Patents by Inventor Tomas Diaz

Tomas Diaz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor material and method for enhancing solubility of a dopant therein
    Publication number: 20030032268
    Abstract: A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.
    Type: Application
    Filed: September 18, 2002
    Publication date: February 13, 2003
    Applicant: The Regents of the University of California
    Inventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz de la Rubia, Martin Giles, Maria-Jose Caturla, Vidvuds Ozolins, Mark Asta, Silva Theiss, Majeed Foad, Andrew Quong
  • Method for enhancing the solubility of boron and indium in silicon
    Patent number: 6498078
    Abstract: A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.
    Type: Grant
    Filed: September 4, 2001
    Date of Patent: December 24, 2002
    Assignee: The Regents of the University of California
    Inventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz de la Rubia, Martin Giles, Maria-Jose Caturla, Vidvuds Ozolins, Mark Asta, Silva Theiss, Majeed Foad, Andrew Quong
  • Method for enhancing the solubility of boron and indium in silicon
    Publication number: 20020055022
    Abstract: A method for enhancing the equilibrium solubility of boron and indium in silicon. The method involves first-principles quantum mechanical calculations to determine the temperature dependence of the equilibrium solubility of two important p-type dopants in silicon, namely boron and indium, under various strain conditions. The equilibrium thermodynamic solubility of size-mismatched impurities, such as boron and indium in silicon, can be raised significantly if the silicon substrate is strained appropriately. For example, for boron, a 1% compressive strain raises the equilibrium solubility by 100% at 1100° C.; and for indium, a 1% tensile strain at 1100° C., corresponds to an enhancement of the solubility by 200%.
    Type: Application
    Filed: September 4, 2001
    Publication date: May 9, 2002
    Applicant: The Regents of the University of California
    Inventors: Babak Sadigh, Thomas J. Lenosky, Tomas Diaz de La Rubia, Martin Giles, Maria-Jose Caturla, Vidvuds Ozolins, Mark Asta, Silva Theiss, Majeed Foad, Andrew Quong