Patents by Inventor Tokuzo Sukegawa
Tokuzo Sukegawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 5169608Abstract: An inorganic article used as a container for holding a solution for crystal growth according to the present invention is provided by filling the pores of substrate having a porous inorganic structure with an inorganic material which has a melting point of 400.degree. to 900.degree. C. A liquid-phase epitaxy apparatus according to the present invention is comprised of a crucible made of the inorganic article or from a material selected from P-BN, quartz and sapphire and has an arrangement with less sliding contact. Thus, the dispersion of diffusive elements contained in a solution during the epitaxial growth is prevented. Accordingly, both the article and the apparatus of the present invention permit growth of crystals having high quality and less structural defects, thus contributing to the production of a semiconductor device made of materials having high vapor pressure.Type: GrantFiled: September 25, 1990Date of Patent: December 8, 1992Assignee: Mitsubishi Cable Industries, Ltd.Inventors: Shinichi Watabe, Hirotaka Ito, Tokuzo Sukegawa
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Patent number: 4944811Abstract: A material for a light emitting element most suited for a light emitting diode or laser diode which emits visible light of 550 to 650 nm band wavelength. The material provides an at least two-layered structure composed of a GaAs substrate and a Sn doped InGaP layer developed on the substrate without forming a gradient layer therebetween. The mixed crystal composition of the Sn doped InGaP layer as expressed by the molar fraction of GaP is 0.50 to 0.75.According to the method for developing mixed crystals of InGaP, GaP and InP are dissolved in Sn to make a solution. The solution is allowed to come in contact with a GaAs substrate so that InGaP crystals are developed directly on the GaAs substrate without a gradient layer for coordinating the lattice constant formed on the GaAs substrate.Type: GrantFiled: August 9, 1989Date of Patent: July 31, 1990Assignees: Tokuzo Sukegawa, Mitsubishi Cable Industries, Ltd.Inventors: Tokuzo Sukegawa, Kazuyuki Tadatomo
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Patent number: 4075654Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.Type: GrantFiled: October 26, 1976Date of Patent: February 21, 1978Assignee: Hamamatsu Terebi Kabushiki KaishaInventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
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Patent number: 4063276Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.Type: GrantFiled: October 26, 1976Date of Patent: December 13, 1977Assignee: Hamamatsu Terebi Kabushiki KaishaInventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
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Patent number: 4063269Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.Type: GrantFiled: October 26, 1976Date of Patent: December 13, 1977Assignee: Hamamatsu Terebi Kabushiki KaishaInventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
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Patent number: 4040079Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.Type: GrantFiled: September 20, 1976Date of Patent: August 2, 1977Assignee: Hamamatsu Terebi Kabushiki KaishaInventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
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Patent number: 4040080Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.Type: GrantFiled: September 20, 1976Date of Patent: August 2, 1977Assignee: Hamamatsu Terebi Kabushiki KaishaInventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
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Patent number: 4040074Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.Type: GrantFiled: September 20, 1976Date of Patent: August 2, 1977Assignee: Hamamatsu Terebi Kabushiki KaishaInventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
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Patent number: 4015284Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.Type: GrantFiled: January 9, 1976Date of Patent: March 29, 1977Assignee: Hamamatsu Terebi Kabushiki KaishaInventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
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Patent number: 4012760Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden bandwidth is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.Type: GrantFiled: March 22, 1976Date of Patent: March 15, 1977Assignee: Hamamatsu Terebi Kabushiki KaishaInventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
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Patent number: 3972060Abstract: A semiconductor cold emission device comprising at least two different semiconductors and a junction with a first region having n-type conductivity and a second region which is a p-type conductivity and an indirect transition type material whose effective forbidden band width is smaller than that of the first region and means for applying voltage to the junction to cause electrons injected from the first region to the second region to be emitted from the surface of the second region to the exterior.Type: GrantFiled: March 18, 1974Date of Patent: July 27, 1976Assignee: Hamamatsu Terebi Kabushiki KaishaInventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa
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Patent number: 3953880Abstract: Semiconductor photoelectron emission device comprising mixed crystals of two or more different semiconductors forming a heterojunction with direct transition type defining a first region in which may be excited by photoelectrons and an indirect transition type defining a second region whose forbidden band gap is wider than that of the first region and the surface of which is a photoelectron emission surface.Type: GrantFiled: March 27, 1974Date of Patent: April 27, 1976Assignee: Hamamatsu Terebi Kabushiki KaishaInventors: Katsuo Hara, Minoru Hagino, Tokuzo Sukegawa