Abstract: A method for carrying a semiconductor device includes: (a) providing semiconductor devices each having a main surface, a back surface, and a plurality of external terminals; (b) providing a tray having a front surface, a rear surface, an electronic tag imbedded in the tray, first concaved portions formed on the front surface, second concaved portions formed on the rear surface, the electronic tag constituted by a non-contact recognition type chip having a memory circuit in which recognizable information is stored, a depth of the first concaved portion is deeper than a depth of the second concaved portion; (c) housing the semiconductor devices into the first concaved portions respectively in such a manner that the back surface of the semiconductor device being oppose to a bottom of the first concaved portion; and (d) carrying the tray with the semiconductor devices.

Abstract: A method for carrying a semiconductor device includes: (a) providing semiconductor devices each having a main surface, a back surface, and a plurality of external terminals; (b) providing a tray having a front surface, a rear surface, an electronic tag imbedded in the tray, first concaved portions formed on the front surface, second concaved portions formed on the rear surface, the electronic tag constituted by a non-contact recognition type chip having a memory circuit in which recognizable information is stored, a depth of the first concaved portion is deeper than a depth of the second concaved portion; (c) housing the semiconductor devices into the first concaved portions respectively in such a manner that the back surface of the semiconductor device being oppose to a bottom of the first concaved portion; and (d) carrying the tray with the semiconductor devices.

Abstract: A surface mounting method for mounting semiconductor devices suppresses solder peeling defects which tried to occur during mounting. The method used for mounting semiconductor devices includes a process for preparing the semiconductor devices by obtaining multiple terminals by exposing a section of each of multiple leads protruding from a rear side of the plastic casing, and forming a layer of solder by solidifying a molten solder material; a process for supplying a solder paste material to multiple electrodes on a printed circuit board; and a process for melting the solder paste of the multiple electrodes and connecting each of the multiple terminals with the multiple electrodes.

Abstract: A method for manufacturing a semiconductor device includes the steps of providing a semiconductor device of a surface mounted type in which the main surface of a chip mounting portion connected to a semiconductor chip is formed so as to be smaller than the main surface of the semiconductor chip, accommodating the semiconductor device into a non-moistureproof, e.g., flammable, packing, and shipping the packed semiconductor device. The non-moistureproof packing may have a moisture permeability of T T?1 g/m2/24 hr. The method may also include providing a second semiconductor device of a surface-mounted type in which the main surface of a chip mounting portion connected to a semiconductor chip is formed so as to be larger than the main surface of the semiconductor chip, moistureproof-packing the second semiconductor device, and shipping and packed second semiconductor device.

Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.

Abstract: Clean accommodation and carrying of semiconductor devices are to be attained. A stack type tray is used which comprises a base portion 1d with plural pockets formed therein in a matrix shape and side walls formed along peripheral edges of the base portion. In the tray is buried an electronic tag which is constituted by a mu-chip having memory with non-contact recognizable information stored therein. Information pieces such as ID, manufacturer's name and product number of the tray, as well as product name, quantity and lot number of an object to be accommodated, are stored in the mu-chip of the electronic tag, and by accommodating a to-be-accommodated object in the tray equipped with the mu-chip and carrying it, the generation of dust can be prevented because paper label is not used.

Abstract: A method of manufacturing a semiconductor device is provided including preparing a lead frame having a plurality of leads, wherein the lead widths of the lead tips are smaller than the lead thickness of the tips. A plate is also prepared having a first portion and second portion on a main surface thereof, the second portion being located at the outer periphery of said first portion. A semiconductor chip having a semiconductor element and a plurality of electrodes is fastened to the first portion of the plate and the lead tips are fastened on the second portion of the plate. Bonding wires are then formed to electrically connect the lead tips and the electrodes of the semiconductor chip, and then the lead tips, the plate, the semiconductor chip and the bonding wires are sealed with a molding member.

Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.

Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≧1.2 t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.

Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads. In a molding member-sealed semiconductor device wherein the semiconductor chip is fixed to the heat radiation plate, the tip thickness t′ of the inner leads is made less than the thickness t of the other portions of the inner leads secured to the heat radiation plate.

Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.

Abstract: In a semiconductor device having a heat radiation plate, the tips of inner leads connected to a semiconductor chip have a lead width w and a lead thickness t, the width being less than the thickness. The inner leads are secured to the heat radiation plate. Fastening the inner leads to the heat radiation plate supports the latter and eliminates the need for suspending leads. A lead pitch p, the lead width w and lead thickness t of the inner lead tips connected to the semiconductor chip have the relations of w<t and p≦1.2t, with the inner leads secured to the heat radiation plate. The heat radiation plate has slits made therein to form radially shaped heat propagation paths between a semiconductor chip mounting area and the inner leads.