Abstract: The system comprises an array of addressable light sources, which is configured for an activation of the light sources individually or in groups, an image sensor comprising pixels, which are configured for the detection of a predefined light pattern, and a rolling shutter of the image sensor. The array of addressable light sources is configured for a consecutive activation of the light sources according to the predefined light pattern or part of the predefined light pattern, and the rolling shutter is configured to expose areas of the image sensor in accordance with the activation of the light sources, so that the pixels in an exposed area are illuminated and the pixels that are outside the exposed area are shielded from illumination.

Abstract: A method of measuring signals related to a photodiode based sensor and calculating a corrected data value thereof is disclosed. A nominal reset voltage value of the photodiode may be measured. A knee point voltage may be applied to the photodiode and resets a voltage on the photodiode to the knee point voltage when the voltage on the photodiode falls below the knee point voltage. Applying the knee point voltage may extend the dynamic range of the sensor. An output voltage of the photodiode at end of an integration time of the photodiode may be measured. The knee point voltage may be applied again after the end of the integration time. A voltage value of the photodiode of the knee point voltage may be measured. The nominal reset voltage value, the output voltage of a sensor and the knee point voltage may be reported to calculate the corrected data value.

Abstract: In accordance with an embodiment, a pixel includes a first stage coupled to a second stage. The second stage includes a sampling capacitor and a subtraction capacitor.

Abstract: A method of measuring signals related to a photodiode based sensor and calculating a corrected data value thereof is disclosed. A nominal reset voltage value of the photodiode may be measured. A knee point voltage may be applied to the photodiode and resets a voltage on the photodiode to the knee point voltage when the voltage on the photodiode falls below the knee point voltage. Applying the knee point voltage may extend the dynamic range of the sensor. An output voltage of the photodiode at end of an integration time of the photodiode may be measured. The knee point voltage may be applied again after the end of the integration time. A voltage value of the photodiode of the knee point voltage may be measured. The nominal reset voltage value, the output voltage of a sensor and the knee point voltage may be reported to calculate the corrected data value.

Abstract: A method of measuring signals related to a photodiode based sensor and calculating a corrected data value thereof is disclosed. A nominal reset voltage value of the photodiode may be measured. A knee point voltage may be applied to the photodiode and resets a voltage on the photodiode to the knee point voltage when the voltage on the photodiode falls below the knee point voltage. Applying the knee point voltage may extend the dynamic range of the sensor. An output voltage of the photodiode at end of an integration time of the photodiode may be measured. The knee point voltage may be applied again after the end of the integration time. A voltage value of the photodiode of the knee point voltage may be measured. The nominal reset voltage value, the output voltage of a sensor and the knee point voltage may be reported to calculate the corrected data value.

Abstract: An active pixel including a precharge circuit for a sample and hold (S/H) stage and methods of operating the same are provided. In addition to the precharge circuit and S/H stage, the pixel may include a sensor circuit to generate a signal in response to electromagnetic radiation received on a photodetector included therein, and a multiplexer circuit. The S/H stage may include a switching-element to couple the signal from the sensor circuit to a capacitor element in the S/H stage to read-out and store the signal. The multiplexer circuit may include a switching-element coupled to an output node of the capacitor element to couple the signal to a column. The precharge circuit may include a switching-element coupled between the output node of the capacitor element and the column to precharge the capacitor element to a fixed voltage applied to the column when the S/H stage is not reading-out the signal.

Abstract: In accordance with an embodiment, a pixel includes a first stage coupled to a second stage. The second stage includes a sampling capacitor and a subtraction capacitor.

Abstract: A method of measuring signals related to a photodiode based sensor and calculating a corrected data value thereof is disclosed. A nominal reset voltage value of the photodiode may be measured. A knee point voltage may be applied to the photodiode and resets a voltage on the photodiode to the knee point voltage when the voltage on the photodiode falls below the knee point voltage. Applying the knee point voltage may extend the dynamic range of the sensor. An output voltage of the photodiode at end of an integration time of the photodiode may be measured. The knee point voltage may be applied again after the end of the integration time. A voltage value of the photodiode of the knee point voltage may be measured. The nominal reset voltage value, the output voltage of a sensor and the knee point voltage may be reported to calculate the corrected data value.

Abstract: A correlated double sampling (CDS) pixel and methods of operating the same are provided. The CDS pixel includes a sensor circuit to generate a voltage value corresponding to electromagnetic radiation received on a photodetector included therein, and a sample and hold (S/H) stage including a sample switching-element and first and second capacitor-elements. The first capacitor-element is coupled between an output of the sensor circuit through the sample switching-element and a predetermined reference potential. The second capacitor-element has a first node coupled to the output of the sensor circuit through the sample switching-element and a second node coupled in series with an output of the S/H stage, the second node of the second capacitor-element further coupled through a calibration switching-element to a calibration voltage to sample a reset voltage value on the photodetector at a first time at a beginning of an integration period following reset of the sensor circuit.

Abstract: A method of measuring signals related to a photodiode based sensor and calculating a corrected data value thereof is disclosed. A nominal reset voltage value of the photodiode may be measured. A knee point voltage may be applied to the photodiode and resets a voltage on the photodiode to the knee point voltage when the voltage on the photodiode falls below the knee point voltage. Applying the knee point voltage may extend the dynamic range of the sensor. An output voltage of the photodiode at end of an integration time of the photodiode may be measured. The knee point voltage may be applied again after the end of the integration time. A voltage value of the photodiode of the knee point voltage may be measured. The nominal reset voltage value, the output voltage of a sensor and the knee point voltage may be reported to calculate the corrected data value.

Abstract: An in-pixel correlated double sampling (CDS) pixel and methods of operating the same are provided. The CDS pixel includes a photodetector to accumulate radiation induced charges, a floating diffusion element electrically coupled to an output of the photodetector through a transfer switch, and. a capacitor-element having an input node electrically coupled to an amplifier and through the amplifier to the floating diffusion element and an output node electrically coupled to an output of the pixel. The capacitor-element is configured to sample a reset value of the floating diffusion element during a reset sampling and to sample a signal value of the floating diffusion element during a signal sampling.

Abstract: A correlated double sampling (CDS) pixel and methods of operating the same are provided. The CDS pixel includes a sensor circuit to generate a voltage value corresponding to electromagnetic radiation received on a photodetector included therein, and a sample and hold (S/H) stage including a sample switching-element and first and second capacitor-elements. The first capacitor-element is coupled between an output of the sensor circuit through the sample switching-element and a predetermined reference potential. The second capacitor-element has a first node coupled to the output of the sensor circuit through the sample switching-element and a second node coupled in series with an output of the S/H stage, the second node of the second capacitor-element further coupled through a calibration switching-element to a calibration voltage to sample a reset voltage value on the photodetector at a first time at a beginning of an integration period following reset of the sensor circuit.

Abstract: An active pixel including a precharge circuit for a sample and hold (S/H) stage and methods of operating the same are provided. In addition to the precharge circuit and S/H stage, the pixel may include a sensor circuit to generate a signal in response to electromagnetic radiation received on a photodetector included therein, and a multiplexer circuit. The S/H stage may include a switching-element to couple the signal from the sensor circuit to a capacitor element in the S/H stage to read-out and store the signal. The multiplexer circuit may include a switching-element coupled to an output node of the capacitor element to couple the signal to a column. The precharge circuit may include a switching-element coupled between the output node of the capacitor element and the column to precharge the capacitor element to a fixed voltage applied to the column when the S/H stage is not reading-out the signal.

Abstract: In one embodiment, an image sensor for an x-ray imager includes a photodiode and a readout circuit. A deep well formed below the readout circuit may be configured as a diode to drain away parasitic electrons, which would otherwise induce noise in images. The parasitic electrons may be drained away to a power supply or a measuring circuit for dosimetrie purposes, for example.

Abstract: An image sensor device (100) is described comprising a semiconductor substrate (1), a MOS-based pixel structure and a planarization layer (30) on top. The planarization layer (30) is provided to avoid lensing due to the roughness of the pixel structure surface. The planarization layer (30) may be further optimized by adapting its thickness and refractive index to obtain anti-reflective coating properties for some regions in the image sensor device. This allows increasing the quantum efficiency and the spectral response of the image sensor device significantly.