Abstract: A method of controlling bandwidth and peaking over gain in a variable gain amplifier (VGA) device and structure therefor. The device includes at least three differential transistor pairs configured as a cross-coupled differential amplifier with differential input nodes, differential bias nodes, differential output nodes, a current source node, and two cross-coupling nodes. The cross-coupled differential amplifier includes a load resistor coupled to each of the differential output nodes and one of the cross-coupling nodes, and a load inductor coupled to the each of the cross-coupling nodes and a power supply rail. A current source is electrically coupled to the current source node. The cross-coupling configuration with the load resistance and inductance results in a lower bandwidth and lowered peaking at low gain compared to high gain. Further, the tap point into the inductor can be chosen as another variable to “tune” the bandwidth and peaking in a communication system.

Abstract: A method of controlling bandwidth and peaking over gain in a variable gain amplifier (VGA) device and structure therefor. The device includes at least three differential transistor pairs configured as a cross-coupled differential amplifier with differential input nodes, differential bias nodes, differential output nodes, a current source node, and two cross-coupling nodes. The cross-coupled differential amplifier includes a load resistor coupled to each of the differential output nodes and one of the cross-coupling nodes, and a load inductor coupled to the each of the cross-coupling nodes and a power supply rail. A current source is electrically coupled to the current source node. The cross-coupling configuration with the load resistance and inductance results in a lower bandwidth and lowered peaking at low gain compared to high gain. Further, the tap point into the inductor can be chosen as another variable to “tune” the bandwidth and peaking in a communication system.

Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

Abstract: A method of controlling bandwidth and peaking over gain in a variable gain amplifier (VGA) device and structure therefor. The device includes at least three differential transistor pairs configured as a cross-coupled differential amplifier with differential input nodes, differential bias nodes, differential output nodes, a current source node, and two cross-coupling nodes. The cross-coupled differential amplifier includes a load resistor coupled to each of the differential output nodes and one of the cross-coupling nodes, and a load inductor coupled to the each of the cross-coupling nodes and a power supply rail. A current source is electrically coupled to the current source node. The cross-coupling configuration with the load resistance and inductance results in a lower bandwidth and lowered peaking at low gain compared to high gain. Further, the tap point into the inductor can be chosen as another variable to “tune” the bandwidth and peaking in a communication system.

Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

Abstract: The present invention is directed to data communication system and methods. More specifically, various embodiments of the present invention provide a communication interface that is configured to transfer data at high bandwidth using PAM format(s) over optical communication networks. In various embodiments, amplitude and phase of the optical wave are modulated. There are other embodiments as well.

Abstract: A transimpedance amplifier (TIA) device and method of operation therefor. The TIA device can include a semiconductor substrate, a TIA with an input and output configured on the semiconductor substrate, and an overload buffer module coupled to the input terminal of the TIA. The overload buffer module can include a variable current source having an input and an output, and a biased buffer diode coupled to the output of the variable current source and to a ground node. The method of operation can include replicating, by the overload buffer module, the current-voltage (I/V) characteristics of the DC input signal at the output of the overload buffer module, wherein the overload buffer module reduces a total harmonic distortion (THD) of a DC output signal from the output of the TIA.

Abstract: The present invention is directed to data communication system and methods. More specifically, various embodiments of the present invention provide a communication interface that is configured to transfer data at high bandwidth using PAM format(s) over optical communication networks. In various embodiments, amplitude and phase of the optical wave are modulated. There are other embodiments as well.

Abstract: The present invention is directed to data communication system and methods. More specifically, various embodiments of the present invention provide a communication interface that is configured to transfer data at high bandwidth using PAM format(s) over optical communication networks. In various embodiments, amplitude and phase of the optical wave are modulated. There are other embodiments as well.

Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

Abstract: The present invention is directed to data communication system and methods. More specifically, various embodiments of the present invention provide a communication interface that is configured to transfer data at high bandwidth using PAM format(s) over optical communication networks. In various embodiments, amplitude and phase of the optical wave are modulated. There are other embodiments as well.

Abstract: The present invention is directed to data communication system and methods. More specifically, various embodiments of the present invention provide a communication interface that is configured to transfer data at high bandwidth using PAM format(s) over optical communication networks. In various embodiments, amplitude and phase of the optical wave are modulated. There are other embodiments as well.

Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

Abstract: The present invention is directed to data communication system and methods. More specifically, various embodiments of the present invention provide a communication interface that is configured to transfer data at high bandwidth using PAM format(s) over optical communication networks. In various embodiments, amplitude and phase of the optical wave are modulated. There are other embodiments as well.

Abstract: A transimpedance amplifier (TIA) device. The device includes a photodiode coupled to a differential TIA with a first and second TIA, which is followed by a Level Shifting/Differential Amplifier (LS/DA). The photodiode is coupled between a first and a second input terminal of the first and second TIAs, respectively. The LS/DA can be coupled to a first and second output terminal of the first and second TIAs, respectively. The TIA device includes a semiconductor substrate comprising a plurality of CMOS cells, which can be configured using 28 nm process technology to the first and second TIAs. Each of the CMOS cells can include a deep n-type well region. The second TIA can be configured using a plurality CMOS cells such that the second input terminal is operable at any positive voltage level with respect to an applied voltage to a deep n-well for each of the plurality of second CMOS cells.

Abstract: The present invention is directed to data communication system and methods. More specifically, various embodiments of the present invention provide a communication interface that is configured to transfer data at high bandwidth using PAM format(s) over optical communication networks. In various embodiments, amplitude and phase of the optical wave are modulated. There are other embodiments as well.

Abstract: Method and system for reducing bit error rate (BER) in a high-speed four-to-one time domain multiplexer are disclosed. In one embodiment of the present invention, a keep-alive current is employed in the latches of a four-to-one multiplexer in order to minimize the BER. By adjusting the keep-alive current of the latches in the datapath of the multiplexer, the latch performance can be optimized, thereby achieving minimum BER. Moreover, better latch performance can immunize the multiplexer against small timing misalignment.