Abstract: A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.

Abstract: The present invention concerns an anti-tearing protection system (1) for a non-volatile memory (3) comprising a first memory block (5) and a second memory block (7), the first and second memory blocks (5, 7) being arranged to store a data set comprising user data and an error detection code obtained based on the user data. The first and second memory blocks (5, 7) can be read in a first read mode for determining logic states of data elements comprised in the data set according to the first read mode. The user data in a respective memory block are considered to be correct according to the first read mode if its error detection code equals a first given value. The first and second memory blocks (5, 7) can further be read in a second read mode for determining the logic states of the data elements comprised in data set according to the second read mode.

Abstract: A process to form a HEMT can have a gate electrode layer that initially has a plurality of spaced-apart doped regions. In an embodiment, any of the spaced-apart doped regions can be formed by depositing or implanting p-type dopant atoms. After patterning, the gate electrode can include an n-type doped region over the p-type doped region. In another embodiment a barrier layer can underlie the gate electrode and include a lower film with a higher Al content and thinner than an upper film. In a further embodiment, a silicon nitride layer can be formed over the gate electrode layer and can help to provide Si atoms for the n-type doped region and increase a Mg:H ratio within the gate electrode. The HEMT can have good turn-on characteristics, low gate leakage when in the on-state, and better time-dependent breakdown as compared to a conventional HEMT.

Abstract: A method of authenticating a transponder in communication with a server. The method includes the steps of defining a word in the transponder with a previous state of a counter of the transponder, incremented by a random number generated in the transponder, calculating a one-time password in the transponder with the aid of an HOTP algorithm and of a secret key on the basis of the word, transmitting the word and the one-time password to the server, calculating another one-time password in the server with the word received from the transponder by the HOTP algorithm and with one and the same secret key, and checking whether the passwords are identical so as to authenticate the transponder and authorize access to a site determined by the server.

Abstract: The present invention concerns an anti-tearing protection system (1) for a non-volatile memory (3) comprising a first memory block (5) and a second memory block (7), the first and second memory blocks (5, 7) being arranged to store a data set comprising user data and an error detection code obtained based on the user data. The first and second memory blocks (5, 7) can be read in a first read mode for determining logic states of data elements comprised in the data set according to the first read mode. The user data in a respective memory block are considered to be correct according to the first read mode if its error detection code equals a first given value. The first and second memory blocks (5, 7) can further be read in a second read mode for determining the logic states of the data elements comprised in data set according to the second read mode.

Abstract: A method of authenticating a transponder in communication with a server. The method includes the steps of defining a word in the transponder with a previous state of a counter of the transponder, incremented by a random number generated in the transponder, calculating a one-time password in the transponder with the aid of an HOTP algorithm and of a secret key on the basis of the word, transmitting the word and the one-time password to the server, calculating another one-time password in the server with the word received from the transponder by the HOTP algorithm and with one and the same secret key, and checking whether the passwords are identical so as to authenticate the transponder and authorize access to a site determined by the server.