Patents by Inventor Tokuhisa OOIWA

Tokuhisa OOIWA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Plasma processing apparatus and plasma processing method
    Patent number: 10111313
    Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.
    Type: Grant
    Filed: March 19, 2013
    Date of Patent: October 23, 2018
    Assignee: SHIBAURA MECHATRONICS CORPORATION
    Inventors: Takeharu Motokawa, Tokuhisa Ooiwa, Kensuke Demura, Tomoaki Yoshimori, Makoto Karyu, Yoshihisa Kase, Hidehito Azumano
  • PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
    Publication number: 20130256270
    Abstract: According to one embodiment, a plasma processing apparatus includes: a processing chamber; a decompression section configured to decompress inside of the processing chamber; a member including a control section to be inserted into a depression provided on mounting side of a workpiece, the control section being configured to thereby control at least one of in-plane distribution of capacitance of a region including the workpiece and in-plane distribution of temperature of the workpiece; a mounting section provided inside the processing chamber; a plasma generating section configured to supply electromagnetic energy to a region for generating a plasma for performing plasma processing on the workpiece; and a gas supply section configured to supply a process gas to the region for generating a plasma. The control section performs control so that at least one of the in-plane distribution of capacitance and the in-plane distribution of temperature is made uniform.
    Type: Application
    Filed: March 19, 2013
    Publication date: October 3, 2013
    Applicants: KABUSHIKI KAISHA TOSHIBA, SHIBAURA MECHATRONICS CORPORATION
    Inventors: Takeharu MOTOKAWA, Tokuhisa OOIWA, Kensuke DEMURA, Tomoaki YOSHIMORI, Makoto KARYU, Yoshihisa KASE, Hidehito AZUMANO