Patents by Inventor Tokio Ohkoshi

Tokio Ohkoshi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4585706
    Abstract: A semi-conductor device comprising sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound.
    Type: Grant
    Filed: August 26, 1985
    Date of Patent: April 29, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Yukio Takeda, Satoru Ogihara, Mitsuru Ura, Kousuke Nakamura, Tadamichi Asai, Tokio Ohkoshi, Yasuo Matsushita, Kunihiro Maeda
  • Patent number: 4571610
    Abstract: Disclosed are semiconductor devices in which an electrical insulating substrate is made of a sintered silicon carbide body having thermal conductivity of at least 0.4 cal/cm.multidot.sec.multidot..degree.C. at 25.degree. C., electrical resistivity of at least 10.sup.7 ohm.multidot.cm at 25.degree. C. and coefficient of thermal expansion of 3.3.about.4.times.10.sup.-6 /.degree.C. at 25.degree. C. to 300.degree. C.
    Type: Grant
    Filed: December 16, 1982
    Date of Patent: February 18, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Yasuo Matsushita, Yukio Takeda, Kousuke Nakamura, Tokio Ohkoshi
  • Patent number: 4540673
    Abstract: Sintered aluminum nitride having a high thermal conductivity, which comprises at least 65% by weight of aluminum nitride, and at least one of beryllium, a beryllium compound, lithium and a lithium compound, and a semi-conductor device using the same.
    Type: Grant
    Filed: April 29, 1982
    Date of Patent: September 10, 1985
    Assignee: Hitachi, Ltd.
    Inventors: Yukio Takeda, Satoru Ogihara, Mitsuru Ura, Kousuke Nakamura, Tadamichi Asai, Tokio Ohkoshi, Yasuo Matsushita, Kunihiro Maeda