate 13. The acoustic hole 12 communicates with an external space through the opening 25. The cavity 2 and an internal region of the case 17 serve as a back air chamber for the electret condenser 50.

Abstract: An electret condenser 2 includes a fixed electrode 6, a vibrating electrode 5, an electretized silicon oxide film 7 formed between the electrodes, and silicon nitride films 8 and 9 formed so as to cover the silicon oxide film 7. The silicon oxide film 7 covered with the silicon nitride films 8 and 9 is formed on the vibrating electrode 5.

Abstract: An electric condenser includes a fixed film 110 including a conductive film 118 to be an upper electrode, a vibrating film 112 including a lower electrode 104 and a silicon oxide film 105 to be an electric film, and a silicon oxide film 108 provided between the fixed film 110 and the vibrating film 112 and including an air gap 109. Respective parts of the fixed film 110 and the vibrating film 112 exposed in the air gap 109 are formed of silicon nitride films 106 and 114.