Abstract: A method of fabrication in a vacuum chamber. The method comprises: deploying the wafer within the vacuum chamber; applying a mask in a first position over the wafer in the vacuum chamber; following this, performing a first fabrication step comprising projecting material onto the wafer through the mask while in vacuum in the vacuum chamber; then operating a mask-handling mechanism deployed within the vacuum chamber in order to reposition the mask to a second position while remaining in vacuum in the vacuum chamber, wherein the repositioning comprises receiving readings from one or more sensors sensing a current position of the mask and based thereon aligning the current position of the mask to the second position; and following this repositioning, performing a second fabrication step comprising projecting material onto the wafer through patterned openings in the repositioned mask while still maintaining the vacuum in the vacuum chamber.

Abstract: A method for collimating a beam of material being deposited on a substrate at a deposition area of the substrate is disclosed. The substrate is masked with a stencil mask located at a mask distance from the substrate, the mask distance being the distance between a top face of the substrate and an outer face of the mask facing the substrate. The beam is projected from a source cell located at a source distance from the mask, the source distance being the distance between the source cell and an outer face of the mask facing the source cell. The stencil mask comprises two mask layers separated by a layer separation distance which is great than zero. Each mask layer comprises a slit, the slits of the two layers having a width being aligned in a plane of the substrate.

Abstract: A method of fabrication in a vacuum chamber. The method comprises: deploying the wafer within the vacuum chamber; applying a mask in a first position over the wafer in the vacuum chamber; following this, performing a first fabrication step comprising projecting material onto the wafer through the mask while in vacuum in the vacuum chamber; then operating a mask-handling mechanism deployed within the vacuum chamber in order to reposition the mask to a second position while remaining in vacuum in the vacuum chamber, wherein the repositioning comprises receiving readings from one or more sensors sensing a current position of the mask and based thereon aligning the current position of the mask to the second position; and following this repositioning, performing a second fabrication step comprising projecting material onto the wafer through patterned openings in the repositioned mask while still maintaining the vacuum in the vacuum chamber.