Abstract: A substrate processing apparatus (100) and a method, comprising a reaction chamber (110) for accommodating one or more substrates (120) for processing, wherein the reaction chamber walls comprise a first wall (W1), second wall W2 located opposite to the first wall (W1), and one or more side walls connecting the first wall (W1) and the second wall (W2), an injection manifold (130) attached to the first wall (W1) to feed precursor flow (Fp) to the reaction chamber (110) through an entrance opening (160) in the first wall (W1), and two exhaust ports, a first exhaust port (150a) and a second exhaust port (150b), arranged to at least one of the one or more the side walls (SW1, SW2, SW3, SW4) to remove fluid from the reaction chamber (110).

Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

Abstract: A substrate processing apparatus (100), comprising a reaction chamber (20) for processing at least one substrate, and a deformable in-feed assembly (85) comprising an upper (70) and a lower (80) portion movable with respect to each other, the deformable in-feed assembly (85) being configured to deform between a vertically extended state facilitating a reactant flow towards the reaction chamber (20), and a vertically retracted state allowing substrate loading, and a resilient tubular conduit (150) coupled to the upper portion (70) of the deformable in-feed assembly (85).

Abstract: A substrate processing apparatus (100), comprising a reaction chamber (20) having an upper portion (20a) and a lower portion (20b) sealing an inner volume of the reaction chamber (20) for substrate processing, the lower portion (20b) being movable apart from the upper portion (20a) to form a substrate loading gap therebetween, a substrate support system comprising a support table (31) and at least one support element (70) vertically movable in relation to the support table (31) and extending through the support table (31) to receive a substrate within the reaction chamber (20), and a stopper (90) stopping a downward movement of the at least one support element (70) at a substrate loading level.

Abstract: A method and substrate processing apparatus (100) for cleaning a reaction chamber (110) of the substrate processing apparatus (100), wherein cleaning gas is provided from a cleaning gas source (190), a first cleaning gas flow is fed through a first inlet (120) and a second cleaning gas flow through a second inlet (180) into the reaction chamber (110) for etching the reaction chamber, wherein the first cleaning gas flow and the second cleaning gas flow enter the reaction chamber (110) from different directions, and wherein the cleaning gas is activated before said etching.

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

Abstract: A method for forming a coating on a substrate is provided, the method comprises: using a molecular layer deposition (MLD) process depositing at least one layer directly or indirectly on a surface, and an atomic layer deposition (ALD) process, depositing an inorganic film on/over the at least one layer. In the formed coating conditions are established which allow unbound, unreacted and/or partially reacted precursors to enter chemical interaction with harmful environmental species penetrated into the coating at defective sites thereof and seal said defective sites through formation of a sealing compound. A laminate coating, uses thereof and coated items are further provided.

Abstract: Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.

Abstract: A corrosion resistant coating for substrates susceptible to corrosion in essentially saline environments, optionally, in vivo environments, is provided. The coating is provided as a nanolaminate structure comprising a plurality of deposition layers formed through a process of chemical deposition in vapour phase, preferably, through Atomic Layer Deposition (ALD) such that the deposition layers having a first composition alternate with the deposition layers having a second composition different from the first composition. A nanolaminate stack produced thereby forms a diffusion barrier that efficiently prevents corrosive species, such as corrosive ionic species, originating from essentially saline environments from contacting the substrate. Related method for improving resistance of a substrate to corrosion in essentially saline media and uses of the nanolaminate coating are further provided.

Abstract: Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.

Abstract: Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.

Abstract: A semiconductor processing system for providing a remotely generated excited species of a processing gas to a reactor. The semiconductor processing system comprises a remotely positioned plasma generator in fluid communication with a plasm source vessel and a gas line to convey an excited species generated in the plasma generator to the reactor. The gas line may be a double-walled pipe comprising an outer pipe and a perforated an inner pipe or a gas line to which DC bias voltage is applied.

Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.

Abstract: Precursor container, comprising a first volume formed by a first chamber to house precursor material, a second volume formed by a second chamber and separated from the first volume by a partition wall, and a conduit passing through the partition wall and extending from the first volume to the second volume providing the precursor material housed within the first volume with a route to the second volume following a pressure increase in the first volume. The partition wall is a gas-permeable wall allowing gas from the first volume to permeate to the second volume.

Abstract: A substrate processing apparatus, includes a reaction chamber, an outer chamber at least partly surrounding the reaction chamber wherein an intermediate space is formed between the reaction chamber and the outer chamber, at least one heater element, at least one heat distributor in the intermediate space, and at least one heater element feedthrough in the outer chamber allowing at least a part of the at least one heater element to pass through into the intermediate space and to couple with the at least one heat distributor.

Abstract: A substrate processing apparatus (100), comprising a reaction chamber (20) having an upper portion (20a) and a lower portion (20b) sealing an inner volume of the reaction chamber (20) for substrate processing, the lower portion (20b) being movable apart from the upper portion (20a) to form a substrate loading gap therebetween, a substrate support system comprising a support table (31) and at least one support element (70) vertically movable in relation to the support table (31) and extending through the support table (31) to receive a substrate within the reaction chamber (20), and a stopper (90) stopping a downward movement of the at least one support element (70) at a substrate loading level.

Abstract: The current disclosure relates to methods of depositing silicon oxide on a substrate, methods of forming a semiconductor device and a method of forming a structure. The method comprises providing a substrate in a reaction chamber, providing a silicon precursor in the reaction chamber, the silicon precursor comprising a silicon atom connected to at least one oxygen atom, the at least one oxygen atom being connected to a carbon atom, and providing a reactant comprising hydrogen atoms in the reaction chamber to form silicon oxide on the substrate.