Patents by Inventor Toma Fujita

Toma Fujita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230417613
    Abstract: A pressure sensor includes: a substrate having first and second main surfaces and having a thickness in first direction; a first chamber recessed from the first main surface in the first direction with respect to the substrate; a second chamber recessed from the first main surface in the first direction with respect to the substrate and adjacent to the first chamber in second direction; a fluid passage recessed from the first main surface in the first direction with respect to the substrate and causing the first chamber to be in fluid communication with an outside; a closing layer laminated on the first main surface of the substrate and closing openings of the first chamber and the second chamber; and a membrane partitioned by the first and second chambers in the second direction and extending in a plane parallel to the first direction and a third direction.
    Type: Application
    Filed: June 20, 2023
    Publication date: December 28, 2023
    Applicant: ROHM CO., LTD.
    Inventors: Martin Wilfried HELLER, Toma FUJITA
  • Publication number: 20230257258
    Abstract: A semiconductor device includes a sensor structure body, a gas conduit that extends from a surface of the sensor structure body toward a hollow space in the sensor structure body to introduce a gas into the hollow space from outside, a pressure sensor that is formed inside the sensor structure body and has a membrane which is able to vibrate by actions of the gas, an acceleration sensor that is formed inside the sensor structure body to detect an acceleration that has acted on the sensor structure body, and a sealing resin that covers the sensor structure body, in which the gas conduit includes an inner end portion on the hollow space side and an outer end portion on the end surface side of the sensor structure body, and the outer end portion of the gas conduit is opened on an end surface of the sealing resin.
    Type: Application
    Filed: February 6, 2023
    Publication date: August 17, 2023
    Applicant: ROHM CO., LTD.
    Inventors: Martin Wilfried HELLER, Toma FUJITA
  • Patent number: 11724933
    Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: August 15, 2023
    Assignee: ROHM Co., Ltd.
    Inventors: Martin Heller, Toma Fujita
  • Publication number: 20230166967
    Abstract: A MEMS sensor includes: a first substrate having a cavity partially exposed on the surface of the first substrate; an electrode of a sensor element provided on the first substrate and arranged in the cavity; a support portion provided on the first substrate and configured to support the electrode; an element isolation portion formed on the first substrate so as to cover the support portion and configured to electrically isolate the electrode and the support portion from each other; an epitaxial growth layer formed on the electrode and the element isolation portion of the first substrate; and a second substrate bonded to the first substrate and configured to cover the sensor element, wherein the epitaxial growth layer has a monocrystalline portion arranged on the electrode and a polycrystalline portion arranged on the element isolation portion.
    Type: Application
    Filed: November 22, 2022
    Publication date: June 1, 2023
    Applicant: ROHM CO., LTD.
    Inventors: Daisuke KAMINISHI, Martin Wilfried HELLER, Toma FUJITA
  • Publication number: 20230166964
    Abstract: A MEMS sensor includes: a conductive device-side substrate including cavity in thickness direction thereof; a MEMS electrode arranged in the cavity; a support extending in first direction toward the MEMS electrode from peripheral wall of the cavity and connected to and support the MEMS electrode; and an isolator traversing the support in second direction in plan view to isolate the support into a first support on the side of the MEMS electrode and a second support on the side of the device-side substrate to be electrically insulated from each other in the first direction, wherein the isolator includes: a trench recessed in the thickness direction with respect to the device-side substrate; insulating layers formed on inner wall surfaces of the trench; and joining layers formed on the insulating layers and including portions facing each other and at least partially joined to each other in the first direction.
    Type: Application
    Filed: November 17, 2022
    Publication date: June 1, 2023
    Applicant: ROHM CO., LTD.
    Inventors: Nobuhisa YAMASHITA, Toma FUJITA, Martin Wilfried HELLER
  • Patent number: 10793427
    Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
    Type: Grant
    Filed: August 15, 2017
    Date of Patent: October 6, 2020
    Assignee: KIONIX, INC.
    Inventors: Martin Heller, Toma Fujita
  • Patent number: 10766767
    Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: September 8, 2020
    Assignee: KIONIX, INC.
    Inventors: Martin Heller, Toma Fujita
  • Publication number: 20200048078
    Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
    Type: Application
    Filed: October 16, 2019
    Publication date: February 13, 2020
    Inventors: Martin Heller, Toma Fujita
  • Publication number: 20190263656
    Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
    Type: Application
    Filed: May 8, 2019
    Publication date: August 29, 2019
    Inventors: Martin Heller, Toma Fujita
  • Publication number: 20180282153
    Abstract: A MEMS device formed in a first semiconductor substrate is sealed using a second semiconductor substrate. To achieve this, an Aluminum Germanium structure is formed above the first substrate, and a polysilicon layer is formed above the second substrate. The first substrate is covered with the second substrate so as to cause the polysilicon layer to contact the Aluminum Germanium structure. Thereafter, eutectic bonding is performed between the first and second substrates so as to cause the Aluminum Germanium structure to melt and form an AlGeSi sealant thereby to seal the MEMS device. Optionally, the Germanium Aluminum structure includes, in part, a layer of Germanium overlaying a layer of Aluminum.
    Type: Application
    Filed: August 15, 2017
    Publication date: October 4, 2018
    Inventors: Martin Heller, Toma Fujita
  • Patent number: 9341529
    Abstract: A pressure sensor 1 comprises a semiconductor substrate 10, insulating layers 21, 22, 23 formed on the semiconductor substrate 10, a semiconductor layer 30 formed on the semiconductor substrate 10 with the insulating layers 21, 23 intervening therebetween, and a cavity portion 13 provided between the semiconductor substrate 10 and the semiconductor layer 30. The portion of the semiconductor layer 30 which overlaps the cavity portion 13 as viewed in a lamination direction serves as a movable portion 31. The cavity portion 13 is surrounded by the insulating layers 22, 23. With this arrangement, the pressure sensor 1 can be manufactured easily with high precision.
    Type: Grant
    Filed: November 4, 2010
    Date of Patent: May 17, 2016
    Assignee: ROHM CO., LTD
    Inventors: Haruhiko Nishikage, Toma Fujita
  • Patent number: 8975090
    Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.
    Type: Grant
    Filed: July 14, 2014
    Date of Patent: March 10, 2015
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Toma Fujita
  • Publication number: 20140322854
    Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.
    Type: Application
    Filed: July 14, 2014
    Publication date: October 30, 2014
    Applicant: ROHM CO., LTD.
    Inventors: Goro NAKATANI, Toma FUJITA
  • Patent number: 8829630
    Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.
    Type: Grant
    Filed: May 25, 2011
    Date of Patent: September 9, 2014
    Assignee: Rohm Co., Ltd.
    Inventors: Masahiro Sakuragi, Toma Fujita, Mizuho Okada
  • Patent number: 8829629
    Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.
    Type: Grant
    Filed: July 26, 2013
    Date of Patent: September 9, 2014
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Toma Fujita
  • Publication number: 20130313660
    Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.
    Type: Application
    Filed: July 26, 2013
    Publication date: November 28, 2013
    Applicant: ROHM CO., LTD.
    Inventors: Goro NAKATANI, Toma FUJITA
  • Patent number: 8513746
    Abstract: A capacitance type gyro sensor includes a semiconductor substrate, a first electrode integrally including a first base portion and first comb tooth portions and a second electrode integrally including a second base portion and second comb tooth portions, formed by processing the surface portion of the semiconductor substrate. The first electrode has first drive portions that extend from opposed portions opposed to the respective second comb tooth portions on the first base portion toward the respective second comb tooth portions. The second electrode has second drive portions formed on the tip end portions of the respective second comb tooth portions opposed to the respective first drive portions. The first drive portions and the second drive portions engage with each other at an interval like comb teeth.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: August 20, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Goro Nakatani, Toma Fujita
  • Patent number: 8426931
    Abstract: To provide a semiconductor device prevented from giving a limitation on the sensitivity of HEMS devices due to isolation regions thereof and a method of fabricating the same.
    Type: Grant
    Filed: October 19, 2010
    Date of Patent: April 23, 2013
    Assignee: Rohm Co., Ltd.
    Inventors: Toma Fujita, Hironobu Kawauchi, Haruhiko Nishikage
  • Publication number: 20130062713
    Abstract: [Subject] To provide a pressure sensor capable of implementing cost reduction and miniaturization. [Solving Means] A pressure sensor 1 includes a silicon substrate 2 provided therein with a reference pressure chamber 8, a diaphragm 10, consisting of part of the silicon substrate 2, formed on a surface layer portion of the silicon substrate 2 to partition a reference pressure chamber 8, and an etching stop layer 9 formed on a lower surface of the diaphragm 10 facing the reference pressure chamber 8. A through-hole 11 communicating with the reference pressure chamber 8 is formed on the diaphragm 10, and a filler 13 is arranged in the through-hole 11.
    Type: Application
    Filed: May 25, 2011
    Publication date: March 14, 2013
    Applicant: ROHM CO., LTD.
    Inventors: Masahiro Sakuragi, Toma Fujita, Mizuho Okada
  • Patent number: 8258673
    Abstract: There are disclosed a semiconductor device in which a short circuit between an oscillator and a semiconductor substrate is prevented, the semiconductor device being capable of suppressing an increase of fabrication steps, and a method of fabricating the semiconductor device. The semiconductor device includes: a semiconductor substrate, in which a recessed portion is formed on an upper surface, and a semiconductor layer is exposed to a bottom surface of the recessed portion; an oscillator that has a beam-type movable electrode arranged in the recessed portion, the movable electrode having insulating films arranged on side surfaces and lower surface thereof, and is fixed to the semiconductor substrate at a position apart from the movable electrode; and a beam-type fixed electrode that is arranged in the recessed portion so as to be opposed to the movable electrode, and is fixed to the semiconductor substrate so as to be electrically isolated from the movable electrode.
    Type: Grant
    Filed: June 17, 2010
    Date of Patent: September 4, 2012
    Assignee: Rohm Co., Ltd.
    Inventors: Toma Fujita, Haruhiko Nishikage, Hironobu Kawauchi