Abstract: A solid-phase crystallization process for producing a semiconductor film of polycrystalline material such as silicon from a film containing the material in an amorphous state includes depositing on a substrate a substantially amorphous film of the material. Next, the amorphous material is partially crystallized to form in the film microcrystallite material particles adjacent noncrystallized regions. The process also includes implanting in the film ions of a preselected type, and at a preselected energy, dose and species, selectively to eliminate preselected ones of the microcrystallite material particles, and further to amorphize the non-crystallized regions. Ultimately, an annealing of the film is performed to at least substantially form polycrystalline material.

Abstract: A method is provided of fabricating a thin film transistor semiconductor film of polycrystalline silicon on a transparent substrate suitable for the manufacture of a liquid crystal display. The deposition of silicon film at very low rates provides conditions for the optimum formation of microcrystallites. As the amorphous silicon is annealed, crystal grains, begun from the seed crystals, are formed in the resulting polycrystalline silicon. The seed crystals help regulate the annealment process, and reduce process dependence on precision deposition and heating methods. This microcrystalline film results in a polycrystalline film having larger crystal grains, and crystal grains of a relatively uniform size. The invention relies on a quantifiable relationship between the pre-melt crystalline fraction and crystallite density, post-melt crystalline fraction and crystallite density, and the ELA density during annealing.

Abstract: A method is provided for optimizing the crystal drain size in polycrystalline silicon films deposited on transparent substrates suitable for the manufacture of liquid crystal displays. A film of microcrystalline silicon is deposited on a transparent substrate in a manner which yields microcrystallites embedded in the film during deposit. By means of excimer laser anneal, or another suitable annealing method, the microcrystalline silicon film is partially melted to leave a portion of the microcrystallites unmelted upon completion of the anneal. The film is then allowed to crystallize by crystal growth from the microcrystallites that remain unmelted in the film. The result is high quality polycrystalline silicon having large grain sizes suitable for active devices, such as TFTs.

Abstract: The invention provides a method of making silicon-on-glass substrates used in the manufacture of flat panel displays. A layer of amorphous silicon film is deposited on a glass substrate. The amorphous silicon is annealed by excimer laser annealing, transforming the amorphous silicon into polycrystalline silicon. The excimer laser annealing is carried out in a predominantly air ambient environment at atmospheric pressure and room temperature. The process requires no environmental chamber to house the substrate during excimer laser annealing. The process displaces the ambient air immediately surrounding the target region on the surface of the silicon film, where the laser beam strikes the silicon film, with inert gas. As a result, the ambient environment at the point of annealing on the substrate is depleted of oxygen and the oxygen content of the resultant polycrystalline silicon layer is kept below a predetermined level.

Abstract: A method is provided of fabricating a thin film transistor semiconductor film of polycrystalline silicon on a transparent substrate suitable for the manufacture of a liquid crystal display. A film of substantially amorphous silicon is placed on the transparent substrate. Suspended in the amorphous silicon are small silicon seed crystals. As the amorphous silicon is annealed, crystal grains, begun from the seed crystals, are formed in the resulting polycrystalline silicon. The seed crystals help regulate the annealment process, and reduce process dependence on precision deposition and heating methods. The use of seed crystals also helps ensure that crystal grains are both large and consistent in size. Large grains promote to production of TFTs with high electron mobility and uniform performance across the entire LCD. An LCD with a TFT polycrystalline film layer over a transparent substrate, formed from annealing substantially amorphous silicon with suspended seed crystals, is also provided.

Abstract: A method is provided of fabricating a thin film transistor semiconductor film of polycrystalline silicon on a transparent substrate suitable for the manufacture of a liquid crystal display. A film of substantially amorphous silicon is placed on the transparent substrate. Suspended in the amorphous silicon are small silicon seed crystals. As the amorphous silicon is annealed, crystal grains, begun from the seed crystals, are formed in the resulting polycrystalline silicon. The seed crystals help regulate the annealment process, and reduce process dependence on precision deposition and heating methods. The use of seed crystals also helps ensure that crystal grains are both large and consistent in size. Large grains promote to production of TFTs with high electron mobility and uniform performance across the entire LCD.