Abstract: A vehicle detection system (1) comprising at least one detection unit (2). Each detection unit corresponds to a detection volume (Sn) and each detection unit comprises at least two spaced-apart magnetic field sensors including first and second magnetic field sensors (6a, 6b; FIG. 3). Each magnetic field sensor is configured to provide a series of instantaneous magnetic field measurements spaced apart in time. A processing unit (3) is configured to receive the time series of instantaneous magnetic field measurements. The processing unit is configured to store the time series of instantaneous magnetic field measurements in a table (8; FIG. 5). The processing unit is configured to determine the presence of a vehicle (7) in each detection volume in dependence upon the magnetic field measurements in the table.

Abstract: A device comprising a channel for charge carriers comprising non-ferromagnetic semiconducting in which charge carriers exhibit spin-orbit coupling, a region of semiconducting material of opposite conductivity type to the channel and configured so as to form a junction with the channel for injecting spin-polarized charge carriers into an end of the channel and at least one lead connected to the channel for measuring a transverse voltage across the channel.

Abstract: A memory device is described. The memory device comprises an antiferromagnet. The device may comprise an insulator and an electrode arranged in a tunnel junction configuration. Alternatively, the device may comprise first and second contacts to the antiferromagnet for measuring ohmic resistance of the antiferromagnet. The antiferromagnet is not coupled to any ferromagnet. The state of the antiferromagnet can be set by heating the junction to a temperature at or above a critical temperature at which is possible to re-orientate magnetic moments in the antiferromagnet, applying an external magnetic field and then cooling the antiferromagnet to a temperature below the critical temperature.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.

Abstract: A single-electron transistor (1) has an elongate conductive channel (2) and a side gate (3) formed in a 5 nm-thick layer (4) of Ga0.98Mn0.02As. The single-electron transistor (1) is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.

Abstract: A device comprising a channel for charge carriers comprising non-ferromagnetic semiconducting in which charge carriers exhibit spin-orbit coupling, a region of semiconducting material of opposite conductivity type to the channel and configured so as to form a junction with the channel for injecting spin-polarised charge carriers into an end of the channel and at least one lead connected to the channel for measuring a transverse voltage across the channel.

Abstract: A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.

Abstract: A method of operating a magnetoresistive device is described. The device comprises a ferromagnetic region configured to exhibit magnetic anisotropy and to allow magnetisation thereof to be switched between at least first and second orientations and a gate capacitively coupled to the ferromagnetic region. The method comprises applying an electric field pulse to the ferromagnetic region so as to cause orientation of magnetic anisotropy to change for switching magnetisation between the first and second orientations.

Abstract: A single-electron transistor (1) has an elongate conductive channel (2) and a side gate (3) formed in a 5 nm-thick layer (4) of Ga0.98Mn0.02As. The single-electron transistor (1) is operable, in a first mode, as a transistor and, in a second mode, as non-volatile memory.