Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1-d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.

Abstract: A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1?d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 ?m and the plane spacing d2 at the X-ray penetration depth of 5 ?m is equal to or lower than 2.1×10?3.