Patents by Inventor Tom Lassister

Tom Lassister has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • In-situ barc and nitride etch process
    Patent number: 5972796
    Abstract: A method for etching a semiconductor device (10) having BARC layer (22) and nitride layer (20) includes etching BARC layer (22) until reaching a first set point in the fabrication reaction chamber and then etching nitride layer (20) in-situ the fabrication reaction chamber immediately following etching BARC layer (22).
    Type: Grant
    Filed: December 10, 1997
    Date of Patent: October 26, 1999
    Assignee: Texas Instruments Incorporated
    Inventors: Ming Yang, Masahiro Kaida, Tom Lassister, Fred D. Fishburn