Patents by Inventor Tomas Manzaneque Garcia
Tomas Manzaneque Garcia has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11942920Abstract: A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be X-cut LiNbO3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal.Type: GrantFiled: October 16, 2020Date of Patent: March 26, 2024Assignee: The Board of Trustees of the University of IllinoisInventors: Ruochen Lu, Tomas Manzaneque Garcia, Yansong Yang, Songbin Gong
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Patent number: 11695382Abstract: A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.Type: GrantFiled: July 16, 2020Date of Patent: July 4, 2023Assignee: The Board of Trustees of the University of IllinoisInventors: Songbin Gong, Ruochen Lu, Tomas Manzaneque Garcia, Cheng Tu, Daniel Shoemaker, Chengxi Zhao
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Patent number: 11621689Abstract: A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be Z-cut LiNbO3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal, and the gap determines a time delay of the acoustic wave.Type: GrantFiled: October 16, 2020Date of Patent: April 4, 2023Assignee: The Board of Trustees of the University of llllinoisInventors: Ruochen Lu, Tomas Manzaneque Garcia, Yansong Yang, Songbin Gong
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Patent number: 11451209Abstract: A piezoelectric thin-film suspended above a carrier substrate. An input interdigital transducer (IDT) having first interdigitated electrodes is disposed at different locations along the horizontal axis and on the first side of the piezoelectric thin-film. Each opposing pair of the first interdigitated electrodes is to selectively transduce a particular frequency range of an input electrical signal that varies in frequency over time into an acoustic wave of a laterally vibrating mode based on a pitch between electrodes of the opposing pair. An output IDT that includes second interdigitated electrodes is disposed at different locations along the horizontal axis and on the second side of the piezoelectric thin-film. Each opposing pair of the second interdigitated electrodes is to convert the acoustic wave transduced by the respective opposing pair of the first interdigitated electrodes into a compressed pulse.Type: GrantFiled: October 30, 2018Date of Patent: September 20, 2022Assignee: THE BOARD OF TRUSTEES OF THE UNIVERSITY OF ILLINOISInventors: Songbin Gong, Ruochen Lu, Tomas Manzaneque Garcia
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Publication number: 20210119602Abstract: A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF can be an aluminum nitride thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented at least partially in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF and converts a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal, and the gap determines a time delay of the acoustic wave.Type: ApplicationFiled: October 16, 2020Publication date: April 22, 2021Inventors: Ruochen Lu, Tomas Manzaneque Garcia, Yansong Yang, Songbin Gong
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Publication number: 20210119606Abstract: A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be X-cut LiNbO3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal.Type: ApplicationFiled: October 16, 2020Publication date: April 22, 2021Inventors: Ruochen Lu, Tomas Manzaneque Garcia, Yansong Yang, Songbin Gong
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Publication number: 20210119601Abstract: A piezoelectric thin film (PTF) is located above a carrier substrate. The PTF may be Z-cut LiNbO3 thin film adapted to propagate an acoustic wave in at least one of a first mode excited by an electric field oriented in a longitudinal direction along a length of the PTF or a second mode excited by the electric field oriented at least partially in a thickness direction of the PTF. A first interdigitated transducer (IDT) is disposed on a first end of the PTF. The first IDT is to convert a first electromagnetic signal, traveling in the longitudinal direction, into the acoustic wave. A second IDT is disposed on a second end of the PTF with a gap between the second IDT and the first IDT. The second IDT is to convert the acoustic wave into a second electromagnetic signal, and the gap determines a time delay of the acoustic wave.Type: ApplicationFiled: October 16, 2020Publication date: April 22, 2021Inventors: Ruochen Lu, Tomas Manzaneque Garcia, Yansong Yang, Songbin Gong
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Publication number: 20200350884Abstract: A method includes depositing a first metal layer on a semiconductor substrate; etching the first metal layer to form a first electrode having a first lead; depositing a piezoelectric layer on the semiconductor substrate and first electrode; etching the piezoelectric layer to a shape of the gyrator to be formed within the circulator; depositing a second metal layer on the piezoelectric layer; etching the second metal layer to form a second electrode having a second lead, the second electrode being positioned opposite the first electrode, wherein the first lead and the second lead form an electrical port; depositing a magnetostrictive layer on the second electrode; etching the magnetostrictive layer to approximately the shape of the piezoelectric layer; depositing a third metal layer on the magnetostrictive layer; and etching the third metal layer to form a metal coil that has a gap on one side to define a magnetic port.Type: ApplicationFiled: July 16, 2020Publication date: November 5, 2020Inventors: Songbin Gong, Ruochen Lu, Tomas Manzaneque Garcia, Cheng Tu, Daniel Shoemaker, Chengxi Zhao
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Patent number: 10727804Abstract: An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.Type: GrantFiled: October 23, 2017Date of Patent: July 28, 2020Assignee: Board of Trustees of the University of IllinoisInventors: Songbin Gong, Ruochen Lu, Tomas Manzaneque Garcia, Cheng Tu, Daniel Shoemaker, Chengxi Zhao
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Publication number: 20190131953Abstract: A piezoelectric thin-film suspended above a carrier substrate. An input interdigital transducer (IDT) having first interdigitated electrodes is disposed at different locations along the horizontal axis and on the first side of the piezoelectric thin-film. Each opposing pair of the first interdigitated electrodes is to selectively transduce a particular frequency range of an input electrical signal that varies in frequency over time into an acoustic wave of a laterally vibrating mode based on a pitch between electrodes of the opposing pair. An output IDT that includes second interdigitated electrodes is disposed at different locations along the horizontal axis and on the second side of the piezoelectric thin-film. Each opposing pair of the second interdigitated electrodes is to convert the acoustic wave transduced by the respective opposing pair of the first interdigitated electrodes into a compressed pulse.Type: ApplicationFiled: October 30, 2018Publication date: May 2, 2019Inventors: Songbin Gong, Ruochen Lu, Tomas Manzaneque Garcia
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Publication number: 20180115294Abstract: An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.Type: ApplicationFiled: October 23, 2017Publication date: April 26, 2018Inventors: Songbin Gong, Rouchen Lu, Tomas Manzaneque Garcia, Cheng Tu, Daniel Shoemaker, Chengxi Zhao