Abstract: An integrated photonic beam steering device includes a planar photonic substrate. An input waveguide is configured to accept an electromagnetic energy from a source of electromagnetic energy radiation. A first splitter is configured to split the electromagnetic radiation into one or more paths. One or more phased array rows are optically coupled to each of the one or more paths. Each phased array row includes a row splitter configured to split the each of the one or more paths into two or more row paths. Two or more phase modulators are each optically coupled respectively to each of the two or more row paths. Two or more output couplers are optically coupled respectively to each phase modulator output of the two or more phase modulators. The two or more output couplers are configured to radiate a steered photonic beam away from the integrated photonic beam steering device.

Abstract: According to the invention, an integrated hyperspectral imager includes a planar photonic substrate. A plurality of imaging pixel photonic circuits is disposed in a M×N array on the planar photonic substrate. Each imaging pixel photonic circuit includes an input coupler configured to receive a broadband input electromagnetic radiation. A waveguide is optically coupled to the input coupler. A plurality of wavelength filters is optically coupled to the waveguide. Each wavelength filter has a wavelength filter input and a wavelength filter output. Each detector has a detector input optically coupled respectively to each of the wavelength filter outputs. Each detector has a respective detector output. The integrated hyperspectral imager is configured to provide electrical signals that are representative of a hyperspectral image of the received broadband input electromagnetic radiation. A method for recording an image based on a received electromagnetic radiation is also described.

Abstract: A single-photon absorption all-optical modulator, systems employing the same, and methods of making and using the same. An illustrative example is provided based on silicon semiconductor technology that employs rectangular waveguides. In some embodiments, it is observed that the waveguides operate with an absorption density of less than 1017 cm?1s?1mW?1 to provide a single-photon absorption operation mode.

Abstract: An all-optical XOR logic gate. In one embodiment, a single photon absorption medium is used to provide enhanced optical response of a gate to an applied optical signal. The apparatus described uses at least two gate inputs and an optical modulation structure such as a Mach-Zehnder interferometer to perform logical XOR operations on an optical input signal using the gate inputs. The result of the XOR operation is provided as information in an optical output signal representative of the result of the XOR operation impressed on the optical input signal.

Abstract: Systems and methods for manipulating light with high index contrast waveguides clad with crystalline substances having that exhibit large nonlinear electro-optic constants ?2 and ?3. Waveguides fabricated on SOI wafers and clad with crystalline materials such as barium titanate are described. Embodiments of waveguides having slots, electrical contacts, and input waveguide couplers are discussed. Waveguides having closed loop structures (such as rings and ovals) as well as linear or serpentine waveguides, are described. Optical signal processing methods, such as optical rectification and optical modulation, are disclosed.

Abstract: Systems and methods for manipulating light with high index contrast waveguides clad with substances having that exhibit large nonlinear electro-optic constants ?2 and ?3. Waveguides fabricated on SOI wafers and clad with electro-optic polymers are described. Embodiments of waveguides having slots, electrical contacts, and input waveguide couplers are discussed. Waveguides having closed loop structures (such as rings and ovals) as well as linear or serpentine waveguides, are described. Optical signal processing methods, such as optical rectification and optical modulation, are disclosed. Designs having responsivity of less than 1 volt-centimeter are described.

Abstract: All-optical processing devices that include patterned optically active polymers. The devices that are constructed according to principles of the invention include at least one optical input port and at least one optical output port, respectively configured to accept optical input signals and provide optical output signals. The devices include optically active material such as organic polymers that interact with illumination at a first wavelength to change at least one optical property in a non-linear manner. The optically active polymer can be placed adjacent one or more waveguides that allow the input illumination to propagate. As the optical property of the optically active material is changed by the incident illumination, the propagating illumination undergoes a modulation or change in phase, thereby providing an optical output signal having a desired relation to the optical input signal, such as the result of a logical or a computational operation.

Abstract: A single-photon absorption all-optical modulator, systems employing the same, and methods of making and using the same. An illustrative example is provided based on silicon semiconductor technology that employs rectangular waveguides. In some embodiments, it is observed that the waveguides operate with an absorption density of less than 1017 cm?1s?1mW?1 to provide a single-photon absorption operation mode.

Abstract: A photodetector device, comprises an optical input, a nanoscale silicon waveguide and an electrical output. The waveguide is a high-contrast waveguide, with a refractive index contrast with the outside environment of more that 10%. The optical mode distribution across the waveguide has a peak intensity in correspondence of surface states of the nanoscale silicon waveguide. A related method is also disclosed.

Abstract: Systems and methods for manipulating light with high index contrast waveguides clad with substances having that exhibit large nonlinear electro-optic constants ?2 and ?3. Waveguides fabricated on SOI wafers and clad with electro-optic polymers are described. Embodiments of waveguides having slots, electrical contacts, and input waveguide couplers are discussed. Waveguides having closed loop structures (such as rings and ovals) as well as linear or serpentine waveguides, are described. Optical signal processing methods, such as optical rectification and optical modulation, are disclosed. Designs having responsivity of less than 1 volt-centimeter are described.

Abstract: A silicon based source for radiation in the 0.5-14 Terahertz regime. This new class of devices will permit continuously tunable, milli-Watt scale, continuous-wave, room temperature operation, a substantial advance over currently available technologies. The Silicon Terahertz Generator (STG) employs a silicon waveguide for near infrared radiation, situated within a metal waveguide for Terahertz radiation. A nonlinear polymer cladding permits two near-infrared lasers to mix, and through difference frequency generation produces Terahertz output. The small dimensions of the design greatly increase the optical fields, enhancing the nonlinear effect. The design can also be used to detect Terahertz radiation.

Abstract: A metal waveguide is coupled to a dielectric waveguide to obtain transmission of light in a plasmon mode along an edge of the metal waveguide. Efficient, broadband light transmission is obtained, achieving a low insertion loss, using standard processing tools. An efficient integrated optical circuit is obtained.

Abstract: Systems and methods for manipulating light with high index contrast waveguides clad with substances having that exhibit large nonlinear electro-optic constants ?2 and ?3. Waveguides fabricated on SOI wafers and clad with electro-optic polymers are described. Embodiments of waveguides having slots, electrical contacts, and input waveguide couplers are discussed. Waveguides having closed loop structures (such as rings and ovals) as well as linear or serpentine waveguides, are described. Optical signal processing methods, such as optical rectification and optical modulation, are disclosed.

Abstract: A silicon based source for radiation in the 0.5-14 Terahertz regime. This new class of devices will permit continuously tunable, milli-Watt scale, continuous-wave, room temperature operation, a substantial advance over currently available technologies. The Silicon Terahertz Generator (STG) employs a silicon waveguide for near infrared radiation, situated within a metal waveguide for Terahertz radiation. A nonlinear polymer cladding permits two near-infrared lasers to mix, and through difference frequency generation produces Terahertz output. The small dimensions of the design greatly increase the optical fields, enhancing the nonlinear effect. The design can also be used to detect Terahertz radiation.

Abstract: Methods and devices for low power optical detection and modulation in a slotted waveguide geometry filled with nonlinear electro-optic polymers are shown. Direct conversion of optical energy to electrical energy is enabled without external bias, via optical rectification, also enhancing electro-optic modulation.

Abstract: A near-field scanning microscopy probe and a method for doing the same. A metal plasmon or dielectric waveguide is connected to a deformable material and coupled to a dielectric waveguide on a chip. The probe pops up out of the plane of the chip. The probe can be easily integrated with standard on-chip optical components.

Abstract: A light generating system that comprises a narrow evacuated slot defined between at least two high index contrast waveguide elements. The apparatus can be fabricated using a material such as a SOI wafer having an oxide layer thickness of the order of 1 micron and a top silicon layer thickness of the order of 100-150 nm. Electrode contacts are provided to at least two waveguide elements fabricated in the top silicon layer, each waveguide element having a thickness comparable to the top silicon layer thickness, a width of some hundreds of nm, and having a slot having dimensions in the range of 50-200 nm defined therebetween. The length of the slot is at least as long as the slot width. Charged particles, such as electrons, that are emitted and accelerated across the slot by an applied electrical signal provide a source of photons as a consequence of being accelerated and/or decelerated.

Abstract: A light generating system that comprises a narrow evacuated slot defined between at least two high index contrast waveguide elements. The apparatus can be fabricated using a material such as a SOI wafer having an oxide layer thickness of the order of 1 micron and a top silicon layer thickness of the order of 100-150 nm. Electrode contacts are provided to at least two waveguide elements fabricated in the top silicon layer, each waveguide element having a thickness comparable to the top silicon layer thickness, a width of some hundreds of nm, and having a slot having dimensions in the range of 50-200 nm defined therebetween. The length of the slot is at least as long as the slot width. Charged particles, such as electrons, that are emitted and accelerated across the slot by an applied electrical signal provide a source of photons as a consequence of being accelerated and/or decelerated.

Abstract: Systems and methods for manipulating light with high index contrast waveguides clad with substances having that exhibit large nonlinear electro-optic constants ?2 and ?3. Waveguides fabricated on SOI wafers and clad with electro-optic polymers are described. Embodiments of waveguides having slots, electrical contacts, and input waveguide couplers are discussed. Waveguides having closed loop structures (such as rings and ovals) as well as linear or serpentine waveguides, are described. Optical signal processing methods, such as optical rectification and optical modulation, are disclosed.

Abstract: Various embodiment comprise silicon-on-insulator waveguide designs that simultaneously achieve both high optical confinement, low-loss, and provide for electrical connections. In certain embodiments, high index contrast waveguides comprise a central elongate waveguide portion and a segmented portion comprising a single thin layer of Silicon-On-Insulator that achieves both high optical confinement and minimal insertion loss. Other devices, such as chemical and biological sensors, and optical elements may also be fabricated.