Patents by Inventor Tomeo Yamamoto

Tomeo Yamamoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having a thin film capacitor and method for fabricating the same
    Publication number: 20020190294
    Abstract: In a thin film transistor, each of an upper electrode and a lower electrode is formed of at least one material selected from the group consisting of a metal and a metal nitride, represented by TiN, Ti, W, WN, Pt, Ir, Ru. A capacitor dielectric film is formed of at least one material selected from the group consisting of ZrO2, HfO2, (Zrx, Hf1−x)O2 (0<x<1), (Zry, Ti1−y)O2 (0<y<1), (Hfz, Ti1−z)O2 (0<z<1), (Zrk, Til, Hfm)O2 (0<k, l, m<1, k+l+m=1), by an atomic layer deposition process. The thin film transistor thus formed has a minimized leakage current and an increased capacitance.
    Type: Application
    Filed: June 13, 2002
    Publication date: December 19, 2002
    Inventors: Toshihiro Iizuka, Tomeo Yamamoto, Mami Toda, Shintaro Yamamichi