Abstract: Capacitors including a first conductive material having a first upper finger located on an upper plane and a first lower finger located on a lower plane. The capacitor also includes a second conductive material having a second upper finger and a second lower finger, the second upper finger located on the upper plane such that the second upper finger is next to the first upper finger forming a first interface and on top of the first lower finger forming a second interface, the second lower finger located on the lower plane such that the second lower finger is next to the first lower finger forming a third interface and below the first upper finger forming a fourth interface. Finally, the capacitor includes a dielectric material located in the first interface, the second interface, the third interface, and the fourth interface.

Abstract: A magnetic AND/NOR circuit has a first, a second, a third, and a fourth magnetic transistor. These four magnetic transistors as ordinary transistors that can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The ‘AND’ and ‘NOR’ logic functions of the binary system can be implemented by the control of these metal devices.

Abstract: The method for reducing word line currents in magnetoresistive random access memory (MRAM) includes disposing the MRAM bit between a pair of word lines according to a magnetic field strength is increased when a distance between a magnetic section and its corresponding word line is decreased.

Abstract: An integrated circuit with magnetic memory has a silicon transistor layer, at least one magnetic memory layer, and a metal routing layer. The silicon transistor layer is arranged to generate several logic operation functions. The magnetic memory layer is arranged to store the data required by the logic operation functions. The metal routing layer has several conducting lines to transmit the data between the silicon transistor layer and the magnetic memory layer.

Abstract: A magnetic transistor circuit with the OR, NOR, NAND and AND functions has a first, a second, a third, a fourth magnetic transistor, and a routing line. These four magnetic transistors as ordinary transistors that can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The OR, NOR, NAND and AND logic functions of the binary system can be implemented by the control of these metal devices.

Abstract: An apparatus to store electrical energy has a first magnetic section, a second magnetic section and a dielectric section configured between the first magnetic section and the second magnetic section. The dielectric section is arranged to store electrical energy, and dipoles of the first magnetic section and the second magnetic section are arranged to prevent electrical energy leakage.

Abstract: An apparatus to store electrical energy has a first magnetic unit, a second magnetic unit, and a dielectric section. The first magnetic unit has a first magnetic section and a second magnetic section. The second magnetic unit has a third magnetic section and a fourth magnetic section. The dielectric section is configured between the first magnetic unit and the second magnetic unit. The dielectric section is arranged to store electrical energy, and dipoles of the first magnetic section, the second magnetic section, the third magnetic section, and the fourth magnetic section are arranged to prevent electrical energy leakage.

Abstract: A magnetic transistor circuit representing the data ‘1’ and ‘0’ of the binary system comprises a routing line and a magnetic transistor unit. The routing line has a current going through with a first current direction or a second current direction, wherein the first current direction and the second current direction are opposite to represent the data ‘1’ and the data ‘0’ respectively. The magnetic transistor unit couples to the routing line at an output end to control the direction of the current going through the routing line.

Abstract: A magnetic OR/NAND circuit has a first, a second, a third, and a fourth magnetic transistor. These four magnetic transistors that work as the ordinary transistors can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The ‘OR’ and ‘NAND’ logic functions of the binary system can be implemented by the control of these metal devices.

Abstract: A magnetic transistor circuit with the AND, NAND, NOR and OR functions has a first, a second, a third, a fourth magnetic transistor, and a routing line. These four magnetic transistors act as ordinary transistors that can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The AND, NAND, NOR and OR logic functions of the binary system can be implemented by the control of these metal devices.

Abstract: A magnetic transistor circuit has a first and a second magnetic transistor. These two magnetic transistors that work as the ordinary transistors can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The EXOR logic function of the binary system can be implemented by the control of these metal devices.

Abstract: Endoscopic devices methods and devices are provided for attaching opposed walls of tissue. The methods and devices can be used to deliver a plurality of fasteners to opposed tissues, and suture extending through the fasteners can be used to pull the tissues together. The suture can be pre-woven through the fasteners, thus allowing for a quick and simply deployment. While the various methods and devices disclosed herein can be used in a variety of procedures, in certain exemplary embodiments the methods and devices are used to pull together opposed walls of the stomach to form a stomach pouch within the stomach which reduces the rate of gastric emptying.

Abstract: A magnetic memory has a first, a second and a third magnetic transistor. The first magnetic transistor has a first magnetic section and a second magnetic section, wherein the first magnetic section couples to a high voltage end. The second magnetic transistor has a third magnetic section and a fourth magnetic section, wherein the third magnetic section couples to a low voltage end, and the fourth magnetic section couples to the second magnetic section of the first magnetic transistor. The third magnetic transistor has a fifth magnetic section and a sixth magnetic section, wherein the fifth magnetic section couples with the second magnetic section and the fourth magnetic section together, and the sixth magnetic section couples to an input/output end.

Abstract: A magnetic transistor circuit has a first and a second magnetic transistor. These two magnetic transistors that work as the ordinary transistors can be turned on or turned off by the control of several metal devices respectively disposed around the magnetic transistors. The buffer and inverter logic functions of the binary system can be implemented by the control of these metal devices.

Abstract: An upside-down MRAM comprises a sense transistor and a plurality of sense lines. A first end of the sense transistor is electrically connected to a low voltage. The sense lines are electrically connected in parallel between a high voltage and a second end of the sense transistor. Each of the sense lines has a control logic and at least one memory bit, and the memory bit is connected in series between the high voltage and the control logic.

Abstract: Catheters including a rugged, reusable proximal body and a disposable distal body attached by a releasable connection are provided. The reusable proximal body is constructed from resterilizable materials such as glass, metal alloys and engineering plastics. The disposable distal body, designed for one-time use, is made from reliable but inexpensive materials. The catheters may be dilatation catheters and may be manufactured in any configuration, including rapid exchange, balloon-on-a-wire, and over-the-wire designs with single or multiple lumens. The modular construction of the catheter and releasable connection provides for rapid and easy changes in the configuration and balloon size depending on the needs of the medical procedure.

Abstract: A dynamically configurable operating system is achieved by providing a module sub-system which intercepts requests by processes to access a module in the operating system and determines whether the module has been loaded in the kernel memory and linked the other modules located in the kernel memory and installed in the appropriate table. If the module has been into the kernel memory, and installed the module sub-system grants the requesting installed process access to the module and processing continues. If the module has not been loaded into the kernel memory, the module sub-system will retrieve a copy of the module stored and copy it into kernel memory. The module is then linked to the other modules located in the kernel and installed. Once the module is loaded and linked and installed, access is granted to the requesting process and normal processing continues.

Abstract: A method and apparatus for automatically generating device names in a computer system, wherein device names are generated to reflect the physical realities of system configuration. An existing device driver interface is employed, wherein a parent device driver's bus.sub.-- ctl function, along with a child device driver's probe and attach routines, are used to generate device names.

Abstract: A portable underwater signalling apparatus for use by divers having self-contained underwater breathing apparatus (scuba) to signal to other divers as well as surface and underwater vessels. The apparatus utilizes compressed air from the diver's tanks to drive a hammer against a diaphragm to cause sound waves to be transmitted through the water.

Abstract: Lithium haloboracites of the formula Li.sub.4 B.sub.7 O.sub.12 X where X is Cl, Br, I or a mixture thereof are useful as solid electrolytes for galvanic cells. Preferred lithium haloboracites are those in which X is a mixture of Br and Cl where Br is 20 to 50 mole percent of X.