Patents by Inventor Tom Reinecke

Tom Reinecke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of field-tunable silicon carbide defect qubits with optically transparent electrodes and silicon oxide surface passivation
    Patent number: 10262871
    Abstract: A method includes depositing a layer of silicon oxide onto a layer of silicon carbide; ion implanting the layer of silicon carbide, annealing the ion implanted layer of silicon carbide to produce defects within the layer of silicon carbide, performing photolithography using a mask layer on regions of the layer of silicon carbide to define regions for electrode deposition, removing the layer of silicon oxide from the layer of silicon carbide in the one or more regions for electrode deposition, forming one or more electrodes by depositing indium tin oxide (ITO) in each of the regions for electrode deposition, performing a first lift-off operation to remove the mask layer surrounding the electrodes, depositing a passivation and gate silicon oxide layer on top of the layer of silicon carbide and the electrodes, and performing a second lift-off operation to fabricate an optically transparent ITO gate between the electrodes.
    Type: Grant
    Filed: January 31, 2018
    Date of Patent: April 16, 2019
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Osama Nayfeh, Anna Leese De Escobar, Brad Liu, Patrick Sims, Sam Carter, David Kurt Gaskill, Tom Reinecke