Abstract: In some embodiments, an integrated tool for opening an etch stop layer and performing metallization comprises a first chamber with a remote plasma source, a direct plasma source, and a thermal source configured to open the etch stop layer on a substrate, a second chamber of the integrated tool with dry etch processing configured to pre-clean surfaces exposed by opening the etch stop layer, a third chamber of the integrated tool configured to deposit a barrier layer on the substrate, a fourth chamber of the integrated tool configured to deposit a liner layer on the substrate, and at least one fifth chamber of the integrated tool configured to deposit metallization material on the substrate. The integrated tool may also include a vacuum transfer chamber.

Abstract: Methods open etch stop layers in an integrated environment along with metallization processes. In some embodiments, a method for opening an etch stop layer (ESL) prior to metallization may include etching the ESL with an anisotropic process using direct plasma to form helium ions that are configured to roughen the ESL for a first duration of approximately 10 seconds to approximately 30 seconds, forming aluminum fluoride on the ESL using remote plasma and nitrogen trifluoride gas for a second duration of approximately 10 seconds to approximately 30 seconds, and exposing the ESL to a gas mixture of boron trichloride, trimethylaluminum, and/or dimethylaluminum chloride at a temperature of approximately 100 degrees Celsius to approximately 350 degrees Celsius to remove aluminum fluoride from the ESL and a portion of a material of the ESL for a third duration of approximately 30 seconds to approximately 60 seconds.