Patents by Inventor Tokio Isogai

Tokio Isogai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4643913
    Abstract: A process for producing solar cells which comprises applying a composition for anti-reflection coating formation on one side of a silicon base plate having a p-n junction therein, printing an Ag paste for contact formation on predetermined areas of the coat, and heat-treating the resulting plate at a temperature of 400.degree. to 900.degree. C. to complete anti-reflection coating and a light-receiving side contact, the process being characterized in that the composition for anti-reflection coating formation contains as essential component, (a) at least one member selected from the metal-organic ligand complex compounds represented by the general formula M(OR.sub.1).sub.n (L).sub.a-n wherein M is a metal selected from Zn, Al, Ga, In, Ti, Zr, Sn, V, Nb, Ta, Mo, and W; R.sub.1 is a C.sub.1 -C.sub.18 alkyl group; L is an organic ligand which forms an non-hydrolyzable bond with the metal ion; a is the valency of the metal M; and n is an integer satisfying 1.ltoreq.
    Type: Grant
    Filed: December 28, 1984
    Date of Patent: February 17, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Masaaki Okunaka, Mitsuo Nakatani, Haruhiko Matsuyama, Hitoshi Yokono, Tokio Isogai, Tadashi Saitoh, Kunihiro Matsukuma, Sumiyuki Midorikawa, Satoru Suzuki
  • Patent number: 4638443
    Abstract: A gas detecting apparatus incorporates a number of gas detecting elements which react with a variety of gases and exhibit gas sensitivities differing from one another in dependence on the gas species. The detection patterns obtained by quantitizing the detection outputs of the gas detecting elements are compared with a plurality of standard patterns prepared previously for assumed combinations of gas species and concentrations thereof. On the basis of the standard pattern which is same or most similar to the detection pattern, the gas species is identified.
    Type: Grant
    Filed: February 21, 1984
    Date of Patent: January 20, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Masayoshi Kaneyasu, Hideo Arima, Mitsuko Ito, Shoichi Iwanaga, Nobuo Sato, Takanobu Noro, Akira Ikagami, Tokio Isogai
  • Patent number: 4586143
    Abstract: A gas detecting apparatus is disclosed in which detection outputs from a plurality of semiconductor gas detecting elements different in gas detection characteristic from each other and previously-obtained characteristic values of the semiconductor gas detecting elements for a mixed gas are subjected to operational processing to detect one or more specified constituent gases contained in the mixed gas, and in which when the specified constituent gas is detected, the detection information is announced by some means, and also the supply of gas is stopped or a supply gas is diluted.
    Type: Grant
    Filed: January 28, 1983
    Date of Patent: April 29, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Masayoshi Kaneyasu, Takanobu Noro, Hideo Arima, Mitsuko Ito, Shoichi Iwanaga, Nobuo Sato, Akira Ikegami, Tokio Isogai
  • Patent number: 4565767
    Abstract: A light-sensitive polymer composition comprising a poly(amic acid), a special bisazide compound and an amine compound can give a film which has high sensitivity and in which portions exposed to light are not easily released by a developing solution at the time of development.
    Type: Grant
    Filed: April 24, 1984
    Date of Patent: January 21, 1986
    Assignees: Hitachi, Ltd, Hitachi Chemical Company, Ltd.
    Inventors: Fumio Kataoka, Fusaji Shoji, Isao Obara, Issei Takemoto, Hitoshi Yokono, Tokio Isogai, Mitsumasa Kojima
  • Patent number: 4513132
    Abstract: Heat-resistant silicone block polymer with a good flexibility obtained by reaction of an organosilsesquioxane with a silicone compound or organosiloxane in the presence of a basic catalyst in an organic solvent.
    Type: Grant
    Filed: March 31, 1983
    Date of Patent: April 23, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Fusaji Shoji, Issei Takemoto, Fumio Kataoka, Hitoshi Yokono, Tokio Isogai
  • Patent number: 4486232
    Abstract: An electrode material for semi-conductor device such as solar cells comprises Ag powders, at least one metal of zirconium, hafnium, vanadium, niobium, and tantalum, an organic binder, and an organic solvent, and, if necessary, glass, Pd powders and Pt powders.The electrodes are prepared from the electrode material by printing, drying and firing at a low temperature and have a low contact resistance without any junction breakage or increase in leak current.
    Type: Grant
    Filed: August 17, 1983
    Date of Patent: December 4, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Mitsuo Nakatani, Haruhiko Matsuyama, Masaaki Okunaka, Hitoshi Yokono, Tokio Isogai, Tadashi Saitoh, Sumiyuki Midorikawa
  • Patent number: 4457161
    Abstract: A gas detection device and a method for detecting a gas where gas information including concentrations of gas components in a mixed gas, concentration, presence of specific gas components and the like is detected by measuring, e.g., the output voltages of a plurality of gas sensors having different gas selectivities. The gas selectivities, as a characteristic constant of the specific gas sensor, was previously determined. The measured output voltages and gas selectivities are then used for solving plural simultaneous equations for gas concentrations.
    Type: Grant
    Filed: April 7, 1981
    Date of Patent: July 3, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Shoichi Iwanaga, Nobuo Sato, Akira Ikegami, Tokio Isogai, Takanobu Noro, Hideo Arima
  • Patent number: 4451551
    Abstract: A light- or radiation-sensitive polymer composition comprising (a) a poly(amic acid) having as a major component a repeating unit of the formula: ##STR1## (b) one or more light- or radiation-sensitive compounds having an amino group and an aromatic azide group or aromatic sulfonylazide group in one molecule, and if necessary (c) one or more photosensitizers and/or amine compounds having at least one unsaturated bonding, and/or (d) one or more compounds having at least two unsaturated bonding in one molecule, is highly sensitive to light and radiation and can give a precise relief pattern on a substrate. Further, a finally obtained polyimide film is excellent in heat resistance.
    Type: Grant
    Filed: December 17, 1981
    Date of Patent: May 29, 1984
    Assignees: Hitachi, Ltd., Hitachi Chemical Company
    Inventors: Fumio Kataoka, Fusaji Shoji, Isao Obara, Hitoshi Yokono, Tokio Isogai, Mitumasa Kojima
  • Patent number: 4419506
    Abstract: A radiation sensitive polymer material having (a) one or more repeating units of the formula: ##STR1## wherein R is an alkyl group, a halogen atom, a hydrogen atom or a dimethylamino group, and (b) an addition polymerizable repeating unit derived from a compound having a CH.sub.2 .dbd.C< group in the molecule, can give a positive type resist having excellent resistance to dry etching and being highly sensitive to radiation.
    Type: Grant
    Filed: March 18, 1982
    Date of Patent: December 6, 1983
    Assignee: Hitachi, Ltd.
    Inventors: Kazuo Nate, Toshio Kobayashi, Tokio Isogai
  • Patent number: 4386387
    Abstract: A porcelain composition comprising Pb(Fe.sub.2/3 W.sub.1/3)O.sub.3, PbTiO.sub.3 and Pb(Yb.sub.1/2 Nb.sub.1/2)O.sub.3 preferably within the range as defined by closed area of A-B-C-D-A in the accompanying triangular diagram can give a sintered product by sintering at a temperature as low as 1000.degree. C. or lower. The resulting sintered product has a high relative dielectric constant and a small dielectric loss tangent.
    Type: Grant
    Filed: November 16, 1981
    Date of Patent: May 31, 1983
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Hirayoshi Tanei, Akira Ikegami, Hideo Arima, Tokio Isogai, Kiyoshi Kawabata
  • Patent number: 4369208
    Abstract: A transparent electroconductive film of lower resistance with a smaller content of remaining organic components and less pinholes than those of the conventional transparent electroconductive film is produced by applying a coating solution selected from (a) a coating solution comprising an inorganic indium compound free from a photosensitive group in the molecule or an inorganic tin compound free from a photosensitive group in the molecule, an organic ligand, and an organic solvent, (b) a coating solution comprising an organic indium compound free from a photosensitive group in the molecule, or an organic tin compound free from a photosensitive group in the molecule, and an organic solvent, and (c) the coating solution (a) or (b) further containing a dopant to the surface of a substrate, thereby forming a film thereon, and then irradiating the substrate with radiation capable of exciting organic groups, for example, ultraviolet rays in a state where the substrate is kept at a high temperature (100.degree.-600.
    Type: Grant
    Filed: December 11, 1980
    Date of Patent: January 18, 1983
    Assignees: Hitachi, Ltd., Hitachi Chemical Company, Ltd.
    Inventors: Masaaki Okunaka, Ryoichi Sudo, Hitoshi Yokono, Tokio Isogai, Mitsuo Yamazaki
  • Patent number: 4347304
    Abstract: Metallic images of uniform quality can be formed on substrates having through-holes by a process using a positive type resist characterized by using as a coating solution for the substrate a solution of a photosensitive material of (a) at least one organic compound having at least one linkage of --M--M--M ).sub.n (M=Si, Ge or Sn; n=0, 1 or more) in the molecule or (b) a mixture of at least one organic compound (a) mentioned above and at least one photosensitizer, dissolved in a solvent such as a halogenated hydrocarbon, an aromatic hydrocarbon, a heterocyclic compound, or a mixture thereof, followed by irradiation with an actinic light through a photomask and electroless plating.
    Type: Grant
    Filed: June 24, 1981
    Date of Patent: August 31, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Hideki Sakurai, Mitsuo Nakatani, Hitoshi Oka, Hitoshi Yokono, Tokio Isogai
  • Patent number: 4347166
    Abstract: A thermistor composition comprises oxide powder of at least two of Mn, Co, and Ni, and an oxide powder of Ru as a noble metal.
    Type: Grant
    Filed: February 22, 1979
    Date of Patent: August 31, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Hiromi Tosaki, Hideo Arima, Teruo Mozume, Akira Ikegami, Tokio Isogai, Ichiro Tsubokawa
  • Patent number: 4324629
    Abstract: During recyclic use of a chemical copper plating solution, counter anions to copper ions, anions formed by oxidation of a reducing agent, and carbon dioxide by absorption of carbon dioxide from air, which all have an inhibiting effect upon the plating, and also sodium ions having no inhibiting effect are accumulated in the plating solution.These accumulated ions can be removed by electrodialysis. Particularly, regeneration can be satisfactorily regenerated by adjusting the pH of used chemical plating solution to 2-11 before the electrodialysis, and using a selectively monovalent anion permeable membrane as an anion exchange membrane at the electrodialysis.
    Type: Grant
    Filed: June 17, 1980
    Date of Patent: April 13, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Hitoshi Oka, Hiroshi Kikuchi, Hitoshi Yokono, Haruo Suzuki, Toyofusa Yoshimura, Akira Matsuo, Osamu Miyazawa, Isamu Tanaka, Tokio Isogai
  • Patent number: 4321319
    Abstract: There is described photosensitive polymer composition and a polyimide film-coated material made by applying the composition to a support, irradiating with ultraviolet and thereafter heating. The photosensitive polymer composition is prepared by adding a sensitizer to a photosensitive polyamide acid intermediate solution which is obtained by reacting in an inert solvent a first compound comprising 100 to 5% by weight of a photosensitive group-containing diamine and 0 to 95% by weight of a diamine having no photosensitive group, with a second compound comprising at least one compound selected from a tetracarboxylic acid dianhydride and a tricarboxylic acid anhydride monohalide.
    Type: Grant
    Filed: May 22, 1980
    Date of Patent: March 23, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Fusaji Shoji, Issei Takemoto, Hitoshi Yokono, Tokio Isogai
  • Patent number: 4310563
    Abstract: The pH of a chemical copper plating solution is exactly measured for a prolonged time by utilizing a copper oxide prepared by etching metallic copper in an 0.1-1 N inorganic acid then oxidizing the etched metallic copper in an aqueous 0.1-1 N alkali metal hydroxide solution as a main electrode for pH measurement or reducing agent concentration measurement in terms of pH.A combination of the pH measurement with well known procedures for measuring concentrations of cupric ions and a complexing agent exactly measures the pH and the concentrations of a reducing agent, cupric ions and a complexing agent for a continuation of longer time than the conventional procedures.
    Type: Grant
    Filed: October 15, 1980
    Date of Patent: January 12, 1982
    Assignee: Hitachi, Ltd.
    Inventors: Hitoshi Oka, Kenji Nakamura, Hitoshi Yokono, Tokio Isogai, Akira Matsuo, Osamu Miyazawa, Isamu Tanaka
  • Patent number: 4308571
    Abstract: A low temperature-sinterable dielectric composition is provided, whose sintered composition when prepared by firing a uniform mixture consisting of lead ferrotungstate, lead titanate and manganese dioxide at a temperature of not higher than 1,000.degree. C. has the general formula A.Pb(Fe.sub.2/3 W.sub.1/3).sub.1-x Ti.sub.x O.sub.3 +B.MnO.sub.2, wherein 0.005.ltoreq..times..ltoreq.0.65, A=0.95-0.9995, and B=0.0005-0.05, a relative dielectric constant of at least 2,000 at 25.degree. C., a dissipation factor (tan .delta.) of not more than 5% at 25.degree. C., and a specific resistance of at least 10.sup.9 .OMEGA..cm at 25.degree. C. Also provided is a thick film capacitor having a dielectric layer prepared from said composition.
    Type: Grant
    Filed: March 26, 1980
    Date of Patent: December 29, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Hirayoshi Tanei, Akira Ikegami, Noriyuki Taguchi, Katsuo Abe, Hiroshi Ohtsu, Tokio Isogai
  • Patent number: 4303443
    Abstract: When an amine compound having at least two polyolefin glycol chains in one molecule is used as a stabilizer, and an alkylene diamine compound, at least one hydrogen atom in the respective amino groups thereof being substituted by CH.sub.2 COOX (wherein X is H or Na) and another hydrogen atom in the respective amino group thereof being substituted by CH.sub.
    Type: Grant
    Filed: June 13, 1980
    Date of Patent: December 1, 1981
    Assignee: Hitachi, Ltd.
    Inventors: Osamu Miyazawa, Hitoshi Oka, Isamu Tanaka, Akira Matsuo, Hitoshi Yokono, Nobuo Nakagawa, Tokio Isogai
  • Patent number: 4303554
    Abstract: Transparent electroconductive film having no cracks and whitening is obtained by coating on a substrate a composition comprising an inorganic indium salt, a polybasic carboxylic acid or polybasic carboxylic acid anhydride and a solvent, and calcining the coated composition at a temperature of 300.degree. to 700.degree. C. under an atmosphere containing oxygen. When a tin compound is added to the composition, sheet resistance of the transparent electroconductive film can be adjusted favorably.
    Type: Grant
    Filed: June 19, 1980
    Date of Patent: December 1, 1981
    Assignees: Hitachi, Ltd., Hitachi Chemical Company, Ltd.
    Inventors: Ryoichi Sudo, Masaaki Okunaka, Hitoshi Yokono, Tokio Isogai, Mitsuo Yamazaki
  • Patent number: 4220547
    Abstract: A dielectric paste for a thick film capacitor comprises barium titanate powder, glass frit, magnetite powder, an organic vehicle and a surface-active agent. A dielectric constant higher than 1,100 is obtained by firing at a temperature of 900.degree. C. or lower.
    Type: Grant
    Filed: December 19, 1978
    Date of Patent: September 2, 1980
    Assignee: Hitachi, Ltd.
    Inventors: Katsuo Abe, Noriyuki Taguchi, Nobuyuki Sugishita, Tokio Isogai