Patents by Inventor Tom GREGORKIEWICZ

Tom GREGORKIEWICZ has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11133435
    Abstract: Provided is a technique for manufacturing a nitride semiconductor substrate with which it is possible to manufacture a nitride semiconductor substrate having sufficiently reduced dislocation density with a large area even if manufactured on an inexpensive substrate made of sapphire, etc. A nitride semiconductor substrate in which a nitride semiconductor layer formed on a substrate is formed by laminating an undoped nitride layer and a rare earth element-added nitride layer to which a rare earth element is added as a doping material, and the dislocation density is of the order of 106 cm?2 or less.
    Type: Grant
    Filed: November 20, 2017
    Date of Patent: September 28, 2021
    Assignee: OSAKA UNIVERSITY
    Inventors: Yasufumi Fujiwara, Wanxin Zhu, Atsushi Koizumi, Brandon Mitchell, Tom Gregorkiewicz
  • Publication number: 20190280156
    Abstract: Provided is a technique for manufacturing a nitride semiconductor substrate with which it is possible to manufacture a nitride semiconductor substrate having sufficiently reduced dislocation density with a large area even if manufactured on an inexpensive substrate made of sapphire, etc. A nitride semiconductor substrate in which a nitride semiconductor layer formed on a substrate is formed by laminating an undoped nitride layer and a rare earth element-added nitride layer to which a rare earth element is added as a doping material, and the dislocation density is of the order of 106 cm-2 or less.
    Type: Application
    Filed: November 20, 2017
    Publication date: September 12, 2019
    Applicant: OSAKA UNIVERSITY
    Inventors: Yasufumi FUJIWARA, Wanxin ZHU, Atsushi KOIZUMI, Brandon MITCHELL, Tom GREGORKIEWICZ