Abstract: According to embodiments, a semiconductor laser comprises a semiconductor layer stack, which comprises an active zone for generating radiation. The semiconductor laser also comprises a first resonator mirror, a second resonator mirror, and an optical resonator, which is arranged between the first and second resonator mirrors and extends in a direction parallel to a main surface of the semiconductor layer stack. A reflectance R1 of the first resonator mirror is wavelength-dependent, so that R1 or a product R of R1 and the reflectance R2 of the second resonator mirror in a wavelength range decreases from a target wavelength ?0 of the laser to ?0+?? from a value R0, wherein ?? is selected as a function of a temperature-dependent shift in an emission wavelength.

Abstract: A laser diode chip is described, comprising: an n-type semiconductor region (3), a p-type semiconductor region (5), and an active layer (4) arranged between the n-type semiconductor region (3) and the p-type semiconductor region (5), an n-type contact (9) and a p-type contact (8), at least one heating element (14) arranged on a side of the laser diode chip facing the p-type semiconductor region (5), the heating element (14) functioning as a resistance heater, and at least one metallic seed layer (7, 11), wherein the heating element comprises a part (11) of the seed layer, and wherein the p-type contact (8) is arranged on a further part (7) of the seed layer (7, 11).

Abstract: A semiconductor laser including an active zone and a waveguide, wherein the active zone includes an active layer configured to generate electromagnetic radiation during operation of the semiconductor laser, the waveguide is configured to guide the electromagnetic radiation generated during operation of the semiconductor laser within the semiconductor laser, the waveguide includes a subregion formed from a compound semiconductor material, wherein a proportion of a material of the compound semiconductor material gradually increases in the entire subregion along the vertical direction toward the active zone so that a refractive index of the subregion gradually decreases toward the active zone, and the proportion is an aluminum proportion or a phosphorus proportion.

Abstract: A semiconductor laser including an active zone and a waveguide, wherein the active zone includes an active layer configured to generate electromagnetic radiation during operation of the semiconductor laser, the waveguide is configured to guide the electromagnetic radiation generated during operation of the semiconductor laser within the semiconductor laser, the waveguide includes a subregion formed from a compound semiconductor material, wherein a proportion of a material of the compound semiconductor material gradually increases in the entire subregion along the vertical direction toward the active zone so that a refractive index of the subregion gradually decreases toward the active zone, and the proportion is an aluminum proportion or a phosphorus proportion.

Abstract: In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).

Abstract: In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

Abstract: A method of producing a semiconductor laser element includes A) providing at least one carrier assemblage having a multiplicity of carriers for the semiconductor laser elements, C) providing at least one laser bar having a multiplicity of semiconductor laser diodes which include a common growth substrate and a semiconductor layer sequence grown thereon, D) fitting the laser bar on a top side of the carrier assemblage, and E) singulating to form the semiconductor laser elements after D).