Abstract: This invention relates to the stabilization of a laser source used in opto-electronics, specifically a source comprising a semiconductor laser diode. Such laser sources are often used as so-called pump lasers for fiber amplifiers in the field of optical communication, erbium-doped fiber amplifiers being a prominent example. Such lasers are usually designed to provide a narrow-bandwidth optical radiation with a stable power output in a given frequency band. The present invention now concerns such a laser source using external reflector means, preferably consisting of one or more appropriately designed fiber Bragg gratings, providing very high relative feedback with an extremely narrow bandwidth, combined with a very long external cavity encompassing about 100 modes or more and an extremely low front facet reflectivity of the laser diode. Also, the FWHM bandwidth of the external reflector is selected to be significantly smaller than the distance between the modes within the laser diode.

Abstract: This invention relates to the stabilization of a laser source used in optoelectronics, specifically a source comprising a semiconductor laser diode (1). Such laser sources are often used as so-called pump lasers for fiber amplifiers in the field of optical communication, erbium-doped fiber amplifiers being a prominent example. Such lasers are usually designed to provide a narrow bandwidth optical radiation with a stable power output in a given frequency band. The present invention now concerns such a laser source using external reflector means, preferably consisting of one or more appropriately designed fiber Bragg gratings (9), providing very high relative feedback with an extremely narrow bandwidth, combined with a very long external cavity encompassing about 100 modes or more and an extremely low front facet (2) reflectivity of the laser diode. This stabilizes the laser source extremely well in its operation, without the need for an active temperature stabilizing element.

Abstract: The invention relates to the stabilization of high power semiconductor laser diode sources as they are extensively used in the field of optical communication. Such lasers are mostly employed as so-called pump laser sources for fiber amplifiers, e.g. erbium-doped fiber amplifiers, and are designed to provide a narrow-bandwidth optical radiation with a stable power output in a given frequency band. To improve the wavelength locking range of such laser sources when operating without an active temperature stabilizing element, an external reflector providing very high relative feedback is used. The reflectivity bandwidth of the external reflector is broadened for improving the stability of the laser source. In commonly employed optical fibers for conducting the laser beam, the external reflector is formed by one or a plurality of appropriately designed fiber Bragg gratings.

Abstract: The invention relates to the stabilization of high power semiconductor laser diode sources as they are extensively used in the field of optical communication. Such lasers are mostly employed as so-called pump laser sources for fiber amplifiers, e.g. erbium-doped fiber amplifiers, and are designed to provide a narrow-bandwidth optical radiation with a stable power output in a given frequency band. To improve the wavelength locking range of such laser sources when operating without an active temperature stabilizing element, an external reflector providing very high relative feedback is used. The reflectivity bandwidth of the external reflector is broadened for improving the stability of the laser source. In commonly employed optical fibers for conducting the laser beam, the external reflector is formed by one or a plurality of appropriately designed fiber Bragg gratings.

Abstract: The process for the manufacture of the rib waveguide (4) is based on the process steps (a) ion implantation of high-energy light ions into a crystal, (b) the application of a mask to the surface (11.1) of this crystal, which defines strips, and (c), the etching of a rib (41) onto the surface (11.1) of this crystal. The process step (a) (ion implantation) causes the formation of a layer (14) with a reduced refraction index at a depth of some micrometers below the surface of the crystal (11.1). By this refraction index barrier (14), the light in the direction vertical to the surface of the crystal is restricted. The lateral guidance of the light is effected by the lateral limits (43.1) and (43.2) of the rib (41). The process is in particular suitable for the manufacture of waveguides in non-linear optical crystals, e.g., ferro-electric oxides (KNbO3, LiNbO3, etc.) and borates (LBO, BBO, etc.).