Abstract: A method of producing a resist pattern includes the steps of: forming a resist layer on the semiconductor substrate; performing a first exposure process on the resist layer; performing a first developing process for developing the resist layer to form a first resist pattern having an excess region; performing a first cleaning process; performing a second exposure process on the first resist pattern; performing a second developing process on the first resist pattern to remove the excess region from the first resist pattern so that a second resist pattern corresponding to the specific resist pattern is formed; and performing a second cleaning process.

Abstract: There is provided a post exposure baking apparatus that can effectively restrain the fluctuation of the size of pattern between wafers in a baking process for continuously processing a plurality of wafers as a batch sequence and a control method thereof. A baking time offset amount is set for each order number processing each wafer in the batch sequence, and a baking time of the wafer is corrected in accordance with the baking time offset amount corresponding to the processing order number in the baking process of the wafer.

Abstract: A coating method for a coating liquid includes preparing a coating surface which has a plurality of regions that are to be coated with said coating liquid; providing a plurality of storage chambers under atmospheric pressure in which said coating liquid is stored in respective amounts that enable the coating surfaces of said corresponding regions being coated to be coated to substantially the same coating thickness; disposing said corresponding regions being coated on the undersides of said storage chambers; and applying said coating liquid on the coating surfaces of said regions being coated by pushing said coating liquid stored in said storage chambers by said atmospheric pressure.

Abstract: A coating method for a coating liquid comprising the steps of: preparing a coating surface which has a plurality of regions that are to be coated with said coating liquid; providing a plurality of storage chambers under atmospheric pressure in which said coating liquid is stored in respective amounts that enable the coating surfaces of said corresponding regions being coated to be coated to substantially the same coating thickness; disposing said corresponding regions being coated on the undersides of said storage chambers; and applying said coating liquid on the coating surfaces of said regions being coated by pushing said coating liquid stored in said storage chambers by said atmospheric pressure.