Abstract: A mirror device includes a mirror, an actuator tilting the mirror, a first hinge coupling the mirror to the actuator, a base, a second hinge coupling the mirror to the base, a movable comb electrode coupled to the mirror, and a fixed comb electrode fixed to the base. The actuator is controlled based on a capacitance between the movable comb electrode and the fixed comb electrode. The movable comb electrode is disposed on a portion of the mirror closer to the second hinge than to the first hinge.

Abstract: A portion of an SiO2 layer 240 on a peripheral portion 255 of an actuator body portion 251 is left on the surface of the actuator body portion 251 when it is etched so as to extend over the outside of the piezoelectric element 4. When the third resist mask 330 covering the actuator body portion 251 and the mirror portion 252 is formed and etching is performed, the third resist mask 330 has a first slit 331 and a second slit 332, the second slit 332 exposing a peripheral portion 256 of a mirror portion 252, and the first slits 331 exposing a peripheral portion 256 of the actuator body portion 251 and a portion of the SiO2 layer 240 on the actuator body portion 251, and having a width wider than the second slit 332.

Abstract: A mirror device 100 includes a mirror 131, an actuator 104 tilting the mirror 131, a first hinge 105 coupling the mirror 131 to the actuator 104, a base 102, a second hinge 106 coupling the mirror 131 to the base 102, a movable comb electrode 107 coupled to the mirror 131, and a fixed comb electrode 108 fixed to the base 102. The actuator 104 is controlled based on a capacitance between the movable comb electrode 107 and the fixed comb electrode 108. The movable comb electrode 107 is disposed on a portion of the mirror 131 closer to the second hinge 106 than to the first hinge 105.

Abstract: A portion of an SiO2 layer 240 on a peripheral portion 255 of an actuator body portion 251 is left on the surface of the actuator body portion 251 when it is etched so as to extend over the outside of the piezoelectric element 4. When the third resist mask 330 covering the actuator body portion 251 and the mirror portion 252 is formed and etching is performed, the third resist mask 330 has a first slit 331 and a second slit 332, the second slit 332 exposing a peripheral portion 256 of a mirror portion 252, and the first slits 331 exposing a peripheral portion 256 of the actuator body portion 251 and a portion of the SiO2 layer 240 on the actuator body portion 251, and having a width wider than the second slit 332.