Abstract: In order to improve efficiency for converting electromagnetic energy into heat energy, an electromagnetic wave detector detecting an electromagnetic wave having a specific wavelength includes a substrate in which a read-out circuit is formed; a temperature detecting portion with a space from the substrate and which includes a bolometer thin film and a first antenna wire; a supporting portion which supports the temperature detecting portion with a space from the substrate and which includes electrode wires connected to the read-out circuit and to the bolometer thin film; and a reflecting portion which is provided to the substrate and which reflects the electromagnetic wave penetrating the temperature detecting portion toward the temperature detecting portion.

Abstract: In order to improve efficiency for converting electromagnetic energy into heat energy, an electromagnetic wave detector detecting an electromagnetic wave having a specific wavelength includes a substrate in which a read-out circuit is formed; a temperature detecting portion with a space from the substrate and which includes a bolometer thin film and a first antenna wire; a supporting portion which supports the temperature detecting portion with a space from the substrate and which includes electrode wires connected to the read-out circuit and to the bolometer thin film; and a reflecting portion which is provided to the substrate and which reflects the electromagnetic wave penetrating the temperature detecting portion toward the temperature detecting portion.

Abstract: An infrared sensor package includes a housing member, which includes an upper-surface section provided with a transmission member which transmits infrared radiation and a lower-surface section and whose inner space is vacuum-sealed, a plate-like heater member which is disposed within the inner space of the housing member and generates heat, an infrared detection element which is fixed onto the heater member and detects the infrared radiation which is transmitted by the transmission member, and a heat-insulating member which has a low thermal conductivity and a smaller cross-sectional area than that of the heater member, and supports the heater member while being fixed onto the lower-surface section.

Abstract: An infrared sensor package includes a housing member, which includes an upper-surface section provided with a transmission member which transmits infrared radiation and a lower-surface section and whose inner space is vacuum-sealed, a plate-like heater member which is disposed within the inner space of the housing member and generates heat, an infrared detection element which is fixed onto the heater member and detects the infrared radiation which is transmitted by the transmission member, and a heat-insulating member which has a low thermal conductivity and a smaller cross-sectional area than that of the heater member, and supports the heater member while being fixed onto the lower-surface section.

Abstract: In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer.

Abstract: In a semiconductor integrated circuit device, a logic circuit section is provided at the top surface of a P-type silicon substrate and a multi-level wiring layer. The device is further provided with a temperature sensor section in which a first temperature monitor member of vanadium oxide is provided above the multi-level wiring layer. A second temperature monitor member of Ti is provided at a lowermost layer of the multi-level wiring layer. The first and second temperature monitor members are connected in series between a ground potential wire and a power-source potential wire, with an output terminal connected to the node of both members. The temperature coefficient of the electric resistivity of the first temperature monitor member is negative, while that of the second temperature monitor member is positive.

Abstract: A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is patterned. Then, the resist pattern is removed using a stripping solution or oxygen plasma ashing. Next, with the patterned silicon nitride film used as a mask, the silicon oxide film and the vanadium oxide film are etched to form a resistor film of vanadium oxide.

Abstract: An infrared absorption film (first through third infrared absorption films) that constitutes a photoreceptor of a thermal-type infrared detection element comprises a laminate film in which a film composed of a novel SiCO material having high absorption on the short-wavelength end (approximately 8 to 10 ?m) of the waveband (atmospheric window) from 8 to 14 ?m is combined with a film composed of SiO, SiN, SiC, SiON, SiCN, or another material having high absorption on the long-wavelength end (approximately 10 to 14 ?m) of the abovementioned waveband. Infrared rays on the short-wavelength end that could not be effectively utilized by the conventional thermal infrared detection element can thereby be absorbed by the SiCO membrane, infrared rays throughout the abovementioned waveband can be effectively utilized, and the sensitivity of the thermal infrared detection element can be enhanced.

Abstract: In a semiconductor integrated circuit device, a sheet-like temperature monitor member of vanadium oxide is provided, whose one end is connected to one via while the other end is connected to another via. A sheet-like thermal conducting layer of aluminum is provided below the temperature monitor member. A region equal to or greater than a half of the entire temperature monitor member overlies the thermal conducting layer in a plan view.

Abstract: In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An insulating layer is provided in such a way as to cover the multi-layer wiring layer and the pads, second vias are so formed as to reach the pads. Vanadium oxide is buried in the second vias by reactive sputtering, and a temperature monitor part of vanadium oxide is provided in such a way as to connect the second vias each other. Accordingly, the temperature monitor part is connected between the two wires.

Abstract: An infrared absorption film (first through third infrared absorption films) that constitutes a photoreceptor of a thermal-type infrared detection element comprises a laminate film in which a film composed of a novel SiCO material having high absorption on the short-wavelength end (approximately 8 to 10 ?m) of the waveband (atmospheric window) from 8 to 14 ?m is combined with a film composed of SiO, SiN, SiC, SiON, SiCN, or another material having high absorption on the long-wavelength end (approximately 10 to 14 ?m) of the abovementioned waveband. Infrared rays on the short-wavelength end that could not be effectively utilized by the conventional thermal infrared detection element can thereby be absorbed by the SiCO membrane, infrared rays throughout the abovementioned waveband can be effectively utilized, and the sensitivity of the thermal infrared detection element can be enhanced.

Abstract: A convex pattern in which a plurality of substantially congruent projections composed of an infrared absorbing material are arranged at a substantially constant pitch is formed on the side of a photoreceptor that is irradiated with infrared rays, or a concave pattern in which a plurality of substantially congruent holes are arranged at a substantially constant pitch is formed in an infrared absorption film disposed on the side irradiated with infrared rays, and the infrared rays incident on the photoreceptor are dispersed by the convex pattern or concave pattern. By this configuration, reflection of infrared rays is minimized, the absorption efficiency of infrared rays is increased, and the sensitivity of the thermal-type infrared detection element is enhanced. This convex pattern can be formed using a common semiconductor manufacturing device, and has excellent adhesion to the immediately underlying infrared absorption film.

Abstract: In a semiconductor integrated circuit device, a logic circuit section is provided at the top surface of a P-type silicon substrate and a multi-level wiring layer. The device is further provided with a temperature sensor section in which a first temperature monitor member of vanadium oxide is provided above the multi-level wiring layer. A second temperature monitor member of Ti is provided at a lowermost layer of the multi-level wiring layer. The first and second temperature monitor members are connected in series between a ground potential wire and a power-source potential wire, with an output terminal connected to the node of both members. The temperature coefficient of the electric resistivity of the first temperature monitor member is negative, while that of the second temperature monitor member is positive.

Abstract: A vanadium oxide film is formed on an interlayer insulating layer, and a silicon oxide film and a silicon nitride film are formed on the vanadium oxide film in this order. With a resist pattern used as a mask, the silicon nitride film is patterned. Then, the resist pattern is removed using a stripping solution or oxygen plasma ashing. Next, with the patterned silicon nitride film used as a mask, the silicon oxide film and the vanadium oxide film are etched to form a resistor film of vanadium oxide.

Abstract: In a semiconductor integrated circuit device, a sheet-like temperature monitor member of vanadium oxide is provided, whose one end is connected to one via while the other end is connected to another via. A sheet-like thermal conducting layer of aluminum is provided below the temperature monitor member. A region equal to or greater than a half of the entire temperature monitor member overlies the thermal conducting layer in a plan view.

Abstract: In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer.

Abstract: In a temperature sensor section of a semiconductor integrated circuit device, first vias of tungsten are formed at the topmost layer of a multi-layer wiring layer and pads of titanium are provided on regions of the multi-layer wiring layer which covers the vias. An insulating layer is provided in such a way as to cover the multi-layer wiring layer and the pads, second vias are so formed as to reach the pads. Vanadium oxide is buried in the second vias by reactive sputtering, and a temperature monitor part of vanadium oxide is provided in such a way as to connect the second vias each other. Accordingly, the temperature monitor part is connected between the two wires.

Abstract: Crystal phase V2O3 with x=1.5 in VOx is prepared. Such a lower specific resistance than a desired one as a starting film quality is modified to the final desired specific resistance by heating under an oxidizing atmosphere. A protective film for a bolometer material is formed by physical vapor deposition.

Abstract: A metal film made of titanium is formed on a surface of a wafer. Then, the metal film is subjected to a patterning process to selectively remove undesired portions to form a metal film on an outer area of the wafer and a lattice-patterned metal film on a pattern area of the wafer. The lattice-patterned metal film is formed on an area corresponding to scribe lines of devices to be arranged in a matrix on the wafer. Then, the metal films are connected to a ground. Subsequently, a vanadium oxide film is formed on the wafer using a sputtering process. Therefore, the vanadium oxide film is prevented from becoming charged at the time of deposition thereof on the wafer to suppress increasing of self bias potential and attain uniformity in resistance value of the vanadium oxide film.

Abstract: A metal film made of titanium is formed on a surface of a wafer. Then, the metal film is subjected to a patterning process to selectively remove undesired portions to form a metal film on an outer area of the wafer and a lattice-patterned metal film on a pattern area of the wafer. The lattice-patterned metal film is formed on an area corresponding to scribe lines of devices to be arranged in a matrix on the wafer. Then, the metal films are connected to a ground. Subsequently, a vanadium oxide film is formed on the wafer using a sputtering process. Therefore, the vanadium oxide film is prevented from becoming charged at the time of deposition thereof on the wafer to suppress increasing of self bias potential and attain uniformity in resistance value of the vanadium oxide film.