Abstract: The present disclosure is drawn to, among other things, a magnetoresistive device and a magnetoresistive memory comprising a plurality of such magnetoresistive devices. In some aspects, a magnetoresistive device may include a magnetically fixed region, a magnetically free region above or below the magnetically fixed region, and an intermediate region positioned between the magnetically fixed region and the magnetically free region, wherein the intermediate region includes a first dielectric material. The magnetoresistive device may also include encapsulation layers formed on opposing side walls of the magnetically free region, wherein the encapsulation layers include the first dielectric material.

Abstract: A memory controller portion of a DRAM is synchronized to a system clock, while an array portion of the DRAM is allowed to process signals at the array's natural frequency—independent of fixed timing parameters. By allowing the array portion to function at its natural frequency, the array's performance is not limited to “worst case” parameters; instead the DRAM can achieve maximize array performance at all voltage and temperature corners. The controller portion of the DRAM initiates an array access cycle, then waits until the array portion returns a data-valid signal. Since the array portion of the DRAM operates at its own natural frequency the data-valid signal can be completely asynchronous to the controller portion of the DRAM, which is operating in synchronization with a system clock. In order to ensure that the data-valid signal is latched properly, the controller sends an early version of the system clock to the data valid circuitry in the array portion of the DRAM.