Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: Systems and methods for pulsing radio frequency (RF) coils are described. One of the methods includes supplying a first RF signal to a first impedance matching circuit coupled to a first RF coil, supplying a second RF signal to a second impedance matching circuit coupled to a second RF coil, and pulsing the first RF signal between a first parameter level and a second parameter level. The method includes pulsing the second RF signal between a third parameter level and a fourth parameter level in reverse synchronization with the pulsing of the first RF signal.

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: A method for pulsing is described. The method includes generating a first radio frequency (RF) signal, and pulsing a parameter of the first RF signal between a first parameter level and a second parameter level at a pulsing frequency during a cycle of a digital pulsed signal. The method further includes generating a second RF signal, and pulsing a parameter of the second RF signal at a higher pulsing frequency than the pulsing frequency of the parameter of the first RF signal during the cycle. During the cycle, a start time of pulsing the parameter of the first RF signal is synchronized with a start time of pulsing the parameter of the second RF signal and an end time of pulsing the parameter of the first RF signal is synchronized with an end time of pulsing the parameter of the second RF signal.

Abstract: A baseplate of a substrate support assembly includes a cavity between an upper region, a lower region, and sidewalls of the baseplate, a plurality of pillars arranged in the cavity between the upper and lower regions, an inlet to supply a liquid to the cavity, and an outlet to vent vapor of the liquid. In another implementation, a baseplate of a substrate support assembly includes a first channel arranged in the baseplate, a second channel arranged above the first channel, a plurality of vertical channels connecting the first channel to the second channel, an inlet to supply a liquid to the first channel, and an outlet to vent vapor of the liquid from the second channel.

Abstract: A method for adjusting a height of an edge ring arranged around an outer portion of a substrate support includes receiving at least one input indicative of one or more erosion rates of the edge ring. The at least one input includes a plurality of erosion rates for respective usage periods of a substrate processing system. The method further includes determining at least one erosion rate of the edge ring using the plurality of erosion rates for the respective usage periods, monitoring an overall usage of the edge ring and storing the overall usage of the edge ring in a memory, calculating an amount of erosion of the edge ring based on the determined at least one erosion rate and the overall usage of the edge ring, and adjusting the height of the edge ring based on the calculated amount of erosion to compensate for the calculated amount of erosion.

Abstract: A controller for adjusting a height of an edge ring in a substrate processing system includes an edge ring wear calculation module configured to receive at least one input indicative of one or more erosion rates of the edge ring, calculate at least one erosion rate of the edge ring based on the at least one input, and calculate an amount of erosion of the edge ring based on the at least one erosion rate. An actuator control module is configured to adjust the height of the edge ring based on the amount of erosion as calculated by the edge ring wear calculation module.

Abstract: A moveable edge ring system for a plasma processing system includes a top edge ring and a first edge ring arranged below the top edge ring. A second edge ring is made of conductive material and includes an upper portion, a middle portion and a lower portion. The top edge ring and the second edge ring are configured to move in a vertical direction relative to a substrate support and the first edge ring when biased upwardly by a lift pin. The second edge ring is arranged below the top edge ring and radially outside of the first edge ring.

Abstract: A moveable edge ring system for a plasma processing system includes a top edge ring and a first edge ring arranged below the top edge ring. A second edge ring is made of conductive material and includes an upper portion, a middle portion and a lower portion. The top edge ring and the second edge ring are configured to move in a vertical direction relative to a substrate support and the first edge ring when biased upwardly by a lift pin. The second edge ring is arranged below the top edge ring and radially outside of the first edge ring.

Abstract: A plasma processing system includes a chamber having a coil disposed above a dielectric window for providing radio frequency power to the processing region. An etch gas delivery system is coupled to gas sources used for a first etch of a material. A liquid delivery system includes a source of liquid precursor, a liquid flow controller, and a vaporizer. A controller activates the etch gas delivery system to perform the first etch and activates the liquid delivery system to perform an atomic layer passivation (ALP) process after the first etch to coat features with a conformal film of passivation. Each time the ALP process is completed a single atomic monolayer of the conformal film of passivation is formed. The controller activates the etch gas delivery system to perform a second etch, with the conformal film of passivation protecting the mask and sidewalls of the features during the second etch.

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: A method for etching a substrate includes performing, in a plasma chamber, a first etch of a substrate material using a plasma etch process. The first etch forms features to a first depth in the material. Following the first etch, the method includes performing, in the plasma chamber without removing the substrate from the chamber, an atomic layer passivation (ALP) process to deposit a conformal film of passivation over the mask and the features formed during the first etch. The ALP process uses a vapor from a liquid precursor to form passivation over the features and the mask. The method further includes performing, in the plasma chamber, a second etch of the material using the plasma etch process. The conformal film of passivation is configured to protect the mask and sidewalls of the features during the second etch. A plasma processing system also is described.

Abstract: A controller for adjusting a height of an edge ring in a substrate processing system includes an edge ring wear calculation module configured to receive at least one input indicative of one or more erosion rates of the edge ring, calculate at least one erosion rate of the edge ring based on the at least one input, and calculate an amount of erosion of the edge ring based on the at least one erosion rate. An actuator control module is configured to adjust the height of the edge ring based on the amount of erosion as calculated by the edge ring wear calculation module.

Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.

Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.

Abstract: A method for processing a stack with a carbon based patterned mask is provided. The stack is placed in an etch chamber. A silicon oxide layer is deposited by atomic layer deposition over the carbon based patterned mask by providing a plurality of cycles, wherein each of the cycles of the plurality of cycles, comprises providing a silicon precursor deposition phase, comprising flowing an atomic layer deposition precursor gas into the etch chamber, where the atomic layer deposition precursor gas is deposited while plasmaless and stopping the flow of the atomic layer deposition precursor gas and providing an oxygen deposition phase, comprising flowing ozone gas into the etch chamber, wherein the ozone gas binds with the deposited precursor gas while plasmaless and stopping the flow of ozone gas into the etch chamber. Part of the silicon oxide layer is etched. The stack is removed from the etch chamber.

Abstract: A method for patterning a stack having a patterned organic mask with a plurality of mask features including sidewalls and tops, a hardmask and an etch layer, wherein the patterned organic mask is positioned over the hardmask which is positioned over the etch layer is provided. An atomic layer deposition is deposited, wherein the depositing the atomic layer deposition controllably trims the plurality of mask features of the patterned organic mask. The atomic layer deposition is broken through. The hardmask is selectively etched with respect to the patterned organic mask, wherein the atomic layer deposition reduces faceting of the plurality of mask features of the patterned organic mask during the selective etching.

Abstract: A gas plenum arrangement for a substrate processing system includes a gas plenum body arranged to define a gas plenum between a coil and a processing chamber. The coil is arranged outside of an outer edge of the gas plenum body. A plurality of flux attenuating portions is arranged outside of the outer edge of the gas plenum body. The flux attenuation portions overlap the coil.

Abstract: A method for in-situ patterning a stack having a patterned mask with mask features including sidewalls and tops is provided. A plurality of patterning cycles is provided in a plasma chamber wherein each patterning cycle comprises: at least one (1) cycle of depositing an atomic layer deposition (ALD) over the mask features to create an ALD layer, wherein the ALD layer includes sidewalls over the sidewalls of the mask features and top portions over the tops of the mask features, and selectively etching the top portions of the ALD layer with respect to the sidewalls of the ALD layer.