Abstract: A substrate ozone processing device includes: a substrate-carrying/heating platform; above the platform, a gas supply head made up of a main head unit bored with platform-directed vent holes, gas conduits connected at their basal ends to the gas vent holes and separated by an interspace communicating with the gas-supply-head exterior, and a plurality of coplanar facing plates perforated, top-side-to-underside, with gas-discharging through-holes receiving the distal ends of the gas conduits, and with a latticework of gaps surrounding the discharging through-holes and communicating with the interspace; and a gas supply device for supplying ozone gas to the discharging through-holes. The facing plates are of small volume such that even should heat transfer between the plates and the substrate occur, thermal equilibrium between the plates and the substrate is reached in a short time, facilitating substrate temperature management.

Abstract: A cleaning method and an etching method for removing, by cleaning grease components and silicon micro pieces hard to remove, used for an apparatus and a carrier for manufacturing a semiconductor wafer or a semiconductor device. Matters to be removed are brought into contact with XeF2 gas produced by sublimation in a vacuum atmosphere to decompose and gasify the grease components and to remove silicon pieces by etching. If a trace of residual water is left in the vacuum atmosphere before the cleaning, the H2O reacts with XeF2, so that HF is produced. Therefore, for example, the native oxide SiO2 formed on the silicon pieces can be removed, and XeF2 can directly react with silicon, thereby enabling etching. The cleaning and etching speeds are extremely accelerated.

Abstract: A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF2 gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H2O reacts with XeF2, and HF is produced. For example, a native oxide SiO2 formed on the surface of silicon small particles can be removed, and XeF2 directly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.

Abstract: A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF2 gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H2O reacts with XeF2, and HF is produced. For example, a native oxide SiO2 formed on the surface of silicon small particles can be removed, and XeF2 directly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.

Abstract: The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semiconductor substrate or liquid crystal substrate. The ozone treatment apparatus 1 includes: a placement table 20 on which the substrate K is placed; a heating unit for heating the substrate K placed on the placement table 20; an opposed plate 40, disposed opposite the substrate K, for discharging the ozone gas through a discharge port 44 formed in a surface facing the substrate K, a gas feeding means 43 for feeding the ozone gas into the discharge port 44; a lifter 30 for moving the placement table 20 up and down; and a control unit 35 for controlling the operation of said lifter 30.

Abstract: An ozone processing device includes: a mounting base on which a substrate is mounted; a heating device to heat the substrate on the mounting base; a plurality of plates facing the substrate on the mounting base and equipped with discharge openings on the surface facing the substrate that discharge ozone gas in the direction of the substrate; and a gas supply device supplying ozone gas to the discharge openings of the plates to allow them to discharge gas. The plates are arranged in a co-planar manner with gaps formed between adjacent plates. The plates have a small volume so that even if there is heat transfer between the plates and the substrate, thermal equilibrium is achieved between the plates and the substrate in a short time, thus making temperature management of the substrate easy.

Abstract: A cleaning method and an etching method for removing, by cleaning grease components and silicon micro pieces hard to remove, used for an apparatus and a carrier for manufacturing a semiconductor wafer or a semiconductor device. Matters to be removed are brought into contact with XeF2 gas produced by sublimation in a vacuum atmosphere to decompose and gasify the grease components and to remove silicon pieces by etching. If a trace of residual water is left in the vacuum atmosphere before the cleaning, the H2O reacts with XeF2, so that HF is produced. Therefore, for example, the native oxide SiO2 formed on the silicon pieces can be removed, and XeF2 can directly react with silicon, thereby enabling etching. The cleaning and etching speeds are extremely accelerated.

Abstract: A cleaning method for removing fats, oils, and silicon small particles, which are conventionally difficult to remove, adhering to devices and carriers used to manufacture a semiconductor wafer or a semiconductor device. An etching method is also disclosed. XeF2 gas produced by sublimation is made to contact with an object to be cleaned in a vacuum atmosphere so as to decompose and gasify the oils and fats and to remove silicon small particles by etching. Prior to the cleaning, when a trace amount of residual water is left in the vacuum atmosphere, H2O reacts with XeF2, and HF is produced. For example, a native oxide SiO2 formed on the surface of silicon small particles can be removed, and XeF2 directly reacts with silicon, therby enabling etching. The cleaning etching rates are extremely high.

Abstract: The invention concerns an ozone treatment method and an ozone treatment apparatus for performing a treatment such as the formation and reformation of an oxide film, the removal of a resist film by blowing an ozone gas onto a surface of a substrate such as a semiconductor substrate or liquid crystal substrate. The ozone treatment apparatus 1 comprises: a placement table 20 on which the substrate K is placed; a heating means for heating the substrate K placed on the placement table 20; an opposed plate 40, disposed opposite the substrate K, for discharging the ozone gas through a discharge port 44 formed in a surface facing the substrate K, a gas feeding means 43 for feeding the ozone gas into the discharge port 44; a lift means 30 for moving the placement table 20 up and down; and a control means 35 for controlling the operation of said lift means 30.