Abstract: High quality epitaxial layers of piezoelectric monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the piezoelectric monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying piezoelectric monocrystalline material layer.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: A semiconductor structure for implementing optical beam switching includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is operable to transmit radiant energy is formed within the monocrystalline compound semiconductor layer. A diffraction grating including an electrochromic portion is optically coupled to the optical source component.

Abstract: The invention relates, in general, to electrical connector assemblies, and more particularly to plastic electrical connectors that employ metal plated plastic contacts. According to an aspect of the invention, an electrical connector is provided comprising a plastic shell having an open cavity that defines an internal surface, and an electrical connector contact that comprises a metal coated area of the internal surface.

Abstract: A flexible circuit board and a method for making a flexible circuit board. The flexible circuit board (10) is formed from a substantially rigid material and includes a first portion (12) and a second portion (14) coupled by a bend region (16). The bend region (16) includes at least one bend (40, 52) having a radius less than 120 mils.

Abstract: The invention relates, in general, to electrical connector assemblies, and more particularly to plastic electrical connectors that employ metal plated plastic contacts. According to an aspect of the invention, an electrical connector (12) is provided having a plastic shell (14) with an open cavity (30) that defines an internal surface (18), and an electrical connector contact (16) that includes a metal coated area (19) of the internal surface (18).

Abstract: A flexible circuit board assembly (10) includes a flexible substrate (11) having first and second end portions (14,15) and an intermediate portion (16). Conductive metalization interconnect paths (17) extend between the substrate end portions (14, 15) and across the intermediate portion (16). The substrate first and second end portions are mounted to first and second end portions (21, 22) of a rigidizer plate (20). Stiffening material (35) is provided on the flexible substrate intermediate portion (16) to define stiff (36, 37, 38) and less stiff (39, 40) paths that extend across the interconnect paths (17) and the substrate intermediate portion (16) and define desired bend curvature characteristics for the flexible substrate intermediate portion (16). A method utilizes this structure to provide a flexible circuit board assembly (10), preferably with a bent rigidizer plate (20).

Abstract: Semiconductor carrier assemblies (10, 40) use a flexible substrate (11) to connect to at least one semiconductor device (19). Preferably the flexible substrate (11) also connects to a circuit component, preferably a circuit board (31). The flexible substrate (11) is configured in a U-shaped configuration having at least one rigidizer plate (25; 41, 42) positioned in the notch of the U. Interconnections between the semiconductor device (19) and the flexible substrate (11), and, preferably, the circuit component (31) are provided by solder connections (22, 28). Preferably, two rigidizer plates (41,42) having different temperature coefficients of expansion are positioned in the notch of the U of the flexible substrate (11) and preferably a low modulus adhesive layer (50, 51, 47) is utilized in the assembly to minimize thermal stress.