Abstract: A method for forming an intermediate structure in the formation of an optoelectronic device in provided. The method includes: a) obtaining a stack of layers over a substrate holder in a sputtering chamber, the stack of layers comprising an active layer comprising an active material having a perovskite crystal structure, an n-type semiconducting layer comprising a fullerene over the active layer, and an energy alignment layer comprising a lithium halide, a magnesium halide Al2O3 or a metal fluoride on, and in contact with, the n-type semiconducting layer, wherein the energy alignment layer comprises an exposed top surface, and b) sputtering an n-type semiconducting metal oxide layer on the exposed top surface of the energy alignment layer, wherein said sputtering is performed at a sputtering power density of at most 1 W·cm-2 and at a temperature of the stack of layers of at most 100° C.

Abstract: The present invention provides a method for producing a layer of organic material. The method comprises providing onto a substrate, under deposition conditions, a layer of a solution comprising said organic material dissolved in a solvent; optionally partially drying said layer of solution; thereafter annealing said layer of solution, said annealing being applied before said layer of solution has been dried out completely and the duration of said annealing being limited such that said layer of solution is not dried out completely during the annealing, said annealing inducing reflow of said layer of solution; and thereafter drying out said layer of solution, said drying out being controlled such that it is performed slower than it would be under deposition conditions. The resulting layer of organic material shows an improvement of both the micro quality and the macro quality, leading to obtaining a fully continuous film with minor surface roughness and an accurate line resolution and edge definition.

Abstract: The present invention is related to a multi-junction photovoltaic module comprising a first photovoltaic sub-module and a second photovoltaic sub-module stacked on the first photovoltaic sub-module, wherein the first photovoltaic sub-module comprises a plurality of first photovoltaic sub-cells that are monolithically integrated on a first substrate and wherein the second photovoltaic sub-module comprises a plurality of second photovoltaic sub-cells that are monolithically integrated on a second substrate; the plurality of first photovoltaic sub-cells is substantially identical; the plurality of second photovoltaic sub-cells is substantially identical; the plurality of first photovoltaic sub-cells is electrically connected in series; the plurality of second photovoltaic sub-cells is electrically connected in series; the first photovoltaic sub-module and the second photovoltaic sub-module are electrically connected in parallel.

Abstract: The present invention provides a method for producing a layer of organic material. The method comprises providing onto a substrate, under deposition conditions, a layer of a solution comprising said organic material dissolved in a solvent; optionally partially drying said layer of solution; thereafter annealing said layer of solution, said annealing being applied before said layer of solution has been dried out completely and the duration of said annealing being limited such that said layer of solution is not dried out completely during the annealing, said annealing inducing reflow of said layer of solution; and thereafter drying out said layer of solution, said drying out being controlled such that it is performed slower than it would be under deposition conditions. The resulting layer of organic material shows an improvement of both the micro quality and the macro quality, leading to obtaining a fully continuous film with minor surface roughness and an accurate line resolution and edge definition.

Abstract: An organic field-effect transistor comprises source and drain electrodes formed separately from each other on a substrate, wherein the substrate comprises at least an organic semiconductor layer constituting a channel between the source and drain electrodes, an insulation layer underlying the organic semiconductor layer, and a gate electrode formed on the opposite side of the isolation layer. The organic semiconductor layer comprises hole and electron transporters, wherein the electron transporters comprise (6,6)-phenyl C61-butyric acid methyl ester (PCBM), and wherein the hole transporters comprise poly(2-methoxy-5-(3′,7′-dimethyloctyloxy)-1,4-phenylene-vinylene)(OC1C10-PPV) and/or poly(3-hexylthiophene) (P3HT).

Abstract: An organic field-effect transistor comprises source and drain electrodes formed separately from each other on a substrate, wherein the substrate comprises at least an organic semiconductor layer constituting a channel between the source and drain electrodes, an insulation layer underlying the organic semiconductor layer, and a gate electrode formed on the opposite side of the isolation layer. The organic semiconductor layer comprises hole and electron transporters, wherein the electron transporters comprise (6,6)-phenyl C61-butyric acid methyl ester (PCBM), and wherein the hole transporters comprise poly(2-methoxy-5-(3′,7′-dimethyloctyloxy)-1, 4-phenylene-vinylene)(OC1C10-PPV) and/or poly(3-hexylthiophene) (P3HT).