Abstract: Systems and methods for pre-aligning samples for more efficient processing of multiple samples with a BIB system according to the present invention comprises affixing a sample to an adjustable portion of a sample holder, nesting the sample holder with a first mask having a first mask edge, wherein the first mask is positioned outside of a BIB system, and aligning the sample such that it has a desired geometric relationship to the first mask edge. The first mask may be geometrically similar with a second mask within the BIB system that has a second mask edge such that the geometric relationship between the first mask edge and the sample when the sample holder is nested with the first mask is the same as the geometric relationship between the second mask edge and the sample when the sample holder is nested with the second mask.

Abstract: Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

Abstract: Methods and apparatus determine offcut angle of a crystalline sample using electron channeling patterns (ECPs), wherein backscattered electron intensity exhibits angular variation dependent on crystal orientation. A zone axis normal to a given crystal plane follows a circle as the sample is azimuthally rotated. On an ECP image presented with tilt angles as axes, the radius of the circle is the offcut angle of the sample. Large offcut angles are determined by a tilt technique that brings the zone axis into the ECP field of view. ECPs are produced with a scanning electron beam and a monolithic backscattered electron detector; or alternatively with a stationary electron beam and a pixelated electron backscatter diffraction detector. Applications include strain engineering, process monitoring, detecting spatial variations, and incoming wafer inspection. Methods are 40× faster than X-ray diffraction. 0.01-0.1° accuracy enables semiconductor applications.

Abstract: Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.

Abstract: Methods include providing a multi-pillar sample including at least a first pillar and a second pillar parallel with the first pillar, directing a charged particle beam to the first pillar, imaging the first pillar at a plurality of rotational positions by rotating the multi-pillar sample about a first pillar axis of the first pillar, directing the charged particle beam to the second pillar, and imaging the second pillar at a plurality of rotational positions by rotating the multi-pillar sample about a second pillar axis of the second pillar. Related apparatus for performing disclosed methods are disclosed. Multi-pillar samples are also disclosed.

Abstract: Methods include providing a multi-pillar sample including at least a first pillar and a second pillar parallel with the first pillar, directing a charged particle beam to the first pillar, imaging the first pillar at a plurality of rotational positions by rotating the multi-pillar sample about a first pillar axis of the first pillar, directing the charged particle beam to the second pillar, and imaging the second pillar at a plurality of rotational positions by rotating the multi-pillar sample about a second pillar axis of the second pillar. Related apparatus for performing disclosed methods are disclosed. Multi-pillar samples are also disclosed.

Abstract: Apparatuses and processes for generating data for three-dimensional reconstruction are disclosed herein. An example method at least includes exposing a subsequent surface of a sample, acquiring an image of the subsequent surface, comparing the image of the subsequent surface to an image of a reference surface, based on the comparison exceeding a threshold, acquiring a compositional or crystalline map of the subsequent surface, and based on the comparison not exceeding the threshold, exposing a next surface.

Abstract: Methods for locating and characterizing defects can include performing a first scan of a substrate to produce a first defect map including a first set of coordinates of one or more defects of the substrate and performing a second scan of one or more regions of the substrate associated with the defects based on the first defect map to produce one or more electron channeling contrast (ECC) images of the defects. Characterization of the defects can be based on the ECC images alone or in combination with other techniques. Such methods can include determining a second set of coordinates associated with the one or more defects based on the ECC images and directing an ion beam toward the substrate and milling the substrate based on the second set of coordinates.

Abstract: The invention relates to a method of, and apparatus for, examining a sample using a charged particle beam apparatus. The method as defined herein comprises the step of detecting, using a first detector, emissions of a first type from the sample in response to the charged particle beam illuminating the sample. The method further comprises the step of acquiring spectral information on emissions of a second type from the sample in response to the charged particle beam illuminating the sample. As defined herein, said step of acquiring spectral information comprises the steps of providing a spectral information prediction algorithm and using said algorithm for predicting said spectral information based on detected emissions of the first type as an input parameter of said algorithm. With this it is possible to gather EDS data using only a BSE detector.

Abstract: Methods and systems for conducting tomographic imaging microscopy of a sample with a high energy charged particle beam include irradiating a first region of the sample in a first angular position with a high energy charged particle beam and detecting emissions resultant from the charged particle beam irradiating the first region. The sample is repositioned into a second angular position such that the second region to be different than the first region, and a second region of the sample is irradiated. Example repositioning may include one or more of a translation of the sample, a helical rotation of the sample, the sample being positioned in a non-eucentric position, or a combination thereof. Emissions resultant from irradiation of the second region are then detected, and a 3D model of a portion of the sample is generated based at least in part on the detected first emissions and detected second emissions.

Abstract: Dynamic band contrast image (DBCI) is constructed with scattering patterns acquired at multiple scanning locations of a sample using a charged particle beam. Each pixel of the DBCI is generated by integrating the corresponding scattering pattern along a diffraction band. The DBCI includes charged particle channeling condition and can be used for detecting sample defects.

Abstract: The invention relates to a method of determining the thickness of a sample. According to this method, a diffraction pattern image of a sample of a first material is obtained. Said diffraction pattern image comprises at least image values representative for the diffraction pattern obtained for said sample. A slope of said image values is then determined. The slope is compared to a relation between the thickness of said first material and the slope of image value of a corresponding diffraction pattern image of said first material. The determined slope and said relation are used to determine the thickness of said sample.

Abstract: The invention relates to a method of determining the thickness of a sample. According to this method, a diffraction pattern image of a sample of a first material is obtained. Said diffraction pattern image comprises at least image values representative for the diffraction pattern obtained for said sample. A slope of said image values is then determined. The slope is compared to a relation between the thickness of said first material and the slope of image value of a corresponding diffraction pattern image of said first material. The determined slope and said relation are used to determine the thickness of said sample.

Abstract: A method of preparing a specimen in a dual-beam charged particle microscope having: an ion beam column, that can produce an ion beam that propagates along an ion axis; an electron beam column, that can produce an electron beam that propagates along an electron axis, comprising the following steps: Providing a precursor sample on a sample holder; Using said ion beam to cut a furrow around a selected portion of said sample; Attaching a manipulator needle to said portion, severing said portion from the rest of said sample, and using the needle to perform a lift-out of the portion away from the rest of the sample, particularly comprising: Configuring the manipulator needle to have multiple degrees of motional freedom, comprising at least: Eucentric tilt ? about a tilt axis that passes through an intersection point of said ion and electron axes and is perpendicular to said electron axis; Rotation ? about a longitudinal axis of the needle; Whilst maintaining said portion on said needle, using said ion bea

Abstract: Techniques for training an artificial neural network (ANN) using simulated specimen images are described. Simulated specimen images are generated based on data models. The data models describe characteristics of a crystalline material and characteristics of one or more defect types. The data models do not include any image data. Simulated specimen images are input as training data into a training algorithm to generate an artificial neural network (ANN) for identifying defects in crystalline materials. After the ANN is trained, the ANN analyzes captured specimen images to identify defects shown therein.

Abstract: A substrate is alignable for ion beam milling or other inspection or processing by obtaining an electron channeling pattern (ECP) or other electron beam backscatter pattern from the substrate based on electron beam backscatter from the substrate. The ECP is a function of substrate crystal orientation and tilt angles associated with ECP pattern values at or near a maximum, minimum, or midpoint are used to determine substrate tilt. Such tilt is then compensated or eliminated using a tilt stage coupled the substrate, or by adjusting an ion beam axis. In typical examples, circuit substrate “chunks” are aligned for ion beam milling to reveal circuit features for evaluation of circuit processing.

Abstract: A method of preparing a specimen in a dual-beam charged particle microscope having: an ion beam column, that can produce an ion beam that propagates along an ion axis; an electron beam column, that can produce an electron beam that propagates along an electron axis, comprising the following steps: Providing a precursor sample on a sample holder; Using said ion beam to cut a furrow around a selected portion of said sample; Attaching a manipulator needle to said portion, severing said portion from the rest of said sample, and using the needle to perform a lift-out of the portion away from the rest of the sample, particularly comprising: Configuring the manipulator needle to have multiple degrees of motional freedom, comprising at least: Eucentric tilt a about a tilt axis that passes through an intersection point of said ion and electron axes and is perpendicular to said electron axis; Rotation ? about a longitudinal axis of the needle; Whilst maintaining said portion on said needle, using said ion beam

Abstract: A method of modifying a sample surface layer in the vacuum chamber of a particle-optical apparatus, the method performed in vacuum, the method comprising: Providing the microscopic sample attached to a manipulator, Providing a first liquid at a first (controlled) temperature, Dipping the sample in the first liquid, thereby causing a sample surface modification, Removing the sample from the first liquid, Providing a second liquid at a second (controlled) temperature, Dipping the sample in the second liquid, and Removing the sample from the second liquid. This enables the wet processing of a sample in-situ, thereby enhancing speed and/or avoiding subsequent alteration/contamination of the sample, such as oxidation, etc. The method is particularly useful for etching a lamella after machining the lamella with a (gallium) FIB to remove the surface layer where gallium implantation occurred, or where the crystal lattice is disturbed.

Abstract: Surface modification of a cryogenic specimen can be obtained using a charged particle microscope. A specimen is situated in a vacuum chamber on a specimen holder and maintained at a cryogenic temperature. The vacuum chamber is evacuated and a charged-particle beam is directed to a portion of the specimen so as to modify a surface thereof. A thin film monitor is situated in the vacuum chamber and has at least a detection surface maintained at a cryogenic temperature. A precipitation rate of frozen condensate in the vacuum chamber is measured using the thin film monitor, and based on the measured precipitation rate, the surface modification is initiated when the precipitation rate is less than a first pre-defined threshold, or interrupted if the precipitation rate rises above a second pre-defined threshold.

Abstract: A method of investigating a specimen using X-ray tomography, comprising (a) mounting the specimen to a specimen holder, (b) irradiating the specimen with a beam of X-rays along a first line of sight through the specimen, and (c) detecting a flux of X-rays transmitted through the specimen and forming a first image. Then (d) repeating the steps (b) and (c) for a series of different lines of sight through the specimen, thereby producing a corresponding series of images.