Abstract: An object of the present invention is to provide a negative electrode for a lithium ion secondary battery, capable of obtaining a lithium ion secondary battery which is excellent in initial charge characteristics and is also excellent in charge/discharge cycle characteristics, and a method for producing the same, as well as a lithium ion secondary battery comprising the negative electrode for a lithium ion secondary battery. A negative electrode for a lithium ion secondary battery according to the present invention comprises a current collector layer, and a negative electrode active material layer composed of a tin structure, the tin structure includes a plurality of protrusions which protrude approximately perpendicularly to a main surface of the current collector layer, and a cross-sectional area of the tip portion parallel to the main surface of the current collector layer of the protrusion is smaller than that of the base end portion.

Abstract: A resist composition including: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound (C) represented by general formula (c1) shown below. In the formula, X represents a cyclic group of 3 to 30 carbon atoms which may have a substituent; R1 represents a divalent linking group; R2 represents an arylene group which may have a substituent, and each of R3 and R4 independently represents an aryl group which may have a substituent; R3 and R4 may be mutually bonded with the sulfur atom to form a ring; R5 represents a hydroxy group, a halogen atom, an alkyl group of 1 to 5 carbon atoms, an alkoxy group or a fluorinated alkyl group; p represents an integer of 0 to 2; and q represents an integer of 0 to 3.

Abstract: A resist composition including a base component which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, and an organic solvent component, the base component containing a resin component having a structural unit which generates acid, and the organic solvent component containing an organic solvent component including a compound represented by general formula (s-1) shown below in which X represents a single bond or an alkylene group of 1 to 3 carbon atoms; and n represents an integer of 0 to 3.

Abstract: A monosilane compound or bissilane compound of a specific structure having dimethylamino groups is contained in a surface treatment agent used in the hydrophobization treatment of substrate surfaces.

Abstract: A method of forming a contact hole pattern, including: a block copolymer layer forming step in which a layer containing a block copolymer having a plurality of blocks bonded is formed on a substrate having on a surface thereof a thin film with a hole pattern formed, so as to cover the thin film; a phase separation step in which the layer containing the block copolymer is subjected to phase separation; a selective removing step in which phase of at least one block of the plurality of blocks constituting the block copolymer is removed, wherein hole diameter of the hole pattern formed on the thin film is 0.8 to 3.1 times period of the block copolymer, and in the layer forming step, thickness between upper face of the thin film and surface of the layer containing the block copolymer is 70% or less of thickness of the thin film.

Abstract: A method of forming a pattern including applying a resist composition to a substrate to form a resist film, and then subjecting the resist film to exposure and development, thereby forming a first pattern containing a resist film; forming a SiO2 film on the surface of the first pattern and the substrate; subjecting the SiO2 to etching such that the SiO2 film remains only on a side wall portion of the first pattern; and removing the first pattern, thereby forming a second pattern containing the SiO2 film. Thr resist composition contains a base component that exhibits changed solubility in a developing solution under action of an acid, and an acid generator component that generates acid upon exposure, the base component containing a resin component containing a structural unit having an acid decomposable group which exhibits increased polarity by the action of acid and has no polycyclic group.

Abstract: A resist composition containing a base component (A) that exhibits changed solubility in a developing solution under action of acid, a photoreactive quencher (C), and an acid generator component (B) that generates acid upon exposure, and further containing an acid (G) having a pKa of 4 or less.

Abstract: A method for forming a fine pattern, including forming a resist film by applying, on a substrate, a resist composition containing a base material having a solubility, in a developer liquid including an organic solvent, that decreases according to an action of an acid, a compound which generates an acid upon irradiation, and an organic solvent; exposing the resist film; forming a resist pattern using the developer liquid; applying, on the resist pattern, a coating agent for pattern fining including a resin and an organic solvent; and heating the resist pattern on which a coating film is formed.

Abstract: A method of forming a resist pattern, including: step (1) in which a resist composition containing a base component (A) that exhibits increased solubility in an alkali developing solution and a compound represented by general formula (C1) is applied to a substrate to form a resist film, step (2) in which the resist film is subjected to exposure, step (3) in which baking is conducted after step (2), and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern; and the resist composition used in step (1): wherein R1 represents a group which forms an aromatic ring together with the two carbon atoms bonded to the R1 group; R2 represents a hydrogen atom or a hydrocarbon group; and R3 represents a hydrogen atom, a carboxy group or a hydrocarbon group of 1 to 15 carbon atoms.

Abstract: A resist composition including a base component (A) which exhibits changed solubility in a developing solution, and an acidic compound component (J) which is decomposed by exposure to exhibit decreased acidity, wherein the acidic compound component (J) contains a compound represented by formula (J1) [in the formula, R1 represents H, OH, halogen atom, alkoxy group, hydrocarbon group or nitro group; m represents 0-4; n represents 0-3; Rx represents H or hydrocarbon group; X1 represents divalent linking group; X2 represents H or hydrocarbon group; Y represents single bond or C(O); A represents alkylene group which may be substituted with oxygen atom, carbonyl group or alkylene group which may have fluorine atom; Q1 and Q2 represents F or fluorinated alkyl group; and W+ represents primary, secondary or tertiary ammonium coutercation which exhibits pKa smaller than pKa of H2N+(X2)—X1—Y—O-A-C(Q1)(Q2)—SO3? generated by decomposition upon exposure].

Abstract: A method for producing a thick film photoresist pattern including laminating a thick photoresist layer including a chemically amplified positive-type photoresist composition for thick film on a support; irradiating the thick photoresist layer; and developing the thick photoresist layer to obtain a thick film resist pattern; in which the composition includes an acid generator, a resin whose alkali solubility increases by the action of an acid, and an organic solvent having a boiling point of at least 150° C. and a contact angle on a silicon substrate of no greater than 18°, in an amount of at least 40% by mass with respect to total mass of the organic solvent.

Abstract: In a cleaning liquid containing (A) an anticorrosive agent, and (B) a solvent, a compound represented by the following formula (1): wherein, R represents a substituent group; m is an integer of 1 to 3; and n is an integer of 0 to 3, wherein provided that m is 2 or 3, R may be the same or different; or the following formula (2): HS—(CH2)x—OH??(2) wherein, x is an integer of no less than 3, is used as the anticorrosive agent (A).

Abstract: A method of forming a resist pattern including: applying a first resist composition containing a base component that exhibits increased solubility in an alkali developing solution and a photobase generator component that generates a base upon exposure to a substrate to form a first resist film; conducting exposure; conducting baking; conducting an alkali development, thereby forming a negative-tone resist pattern; applying a second resist composition containing a second base component that exhibits increased solubility in an alkali developing solution, an acid generator component that generates acid upon exposure and an organic solvent that does not dissolve the negative-tone resist pattern to the substrate having the negative-tone resist pattern formed thereon to form a second resist film; conducting exposure; and conducting an alkali development, thereby forming a resist pattern.

Abstract: A resist composition comprising: a base component (A) that exhibits changed solubility in a developing solution by the action of acid; a photoreactive quencher (C); and an acid-generator component (B) that generates acid upon exposure, wherein the photoreactive quencher (C) contains a compound represented by general formula (c1) shown below. In the formula, R1 represents a hydrogen atom or a hydrocarbon group of 1 to 20 carbon atoms which may have a substituent; each of R2 and R3 independently represents a hydrogen atom or a hydrocarbon group of 1 to 20 carbon atoms which may have a substituent; at least two of R1 to R3 may be mutually bonded to form a ring; X represents an oxygen atom or a sulfur atom; n represents 0 or 1; and Z+ represents an organic cation.

Abstract: A resist composition containing a base component (A) which generates acid upon exposure, and exhibits changed solubility in a developing solution under the action of acid, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-0) shown below and a structural unit (a6) that generates acid upon exposure. In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R1 represents a sulfur atom or an oxygen atom, R2 represents a single bond or a divalent linking group, and Y represents a hydrocarbon group in which a carbon atom or a hydrogen atom may be substituted with a substituent.

Abstract: A substrate cleaning apparatus includes a transport section that transports a substrate in a predetermined direction, and an ultrasonic oscillation section that can clean the front surface side of the substrate by applying ultrasonic waves to the back surface of the substrate which is transported in the predetermined direction by the transport section. The ultrasonic oscillation section includes a liquid supply section that brings liquid into contact with the back surface of the substrate by surface tension, and a vibrator that applies ultrasonic vibrations to the liquid.

Abstract: A resist composition including a base component containing a polymer (A1) having a structural unit (a5) containing a group represented by general formula (a5-0-1) or (a5-0-2), wherein the amount of the monomer that derives the structural unit (a5) is not more than 100 ppm relative to (A1). In the formulas, each of Q1 and Q2 represents single bond or divalent linking group, R3, R4 and R5 represent organic groups, and R4 and R5 may be bonded to each other to form a ring in combination with the sulfur atom, provided that —R3—S+(R4)(R5) has a total of only one aromatic ring or has no aromatic rings, V? represents a counter anion, A? represents an organic group containing anion, and Mm+ represents an organic cation having a valency of m, wherein m represents an integer of 1 to 3, provided that Mm+ has only one aromatic ring or has no aromatic rings.

Abstract: A method of producing a polymeric compound, including: copolymerizing a monomer containing an —SO2— containing cyclic group with a monomer containing an acid decomposable group which exhibits increased polarity by the action of acid, thereby obtaining the polymeric compound, provided that the polymeric compound comprises no structural unit derived from a monomer that generates acid upon exposure, wherein the copolymerizing is conducted in the presence of 0.001 to 1.0 mol % of a basic compound, based on the monomer containing an —SO2— containing cyclic group.

Abstract: A method of forming a resist pattern including: step (1) in which a resist composition including a base component and a photobase generator component is applied to a substrate to form a resist film; step (2) in which the resist film is subjected to immersion exposure; step (3) in which baking is conducted after step (2), such that, at an exposed portion of the resist film, the base generated from the photobase generator component and an acid provided to the resist film in advance are neutralized, and at an unexposed portion of the resist film, the solubility of the base component in an alkali developing solution is increased by the action of the acid; and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern, wherein a receding angle of water on the resist film is 65° or more.

Abstract: A stripping solution for photolithography including hydrofluoric acid, a basic compound represented by general formula (b-1), and water. In the formula, R1b to R5b represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms or the like, and at least one of R1b to R5b represents a hydrogen atom. One of R1b to R4b may bind with R5b to form a ring structure. Y1b and Y2b represent an alkylene group having 1 to 3 carbon atoms, and n is an integer of 0 to 5.